FDB14N30TM Equivalent & Substitute Parts

Part Overview

The FDB14N30TM is an N-Channel MOSFET manufactured by onsemi, rated for 300V drain-to-source voltage and 14A continuous drain current in a Surface Mount TO-263 (D2PAK) package. This device is classified as Obsolete, indicating it is no longer in active production. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing manufacturing requirements for applications utilizing this component.

Substiute Parts

FDB14N30TM
onsemiIn Stock: 5110FDB14N30TM Datasheet
FDB14N30TM
Current Part
FCB260N65S3
onsemiIn Stock: 3703FCB260N65S3 Datasheet
FCB260N65S3
MFR Recommended
IRF540NSTRLPBF
Infineon TechnologiesIn Stock: 35365IRF540NSTRLPBF Datasheet
IRF540NSTRLPBF
Similar

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 300 V
Continuous Drain Current (Id) @ 25°C 14 A
On-State Resistance (Rds On Max) @ 7A, 10V 290 mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA 5 V
Gate Charge (Qg Max) @ 10V 25 nC
Power Dissipation (Max) 140 W
Operating Temperature Range -55 to 150 °C
Package Type TO-263 (D2PAK)
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution of the FDB14N30TM is determined by compatibility across the following critical parameters: drain-to-source voltage rating (Vdss), continuous drain current capability (Id), on-state resistance (Rds On), package type (TO-263/D2PAK), and mounting configuration (Surface Mount). Substitute parts must maintain electrical performance within the application's voltage and current requirements while preserving the same physical footprint and thermal characteristics.

The substitute parts identified fall into two categories based on voltage rating alignment:

Category 1: Higher Voltage Rating (650V) The FCB260N65S3 operates at 650V Vdss, exceeding the FDB14N30TM's 300V rating. This part is suitable for applications requiring higher voltage headroom while maintaining comparable current handling and package compatibility.

Category 2: Lower Voltage Rating (100V) The IRF540NSTRLPBF operates at 100V Vdss, below the FDB14N30TM's 300V rating. This part is suitable only for applications with reduced voltage requirements but offers significantly higher current capability (33A vs. 14A) and lower on-state resistance (44mOhm vs. 290mOhm).

Parameter Comparison

Parameter FDB14N30TM FCB260N65S3 IRF540NSTRLPBF Unit
Manufacturer onsemi onsemi Infineon Technologies
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 650 100 V
Continuous Drain Current (Id) @ 25°C 14 12 33 A
Rds On (Max) @ Vgs 10V 290 @ 7A 260 @ 6A 44 @ 16A mOhm
Gate Threshold Voltage (Vgs(th) Max) 5 @ 250µA 4.5 @ 1.2mA 4 @ 250µA V
Gate Charge (Qg Max) @ 10V 25 24 71 nC
Power Dissipation (Max) 140 90 130 W
Operating Temperature Range -55 to 150 -55 to 150 -55 to 175 °C
Package Type TO-263 (D2PAK) TO-263 (D2PAK) TO-263 (D2PAK)
Mounting Type Surface Mount Surface Mount Surface Mount
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected
Product Status Obsolete Not For New Designs Active

Engineering Selection Recommendations

FCB260N65S3 (onsemi SuperFET® III)

The FCB260N65S3 is classified as "Not For New Designs," indicating limited future availability. However, it maintains the same manufacturer lineage (onsemi) and package footprint as the FDB14N30TM. This part is suitable for direct replacement in applications where the 300V voltage rating is insufficient and 650V headroom is required. The FCB260N65S3 exhibits comparable gate charge (24 nC vs. 25 nC) and similar on-state resistance characteristics, ensuring minimal circuit redesign. All regulatory compliance certifications (ROHS3, REACH Unaffected) align with the original part.

IRF540NSTRLPBF (Infineon HEXFET®)

The IRF540NSTRLPBF is classified as Active, providing long-term supply chain availability and suitability for new designs. This part operates at 100V Vdss, which is below the FDB14N30TM's 300V rating and therefore applicable only to applications with reduced voltage requirements. The IRF540NSTRLPBF offers superior current handling (33A vs. 14A) and significantly lower on-state resistance (44 mOhm vs. 290 mOhm), resulting in reduced power dissipation in high-current applications. The higher gate charge (71 nC vs. 25 nC) requires consideration in gate drive circuit design. All regulatory compliance certifications align with the original part. The extended operating temperature range (-55°C to 175°C vs. -55°C to 150°C) provides additional thermal margin.

Frequently Asked Questions (FAQ)

Q: Can the FCB260N65S3 be used as a direct replacement for the FDB14N30TM?

A: The FCB260N65S3 shares the same TO-263 (D2PAK) package and Surface Mount configuration as the FDB14N30TM. However, the FCB260N65S3 is rated for 650V Vdss compared to the FDB14N30TM's 300V. Direct replacement is possible only if the application circuit can accommodate the higher voltage rating. The FCB260N65S3 exhibits slightly lower on-state resistance (260 mOhm vs. 290 mOhm) and comparable gate charge, minimizing circuit modifications.

Q: Is the IRF540NSTRLPBF compatible with the FDB14N30TM footprint?

A: Yes, the IRF540NSTRLPBF uses the same TO-263 (D2PAK) package and Surface Mount configuration. However, the IRF540NSTRLPBF is rated for only 100V Vdss, which is significantly lower than the FDB14N30TM's 300V rating. This part is suitable only for applications operating at 100V or below. The higher gate charge (71 nC) may require gate drive circuit adjustments.

Q: What are the key differences in on-state resistance between these parts?

A: The FDB14N30TM exhibits 290 mOhm on-state resistance at 7A and 10V gate voltage. The FCB260N65S3 shows 260 mOhm at 6A and 10V, representing a 10% improvement. The IRF540NSTRLPBF demonstrates 44 mOhm at 16A and 10V, representing an 85% reduction. Lower on-state resistance reduces conduction losses and heat generation in high-current applications.

Q: Are all three parts RoHS3 compliant?

A: Yes, the FDB14N30TM, FCB260N65S3, and IRF540NSTRLPBF are all ROHS3 Compliant and REACH Unaffected, meeting current environmental and regulatory requirements.

Q: What is the significance of the product status classifications?

A: The FDB14N30TM is classified as Obsolete, indicating discontinued production. The FCB260N65S3 is classified as "Not For New Designs," indicating limited future availability. The IRF540NSTRLPBF is classified as Active, indicating ongoing production and suitability for new designs. For long-term supply chain security, the IRF540NSTRLPBF is the preferred choice when voltage requirements permit.

Q: How do gate charge differences affect circuit design?

A: The FDB14N30TM and FCB260N65S3 exhibit comparable gate charge values (25 nC and 24 nC respectively), requiring similar gate drive circuit specifications. The IRF540NSTRLPBF exhibits higher gate charge (71 nC), requiring increased gate drive current or extended switching times. Gate drive circuit redesign may be necessary when substituting with the IRF540NSTRLPBF.

Q: Can these parts be used interchangeably in all applications?

A: No. Substitution depends on the application's voltage and current requirements. The FCB260N65S3 is suitable for applications requiring higher voltage headroom (650V). The IRF540NSTRLPBF is suitable only for applications operating at 100V or below. The FDB14N30TM's 300V rating falls between these two options. Circuit validation is required to confirm compatibility with the specific application's voltage and current operating points.

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