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FDB075N15A-F085 Equivalent & Substitute Parts
Part Overview
The FDB075N15A-F085 is an N-Channel 150V 110A MOSFET manufactured by onsemi in the PowerTrench® series, housed in a TO-263 (D2PAK) surface mount package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity. The part delivers 333W maximum power dissipation at case temperature and operates across the automotive temperature range of -55°C to 175°C, meeting AEC-Q101 qualification standards.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 150 | V |
| Continuous Drain Current (Id) @ 25°C | 110 | A (Tc) |
| On-Resistance (Rds On) @ 80A, 10V | 7.5 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 4 | V |
| Gate Charge (Qg) @ 10V | 95 | nC |
| Power Dissipation (Max) | 333 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | TO-263 (D2PAK) | Surface Mount |
| Qualification | AEC-Q101 | Automotive |
Substitute Part Grouping Explanation
Substitution of the FDB075N15A-F085 is determined by the following critical electrical and mechanical parameters:
Electrical Compatibility Criteria:
- Drain to Source Voltage (Vdss) must equal or exceed 150V
- Continuous Drain Current (Id) must support the application's current requirements
- On-Resistance (Rds On) characteristics must be compatible with thermal and efficiency constraints
- Gate Threshold Voltage (Vgs(th)) must fall within acceptable switching margins
- Operating temperature range must encompass -55°C to 175°C
Mechanical Compatibility Criteria:
- Surface mount package configuration
- Pin/lead compatibility with existing PCB layouts
- Thermal characteristics suitable for the application's power dissipation requirements
Compliance Requirements:
- RoHS3 compliance
- Moisture Sensitivity Level (MSL) of 1 or better
- REACH unaffected status
The substitute parts identified below satisfy these criteria while offering either active product status or enhanced electrical performance characteristics.
Parameter Comparison
| Parameter | FDB075N15A-F085 | NVMTSC4D3N15MC | IPB072N15N3GATMA1 | AOB2500L |
|---|---|---|---|---|
| Manufacturer | onsemi | onsemi | Infineon Technologies | Alpha & Omega Semiconductor Inc. |
| Vdss (V) | 150 | 150 | 150 | 150 |
| Id @ 25°C (A) | 110 (Tc) | 165 (Tc) | 100 (Tc) | 152 (Tc) |
| Rds On (mOhm) | 7.5 @ 80A, 10V | 4.45 @ 95A, 10V | 7.2 @ 100A, 10V | 6.2 @ 20A, 10V |
| Vgs(th) (V) | 4 @ 250µA | 4.5 @ 521µA | 4 @ 270µA | 3.5 @ 250µA |
| Gate Charge (nC) | 95 @ 10V | 79 @ 10V | 93 @ 10V | 136 @ 10V |
| Power Dissipation (W) | 333 (Tc) | 292 (Tc) | 300 (Tc) | 375 (Tc) |
| Operating Temperature (°C) | -55 to 175 | -55 to 175 | -55 to 175 | -55 to 175 |
| Package Type | TO-263 (D2PAK) | 8-TDFNW (8.3x8.4) | TO-263-3 (D2PAK) | TO-263 (D2PAK) |
| Product Status | Obsolete | Active | Active | Active |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| MSL | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
Engineering Selection Recommendations
IPB072N15N3GATMA1 (Infineon Technologies OptiMOS™)
The IPB072N15N3GATMA1 provides the closest electrical match to the FDB075N15A-F085 while maintaining active product status. This device delivers 100A continuous drain current at case temperature with 7.2mOhm on-resistance at 10V gate drive, closely paralleling the original part's 110A and 7.5mOhm specifications. The TO-263-3 package maintains mechanical compatibility with existing PCB designs. Gate charge of 93nC and threshold voltage of 4V at 270µA ensure compatible switching characteristics. Active product status and full AEC-Q101 automotive qualification provide long-term supply assurance and compliance continuity.
AOB2500L (Alpha & Omega Semiconductor Inc.)
The AOB2500L offers the highest continuous drain current rating at 152A (Tc) with 6.2mOhm on-resistance, delivering superior thermal performance and lower conduction losses. The TO-263 (D2PAK) package provides direct mechanical compatibility. This device is suitable for applications requiring enhanced current handling or reduced thermal dissipation. Gate charge of 136nC represents a higher value than the original part, requiring verification of gate drive circuit capability. Active product status and automotive-grade compliance support production continuity.
NVMTSC4D3N15MC (onsemi DUAL COOL®)
The NVMTSC4D3N15MC represents an alternative from the original manufacturer with enhanced electrical performance, delivering 165A continuous drain current at case temperature and 4.45mOhm on-resistance. The 8-TDFNW package differs mechanically from the original TO-263 configuration, requiring PCB redesign. Lower gate charge of 79nC improves switching efficiency. This device is classified as active and maintains full compliance certifications. Package transition necessitates design validation before implementation.
Frequently Asked Questions (FAQ)
Q: Can the IPB072N15N3GATMA1 directly replace the FDB075N15A-F085 without PCB modifications?
A: Yes. Both devices use the TO-263-3 (D2PAK) package with identical pin configurations and mechanical footprints. Electrical parameters are closely matched, supporting direct substitution in existing designs.
Q: What is the primary advantage of the AOB2500L over the original FDB075N15A-F085?
A: The AOB2500L provides 152A continuous drain current and 6.2mOhm on-resistance, delivering improved current handling capacity and reduced conduction losses. Power dissipation capability reaches 375W at case temperature, exceeding the original 333W specification.
Q: Why does the NVMTSC4D3N15MC require PCB redesign?
A: The NVMTSC4D3N15MC uses an 8-TDFNW (8.3x8.4) package, which differs mechanically from the original TO-263 (D2PAK) configuration. PCB footprint, thermal via patterns, and lead spacing require modification to accommodate this package type.
Q: Are all substitute parts automotive-qualified?
A: Yes. The IPB072N15N3GATMA1 and AOB2500L both carry automotive-grade classification with AEC-Q101 qualification. The NVMTSC4D3N15MC is classified as active with automotive-grade status. All three maintain compliance with RoHS3, REACH, and MSL requirements.
Q: How do gate charge differences affect circuit design?
A: Gate charge variations influence gate drive circuit design and switching speed. The original FDB075N15A-F085 specifies 95nC at 10V. The IPB072N15N3GATMA1 (93nC) and NVMTSC4D3N15MC (79nC) require proportionally lower gate drive energy. The AOB2500L (136nC) requires higher gate drive capability. Existing gate drive circuits must be evaluated for compatibility with each substitute part's gate charge specification.
Q: What is the significance of the Vgs(th) threshold voltage differences?
A: Threshold voltage determines the gate voltage at which the MOSFET begins to conduct. The original part specifies 4V at 250µA. Substitute parts range from 3.5V to 4.5V, all within acceptable switching margins for standard gate drive circuits. Threshold voltage differences do not preclude substitution in typical applications.
Q: Can the NVMTSC4D3N15MC be used in high-frequency switching applications?
A: The NVMTSC4D3N15MC exhibits lower gate charge (79nC) compared to the original part (95nC), supporting faster switching transitions and reduced switching losses. The dual-channel configuration of this device may introduce additional considerations depending on application requirements.
Q: What inventory considerations apply to these substitute parts?
A: The IPB072N15N3GATMA1 maintains the highest inventory level at 26,434 pieces. The AOB2500L provides 19,207 pieces in stock. The NVMTSC4D3N15MC offers 1,179 pieces. Inventory levels support production requirements across various volume scenarios.
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