FDB031N08 Equivalent & Substitute Parts

Part Overview

The FDB031N08 is an N-Channel MOSFET manufactured by onsemi, rated for 75V drain-to-source voltage with 120A continuous drain current at 25°C. This device is housed in a TO-263 (D2PAK) surface mount package and is designed for high-current switching applications requiring efficient power dissipation up to 375W. The part carries a Last Time Buy product status, indicating that onsemi has discontinued this device. Identifying equivalent and substitute parts is necessary to maintain design continuity and ensure long-term component availability for new production runs and field replacements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	120	A
On-State Resistance (Rds On) @ 75A, 10V	3.1	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4.5	V
Gate Charge (Qg) @ 10V	220	nC
Power Dissipation (Max)	375	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-263-3 (D2PAK)	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the FDB031N08 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must be equal to or greater than 75V
Continuous Drain Current (Id): Must be equal to or greater than 120A at 25°C
On-State Resistance (Rds On): Lower or equivalent values ensure comparable switching performance
Package Type: Surface mount D2PAK (TO-263-3) or compatible variants
Operating Temperature Range: Must support -55°C to 175°C
Gate Threshold Voltage: Must be compatible with 10V drive voltage

Substitution Categories:

Direct Equivalents (Same Vdss, Same or Higher Id): Parts with 75V rating and 120A or greater current capability in D2PAK packaging.

Functional Equivalents (Higher Vdss, Same or Higher Id): Parts with 80V rating and 120A or greater current capability. The higher voltage rating provides additional design margin while maintaining or improving current handling.

Partial Equivalents (Same Vdss, Lower Id): Parts with 75V rating but reduced current capability. These are suitable only for applications where the full 120A rating is not required.

Lower Voltage Alternatives (Lower Vdss, Higher Id): Parts with 55V rating and significantly higher current capability (260A). These are suitable only for applications with lower voltage requirements.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Package	Status
FDB031N08	onsemi	75	120	3.1 @ 75A, 10V	220 @ 10V	375	TO-263-3	Last Time Buy
FDB024N08BL7	onsemi	80	120	2.4 @ 100A, 10V	178 @ 10V	246	TO-263-7	Active
IPB035N08N3GATMA1	Infineon	80	100	3.5 @ 100A, 10V	117 @ 10V	214	TO-263-3	Active
IPB90N06S404ATMA2	Infineon	60	90	4 @ 90A, 10V	128 @ 10V	150	TO-263-3	Obsolete
IXTA260N055T2-7	IXYS	55	260	3.3 @ 50A, 10V	140 @ 10V	480	TO-263-7	Active
PHB29N08T,118	NXP	75	27	50 @ 14A, 11V	19 @ 10V	88	TO-263-3	Active
PSMN005-75B,118	Nexperia	75	75	5 @ 25A, 10V	165 @ 10V	230	TO-263-3	Active
PSMN008-75B,118	Nexperia	75	75	8.5 @ 25A, 10V	122.8 @ 10V	230	TO-263-3	Active
PSMN2R8-80BS,118	Nexperia	80	120	3 @ 25A, 10V	139 @ 10V	306	TO-263-3	Active
PSMN3R3-80BS,118	Nexperia	80	120	3.5 @ 25A, 10V	111 @ 10V	306	TO-263-3	Active
STB160N75F3	STMicroelectronics	75	120	4 @ 60A, 10V	85 @ 10V	330	TO-263-3	Active

Engineering Selection Recommendations

Recommended Primary Substitutes (Direct Functional Equivalents):

The FDB024N08BL7 (onsemi) and PSMN2R8-80BS,118 (Nexperia) are the preferred substitutes. Both devices maintain 120A continuous drain current capability with 80V Vdss rating, providing improved voltage margin over the original FDB031N08. The FDB024N08BL7 is an onsemi product, maintaining manufacturer consistency. The PSMN2R8-80BS,118 offers superior on-state resistance (3.0 mOhm) and is in Active product status with high inventory availability (52,225 units). Both parts are housed in D2PAK packaging compatible with the original footprint and are RoHS3 compliant.

