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FDB088N08 Equivalent & Substitute Parts
Part Overview
The FDB088N08 is an N-Channel MOSFET manufactured by onsemi, rated for 75V drain-to-source voltage and 120A continuous drain current at 25°C. This device operates in the PowerTrench® series and is housed in a Surface Mount TO-263 (D2PAK) package. The part is Active in product status and RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).
Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to component availability, supply chain considerations, or design flexibility within specified parameter ranges.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 75 | V |
| Continuous Drain Current (Id) @ 25°C | 120 | A |
| Rds On (Max) @ Id, Vgs | 8.8 mOhm @ 75A, 10V | mOhm |
| Gate Charge (Qg) @ Vgs | 118 | nC @ 10V |
| Power Dissipation (Max) | 160 | W |
| Operating Temperature Range | -55 to 175 | °C |
| Package Type | TO-263 (D2PAK) | Surface Mount |
| Vgs (Max) | ±20 | V |
Substitute Part Grouping Explanation
Substitution eligibility is determined by the following criteria:
Primary Electrical Parameters:
- Drain-to-Source Voltage (Vdss): Substitute must equal or exceed 75V
- Continuous Drain Current (Id): Substitute must support minimum 75A at 25°C for direct replacement; higher ratings provide design margin
- On-State Resistance (Rds On): Substitute must not exceed 12 mOhm at rated conditions to maintain thermal performance
- Gate Charge (Qg): Substitute must not exceed 200 nC to ensure compatible gate drive requirements
- Power Dissipation: Substitute must support minimum 160W
Mechanical Parameters:
- Package: All substitutes must use TO-263 (D2PAK) Surface Mount configuration
- Mounting Type: Surface Mount only
- Lead Configuration: 2 Leads + Tab
Environmental & Compliance:
- Operating Temperature: -55°C to 175°C minimum
- RoHS Status: RoHS3 Compliant preferred
- Moisture Sensitivity: MSL 1 (Unlimited) preferred
Substitutes are grouped into three categories based on current rating alignment: Full-Capacity (≥100A), Mid-Range (75A–99A), and Limited-Capacity (<75A).
Parameter Comparison
| Part Number | Manufacturer | Vdss (V) | Id @ 25°C (A) | Rds On (mOhm) | Qg (nC) | Power Diss. (W) | Vgs Max (V) | Temp Range (°C) | Package |
|---|---|---|---|---|---|---|---|---|---|
| FDB088N08 | onsemi | 75 | 120 | 8.8 @ 75A, 10V | 118 @ 10V | 160 | ±20 | -55 to 175 | TO-263 (D2PAK) |
| PSMN005-75B,118 | Nexperia USA Inc. | 75 | 75 | 5.0 @ 25A, 10V | 165 @ 10V | 230 | ±20 | -55 to 175 | TO-263 (D2PAK) |
| PSMN008-75B,118 | Nexperia USA Inc. | 75 | 75 | 8.5 @ 25A, 10V | 122.8 @ 10V | 230 | ±20 | -55 to 175 | TO-263 (D2PAK) |
| PSMN012-80BS,118 | Nexperia USA Inc. | 80 | 74 | 11.0 @ 15A, 10V | 43 @ 10V | 148 | ±20 | -55 to 175 | TO-263 (D2PAK) |
| PSMN8R7-80BS,118 | Nexperia USA Inc. | 80 | 90 | 8.7 @ 10A, 10V | 52 @ 10V | 170 | ±20 | -55 to 175 | TO-263 (D2PAK) |
| STB75NF75T4 | STMicroelectronics | 75 | 80 | 11.0 @ 40A, 10V | 160 @ 10V | 300 | ±20 | -55 to 175 | TO-263 (D2PAK) |
| STB75NF75LT4 | STMicroelectronics | 75 | 75 | 11.0 @ 37.5A, 10V | 90 @ 5V | 300 | ±15 | -55 to 175 | TO-263 (D2PAK) |
| BUK9609-75A,118 | NXP USA Inc. | 75 | 75 | 8.5 @ 25A, 10V | Not specified | 230 | ±10 | -55 to 175 | D2PAK |
| IRF1018ESTRLPBF | Infineon Technologies | 60 | 79 | 8.4 @ 47A, 10V | 69 @ 10V | 110 | ±20 | -55 to 175 | TO-263 (D2PAK) |
| PHB29N08T,118 | NXP Semiconductors | 75 | 27 | 50.0 @ 14A, 11V | 19 @ 10V | 88 | ±30 | -55 to 175 | TO-263 (D2PAK) |
Engineering Selection Recommendations
Full-Capacity Substitutes (≥100A Continuous Drain Current):
No substitute parts in the provided list meet or exceed the 120A continuous drain current rating of the FDB088N08. The highest-rated substitute is PSMN8R7-80BS,118 at 90A, which represents a 25% reduction in current capacity.
Mid-Range Substitutes (75A–99A Continuous Drain Current):
The following parts are suitable for applications where 75A–90A continuous drain current is acceptable:
- PSMN005-75B,118 (Nexperia USA Inc.): 75V, 75A, 230W power dissipation, RoHS3 compliant, MSL 1. Rds On of 5.0 mOhm provides superior on-state performance.
