FDB150N10 Equivalent & Substitute Parts

Part Overview

The FDB150N10 is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with 57A continuous drain current at 25°C. This device operates in the PowerTrench® series and is housed in a TO-263 (D2PAK) surface mount package. The part is Active in product status and RoHS3 compliant.

Substitute parts are necessary when the primary device is unavailable, when alternative manufacturers are preferred for supply chain diversification, or when application requirements allow for devices with equivalent or enhanced electrical characteristics within the same package family.

Key Parameters

Parameter	FDB150N10 Value	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	57	A
Rds On (Max) @ Id, Vgs	15 mOhm @ 49A, 10V	mOhm
Gate Charge (Qg) @ Vgs	69 nC @ 10V	nC
Power Dissipation (Max)	110	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-263-3 (D2PAK)	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the FDB150N10 is determined by the following critical parameters:

Mandatory Matching Criteria:

Drain to Source Voltage (Vdss): 100V minimum
Package Type: TO-263-3 (D2PAK) surface mount
FET Type: N-Channel MOSFET
Technology: Metal Oxide (MOSFET)
Mounting: Surface Mount
Compliance: RoHS3 compliant, REACH unaffected

Performance Parameters (Allowable Variation):

Continuous Drain Current (Id): 57A or higher
Rds On (Max): 15 mOhm or lower (lower is acceptable)
Gate Charge (Qg): 69 nC or lower (lower is acceptable)
Power Dissipation: 110W or higher
Operating Temperature: -55°C to 150°C minimum (higher maximum temperature is acceptable)

Substitute parts may exceed the FDB150N10 specifications in drain current, power dissipation, and maximum operating temperature. Parts with lower Rds On and gate charge values represent improved performance characteristics. Parts with Vdss ratings above 100V are acceptable for 100V applications.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Qg @ 10V (nC)	Power Diss. (W)	Tj Max (°C)	Package
FDB150N10	onsemi	100	57	15	69	110	150	TO-263-3
IPB123N10N3GATMA1	Infineon	100	58	12.3	35	94	175	TO-263-3
IPB144N12N3GATMA1	Infineon	120	56	14.4	49	107	175	TO-263-3
IRFS4510TRLPBF	Infineon	100	61	13.9	87	140	175	TO-263-3
PHB27NQ10T,118	Nexperia	100	28	50	30	107	175	TO-263-3
PHB45NQ10T,118	Nexperia	100	47	25	61	150	175	TO-263-3
PSMN013-100BS,118	Nexperia	100	68	13.9	59	170	175	TO-263-3
PSMN015-100B,118	Nexperia	100	75	15	90	300	175	TO-263-3
PSMN016-100BS,118	Nexperia	100	57	16	49	148	175	TO-263-3
STB80NF10T4	STMicroelectronics	100	80	15	182	300	175	TO-263-3

Engineering Selection Recommendations

All listed substitute parts are Active in product status and RoHS3 compliant with REACH unaffected designation, matching the compliance profile of the FDB150N10.

Direct Electrical Equivalents (100V, 57A Class):

PSMN016-100BS,118 (Nexperia): Matches FDB150N10 drain current specification at 57A with identical Vdss and comparable Rds On. Operating temperature extends to 175°C. Suitable for direct replacement in applications where the 150°C maximum junction temperature of the FDB150N10 is not a limiting factor.

Enhanced Performance Substitutes (100V, Higher Current):

IPB123N10N3GATMA1 (Infineon): Provides 58A drain current with superior Rds On of 12.3 mOhm and significantly lower gate charge of 35 nC. Extended operating temperature to 175°C. Represents improved efficiency characteristics.
PSMN013-100BS,118 (Nexperia): Rated for 68A continuous drain current with 13.9 mOhm Rds On and 59 nC gate charge. Power dissipation rated at 170W. Provides current margin above FDB150N10 specification.
STB80NF10T4 (STMicroelectronics): Highest current rating at 80A with 15 mOhm Rds On and 300W power dissipation. Gate charge of 182 nC is elevated. Suitable for applications requiring maximum current headroom.

Higher Voltage Rated Substitute:

IPB144N12N3GATMA1 (Infineon): Rated for 120V Vdss with 56A drain current. Acceptable for 100V applications with voltage margin. Rds On of 14.4 mOhm and gate charge of 49 nC provide balanced performance.

Lower Current Alternatives (Current Derating):

PHB45NQ10T,118 (Nexperia): 47A continuous drain current with 25 mOhm Rds On. Suitable only for applications where 47A current is sufficient.
PHB27NQ10T,118 (Nexperia): 28A continuous drain current. Not recommended for applications requiring the full 57A specification of FDB150N10.

Frequently Asked Questions (FAQ)

Q: Can I use a substitute part with higher Vdss rating than 100V in a 100V application?

A: Yes. A device rated for 120V (such as IPB144N12N3GATMA1) operates safely in a 100V application. The higher voltage rating provides additional margin and does not compromise functionality at lower voltages.

Q: What is the significance of Rds On in selecting a substitute?

A: Rds On (on-state resistance) directly affects power dissipation and heat generation. Lower Rds On values reduce losses. Substitutes with Rds On equal to or lower than the FDB150N10 specification of 15 mOhm are acceptable and represent equal or improved performance.

Q: Are all substitute parts pin-compatible with FDB150N10?

A: Yes. All listed substitutes use the TO-263-3 (D2PAK) package with identical pin configuration: two leads plus tab. Physical and electrical pin compatibility is maintained across all substitutes.

Q: Why do some substitutes have higher gate charge values?

A: Gate charge (Qg) affects switching speed and driver requirements. Higher gate charge values (such as STB80NF10T4 at 182 nC) require more charge from the gate driver but do not prevent substitution. The gate driver must supply sufficient current to meet switching frequency requirements.

Q: Can I use PSMN015-100B,118 as a substitute despite its higher Rds On of 15 mOhm?

A: PSMN015-100B,118 has Rds On of 15 mOhm, which matches the FDB150N10 specification. However, it is rated for 75A continuous drain current, significantly exceeding the 57A requirement. This part is acceptable but represents over-specification for current rating.

Q: What is the impact of operating temperature range differences?

A: The FDB150N10 operates to 150°C maximum junction temperature, while most substitutes extend to 175°C. Applications operating near the 150°C limit should verify that substitute parts maintain required performance at the actual operating temperature. Extended temperature range in substitutes does not restrict their use in lower-temperature applications.

Q: Is the IPB123N10N3GATMA1 a direct replacement for FDB150N10?

A: IPB123N10N3GATMA1 is functionally equivalent with 58A drain current (versus 57A), superior Rds On of 12.3 mOhm (versus 15 mOhm), and lower gate charge of 35 nC (versus 69 nC). It represents improved performance in the same package and is suitable for direct substitution.

Q: Why would I choose STB80NF10T4 over other substitutes?

A: STB80NF10T4 provides the highest continuous drain current rating at 80A with 300W power dissipation capability. Selection is appropriate for applications requiring maximum current capacity or where future design margin is necessary. The elevated gate charge of 182 nC requires verification of gate driver capability.

Q: Are all substitutes available in the same packaging options as FDB150N10?

A: All substitutes are available in TO-263-3 (D2PAK) surface mount package. Packaging options (Cut Tape, Digi-Reel, or Tape & Reel) vary by part number and supplier. Verify packaging availability with the component distributor for your procurement requirements.

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