FDB047N10 N-Channel MOSFET 100V 120A Equivalent & Substitute Parts

Part Overview

The FDB047N10 is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with 120A continuous drain current at 25°C. This device operates in the PowerTrench® series and is housed in a TO-263 (D2PAK) surface mount package. The part is Active in product status and RoHS3 compliant.

Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, on-state resistance characteristics, and compatible surface mount packaging. Substitutes enable design flexibility, support supply chain alternatives, and provide options across multiple semiconductor manufacturers including Vishay Siliconix, Infineon Technologies, and Nexperia USA Inc.

Key Parameters

Parameter	FDB047N10 Value	Unit
Drain to Source Voltage (Vdss)	100	V
Current - Continuous Drain (Id) @ 25°C	120	A (Tc)
Rds On (Max) @ Id, Vgs	4.7 mOhm @ 75A, 10V	mOhm
Gate Charge (Qg) (Max) @ Vgs	210	nC @ 10V
Vgs(th) (Max) @ Id	4.5	V @ 250µA
Power Dissipation (Max)	375	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Mounting Type	Surface Mount	-
Package / Case	TO-263-3, D2PAK (2 Leads + Tab)	-
FET Type	N-Channel	-
Technology	MOSFET (Metal Oxide)	-

Substitute Part Grouping Explanation

Substitute parts for the FDB047N10 are classified based on the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 100V or higher
Continuous Drain Current (Id): 100A or higher at 25°C
On-State Resistance (Rds On): Comparable or lower values at rated conditions
Gate Charge (Qg): Similar or lower values to maintain switching characteristics
Mounting Type: Surface Mount
Package Compatibility: TO-263 variants (D2PAK, TO-263-3, TO-263-7, PG-TO263-3)
Operating Temperature Range: -55°C to 175°C or better
Compliance: RoHS3 compliant, REACH unaffected

Direct Equivalents match all critical parameters within acceptable engineering tolerances and share identical or pin-compatible packaging.

Similar Substitutes meet or exceed voltage and current ratings but may have variations in secondary parameters such as gate charge, input capacitance, or power dissipation. These parts are suitable for applications where the FDB047N10 specifications define a design ceiling rather than a precise requirement.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Package	Status
FDB047N10	onsemi	100	120	4.7 @ 75A, 10V	210 @ 10V	TO-263-3, D2PAK	Active
SUM70040M-GE3	Vishay Siliconix	100	120	3.8 @ 20A, 10V	120 @ 10V	TO-263-7, D2PAK	Active
PSMN3R8-100BS,118	Nexperia USA Inc.	100	120	3.9 @ 25A, 10V	170 @ 10V	TO-263-3, D2PAK	Active
IPB038N12N3GATMA1	Infineon Technologies	120	120	3.8 @ 100A, 10V	211 @ 10V	PG-TO263-3	Active
IRF100S201	Infineon Technologies	100	192	4.2 @ 115A, 10V	255 @ 10V	PG-TO263-3	Active
IPB042N10N3GATMA1	Infineon Technologies	100	100	4.2 @ 50A, 10V	117 @ 10V	PG-TO263-3	Active
PSMN015-100B,118	Nexperia USA Inc.	100	75	15 @ 25A, 10V	90 @ 10V	TO-263-3, D2PAK	Active
PHB27NQ10T,118	Nexperia USA Inc.	100	28	50 @ 14A, 10V	30 @ 10V	TO-263-3, D2PAK	Active
IRF3808STRLPBF	Infineon Technologies	75	106	7 @ 82A, 10V	220 @ 10V	TO-263-3, D2PAK	Active
PHB45NQ10T,118	Nexperia USA Inc.	100	47	25 @ 25A, 10V	61 @ 10V	TO-263-3, D2PAK	Active
PSMN5R6-100BS,118	Nexperia USA Inc.	100	100	5.6 @ 25A, 10V	141 @ 10V	TO-263-3, D2PAK	Active

Engineering Selection Recommendations

Direct Equivalent Selection:

The SUM70040M-GE3 (Vishay Siliconix) and PSMN3R8-100BS,118 (Nexperia USA Inc.) are direct equivalents to the FDB047N10. Both devices match the 100V/120A rating and are housed in compatible D2PAK packages. The SUM70040M-GE3 offers improved on-state resistance (3.8 mOhm) and reduced gate charge (120 nC), resulting in lower switching losses. The PSMN3R8-100BS,118 provides comparable performance with 3.9 mOhm on-state resistance and 170 nC gate charge. Both parts are Active in product status, RoHS3 compliant, and REACH unaffected.