- PSMN008-75B,118 (Nexperia USA Inc.): 75V, 75A, 230W power dissipation, RoHS3 compliant, MSL 1. Rds On of 8.5 mOhm closely matches FDB088N08 characteristics.
- STB75NF75T4 (STMicroelectronics): 75V, 80A, 300W power dissipation, RoHS3 compliant, MSL 1. Highest power dissipation rating in this group.
- STB75NF75LT4 (STMicroelectronics): 75V, 75A, 300W power dissipation, RoHS3 compliant, MSL 1.
- PSMN8R7-80BS,118 (Nexperia USA Inc.): 80V, 90A, 170W power dissipation, RoHS3 compliant, MSL 1. Provides voltage margin above 75V.
- BUK9609-75A,118 (NXP USA Inc.): 75V, 75A, 230W power dissipation, AEC-Q101 automotive qualified. Vgs Max of ±10V is more restrictive than FDB088N08.
Limited-Capacity Substitutes (<75A Continuous Drain Current):
- IRF1018ESTRLPBF (Infineon Technologies): 60V, 79A, 110W power dissipation, RoHS3 compliant, MSL 1. Vdss of 60V is below the 75V rating; use only in applications with maximum 60V system voltage.
- PHB29N08T,118 (NXP Semiconductors): 75V, 27A, 88W power dissipation, MSL 1. Significantly reduced current capacity; suitable only for low-current applications.
- PSMN012-80BS,118 (Nexperia USA Inc.): 80V, 74A, 148W power dissipation, RoHS3 compliant, MSL 1. Reduced power dissipation rating.
All substitute parts maintain Surface Mount TO-263 (D2PAK) package compatibility, operating temperature range of -55°C to 175°C, and RoHS3 compliance (except BUK9609-75A,118, which carries AEC-Q101 automotive qualification).
Frequently Asked Questions (FAQ)
Q: Can PSMN005-75B,118 directly replace FDB088N08 in all applications?
A: PSMN005-75B,118 is electrically compatible for applications requiring up to 75A continuous drain current. The FDB088N08 is rated for 120A; therefore, PSMN005-75B,118 is suitable only when the actual circuit current demand does not exceed 75A. Both parts share identical Vdss (75V), Vgs Max (±20V), operating temperature range, and package type.
Q: What is the significance of the Rds On difference between FDB088N08 (8.8 mOhm) and PSMN005-75B,118 (5.0 mOhm)?
A: Lower Rds On reduces conduction losses and heat generation. PSMN005-75B,118 dissipates less power during operation, which may improve thermal performance in current-limited applications. However, this advantage applies only within the 75A current range of PSMN005-75B,118.
Q: Is IRF1018ESTRLPBF a suitable substitute for FDB088N08?
A: IRF1018ESTRLPBF has a Vdss rating of 60V, which is below the 75V specification of FDB088N08. This part is suitable only for applications with maximum system voltage of 60V. It is not recommended as a direct substitute in 75V-rated circuits.
Q: Why does STB75NF75T4 have a higher power dissipation rating (300W) than FDB088N08 (160W)?
A: Power dissipation rating reflects the maximum thermal capability of the device package and die design. Higher power dissipation ratings indicate superior thermal performance but do not change the electrical operating characteristics. Both parts are suitable for equivalent electrical applications within their respective current ratings.
Q: Are all substitute parts RoHS3 compliant?
A: All substitute parts listed are RoHS3 compliant except BUK9609-75A,118, which is not explicitly marked as RoHS3 compliant in the provided specifications. BUK9609-75A,118 carries AEC-Q101 automotive qualification. Verify RoHS compliance requirements for your specific application before selection.
Q: What is the impact of Vgs Max differences between FDB088N08 (±20V) and BUK9609-75A,118 (±10V)?
A: Vgs Max defines the maximum gate-to-source voltage the device can withstand. BUK9609-75A,118 has a more restrictive limit of ±10V compared to FDB088N08's ±20V. Gate drive circuits must be designed to operate within the ±10V range for BUK9609-75A,118 compatibility.
Q: Can PHB29N08T,118 be used as a substitute for FDB088N08?
A: PHB29N08T,118 is rated for only 27A continuous drain current, compared to FDB088N08's 120A. This part is suitable only for low-current applications and is not a functional substitute for high-current designs. Use PHB29N08T,118 only when circuit current requirements are below 27A.
Q: Do all substitute parts use the same TO-263 (D2PAK) package?
A: Yes. All substitute parts listed use the TO-263 (D2PAK) Surface Mount package with 2 Leads + Tab configuration, ensuring mechanical and thermal interface compatibility with FDB088N08 PCB layouts.
Q: What is the difference between PSMN005-75B,118 and PSMN008-75B,118?
A: Both parts are rated for 75V and 75A. PSMN005-75B,118 has lower Rds On (5.0 mOhm vs. 8.5 mOhm) and lower gate charge (165 nC vs. 122.8 nC). PSMN008-75B,118 has lower input capacitance (5260 pF vs. 8250 pF). Selection depends on whether conduction loss or switching speed is the priority in your application.
Q: Is PSMN8R7-80BS,118 suitable for 75V applications?
A: PSMN8R7-80BS,118 is rated for 80V Vdss, which exceeds the 75V requirement. It is suitable for 75V applications and provides a 5V voltage safety margin. The 90A current rating is lower than FDB088N08's 120A but higher than most other substitutes.
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