The STB160N75F3 (STMicroelectronics) is an alternative direct equivalent, maintaining the original 75V/120A specification with D2PAK packaging. This part offers lower gate charge (85 nC) compared to the FDB031N08 (220 nC), resulting in faster switching characteristics.

Secondary Substitutes (Functional Equivalents with Trade-offs):

The PSMN3R3-80BS,118 (Nexperia) provides 80V/120A capability with improved gate charge characteristics (111 nC) and is in Active status with substantial inventory (19,914 units).

The IPB035N08N3GATMA1 (Infineon) offers 80V rating with 100A continuous current, suitable for applications where the full 120A capability is not required. This part features lower gate charge (117 nC) and is in Active status.

Not Recommended:

The IPB90N06S404ATMA2 (Infineon) is marked Obsolete and has reduced voltage (60V) and current (90A) ratings, making it unsuitable for direct substitution.

The PHB29N08T,118 (NXP) has significantly reduced current capability (27A) and is not suitable for applications requiring 120A operation.

The IXTA260N055T2-7 (IXYS) has a lower voltage rating (55V) and is suitable only for applications with reduced voltage requirements.

Frequently Asked Questions (FAQ)

Q: Can I use the FDB024N08BL7 as a direct replacement for the FDB031N08?

A: Yes. The FDB024N08BL7 maintains the same 120A continuous drain current and provides an improved 80V Vdss rating compared to the original 75V specification. Both devices use D2PAK packaging and are compatible with the same PCB footprint. The higher voltage rating provides additional design margin without compromising performance.

Q: What is the difference between TO-263-3 and TO-263-7 packaging?

A: TO-263-3 (D2PAK) contains 3 leads (Gate, Drain, Source) plus a tab. TO-263-7 contains 6 leads plus a tab, with multiple internal connections for improved thermal and electrical performance. Devices in TO-263-7 packaging are not pin-compatible with TO-263-3 footprints and require PCB redesign.

Q: Why do some substitutes have lower power dissipation ratings than the FDB031N08?

A: Power dissipation rating depends on thermal design and die size. Lower ratings do not indicate inferior performance; they reflect the manufacturer's thermal specifications under standard test conditions. The actual power dissipation in your application depends on switching frequency, duty cycle, and thermal management design.

Q: Is the PSMN2R8-80BS,118 suitable for my application if I need exactly 120A at 75V?

A: Yes. The PSMN2R8-80BS,118 is rated for 120A at 80V, which exceeds the original 75V/120A specification. The higher voltage rating provides additional safety margin and is fully compatible with 75V applications. The improved on-state resistance (3.0 mOhm) offers better efficiency.

Q: Can I substitute a part with lower gate charge?

A: Yes, if your gate driver circuit is compatible. Lower gate charge (such as the STB160N75F3 at 85 nC versus the FDB031N08 at 220 nC) results in faster switching and reduced driver power consumption. Verify that your gate driver can supply the required gate current for the substitute device.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All recommended substitute parts listed in this document are RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.

Q: What should I consider when selecting between PSMN2R8-80BS,118 and PSMN3R3-80BS,118?

A: Both parts are rated for 80V/120A in D2PAK packaging and are in Active status. The PSMN2R8-80BS,118 has lower on-state resistance (3.0 mOhm) and higher gate charge (139 nC), resulting in lower conduction losses but higher switching losses. The PSMN3R3-80BS,118 has slightly higher on-state resistance (3.5 mOhm) but lower gate charge (111 nC), resulting in lower switching losses. Select based on your application's switching frequency and thermal requirements.

Q: Is the IPB035N08N3GATMA1 suitable if my application requires 120A?

A: The IPB035N08N3GATMA1 is rated for 100A continuous drain current, which is below the original 120A specification. This part is suitable only for applications where the maximum required current is 100A or less. For applications requiring the full 120A capability, use FDB024N08BL7, PSMN2R8-80BS,118, PSMN3R3-80BS,118, or STB160N75F3.

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