Higher Current Capability:

The IRF100S201 (Infineon Technologies) provides 192A continuous drain current at 100V, exceeding the FDB047N10 specification. This part is suitable for applications requiring additional current margin or thermal headroom. The device maintains compatible TO-263-3 packaging and is Active with full compliance certifications.

Higher Voltage Rating:

The IPB038N12N3GATMA1 (Infineon Technologies) operates at 120V drain-to-source voltage while maintaining 120A continuous drain current. This part accommodates applications with higher voltage transients or design margins. The OptiMOS™ series technology provides 3.8 mOhm on-state resistance at 100A, 10V. Package compatibility is maintained through PG-TO263-3 (TO-263-3 variant).

Lower Current Applications:

The IPB042N10N3GATMA1 (Infineon Technologies) is rated for 100A continuous drain current at 100V, suitable for applications where the full 120A capability of the FDB047N10 is not required. This part offers reduced gate charge (117 nC) and lower input capacitance, improving switching performance in lower-current designs.

All substitute parts listed are Active in product status and maintain RoHS3 compliance and REACH unaffected status, ensuring regulatory alignment with the original FDB047N10.

Frequently Asked Questions (FAQ)

Q: Can the SUM70040M-GE3 directly replace the FDB047N10 in existing designs?

A: The SUM70040M-GE3 is a direct functional equivalent with matching 100V/120A ratings and D2PAK packaging. The primary difference is the package variant (TO-263-7 versus TO-263-3), which may require PCB layout verification. Pin configuration and electrical characteristics are compatible. Confirm footprint compatibility before implementation.

Q: What is the difference between TO-263-3 and TO-263-7 packaging?

A: TO-263-3 (D2PAK) contains 2 leads plus a tab for thermal connection. TO-263-7 contains 6 leads plus a tab. Both are surface mount packages in the TO-263 family. The TO-263-7 variant (SUM70040M-GE3) provides additional lead connections but maintains the same thermal tab interface. PCB footprint differences require design verification.

Q: Why does the IRF100S201 have higher gate charge (255 nC) than the FDB047N10 (210 nC)?

A: The IRF100S201 is rated for 192A continuous drain current, exceeding the FDB047N10 specification of 120A. Higher current capability typically correlates with increased gate charge due to larger die size and increased capacitance. The higher gate charge results in longer switching times but does not prevent substitution in applications where the additional current margin is beneficial.

Q: Is the IPB038N12N3GATMA1 suitable for 100V applications?

A: Yes. The IPB038N12N3GATMA1 is rated for 120V drain-to-source voltage, which exceeds the 100V requirement of the FDB047N10. This part operates safely in 100V applications and provides additional voltage margin for transient protection. The 120A continuous drain current matches the FDB047N10 specification.

Q: Can lower-current parts like PHB27NQ10T,118 (28A) be used as substitutes?

A: Lower-current parts are not suitable as direct substitutes for the FDB047N10 in applications requiring 120A continuous drain current. These parts are listed as alternatives only for designs with reduced current requirements. Using an undersized device results in thermal stress, reduced reliability, and potential failure.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this reference are RoHS3 compliant and REACH unaffected, matching the regulatory status of the FDB047N10. Compliance certifications are maintained across all manufacturers (onsemi, Vishay Siliconix, Infineon Technologies, Nexperia USA Inc.).

Q: What is the significance of on-state resistance (Rds On) differences between parts?

A: On-state resistance directly affects power dissipation and thermal performance. Lower Rds On values reduce conduction losses. The FDB047N10 specifies 4.7 mOhm at 75A, 10V. Substitute parts with lower Rds On (such as SUM70040M-GE3 at 3.8 mOhm) improve efficiency. Higher Rds On values increase heat generation and may require thermal design adjustments.

Q: Can the IRF3808STRLPBF (75V rating) substitute for the FDB047N10 (100V rating)?

A: The IRF3808STRLPBF is not suitable as a substitute due to its 75V drain-to-source voltage rating, which is below the FDB047N10 specification of 100V. Using an undersized voltage-rated device creates risk of breakdown in applications with 100V supply or transient voltages. This part is listed for reference only and is not recommended for direct substitution.

Q: What packaging considerations apply when switching between manufacturers?

A: All substitute parts use TO-263 family packaging (D2PAK, TO-263-3, TO-263-7, or PG-TO263-3 variants). While pin counts and lead configurations may differ, thermal tab interfaces are compatible. PCB footprint verification is required before design implementation. Consult manufacturer datasheets for precise lead spacing and solder pad dimensions.

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