FDB024N06 Equivalent & Substitute Parts

Part Overview

The FDB024N06 is an N-Channel 60V 120A MOSFET manufactured by onsemi in the PowerTrench® series, housed in a TO-263 (D2PAK) surface mount package. This device is rated for 395W maximum power dissipation and operates across a temperature range of -55°C to 175°C. The part is designated as Last Time Buy, indicating that onsemi has discontinued or will discontinue production. Identifying equivalent and substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and support long-term product availability for applications requiring this performance class.

Substiute Parts

FDB024N06
onsemiIn Stock: 2558FDB024N06 Datasheet
FDB024N06
Current Part
NTBGS1D5N06C
onsemiIn Stock: 1039NTBGS1D5N06C Datasheet
NTBGS1D5N06C
MFR Recommended
BUK762R4-60E,118
Nexperia USA Inc.In Stock: 1088BUK762R4-60E,118 Datasheet
BUK762R4-60E,118
Similar
BUK762R6-60E,118
Nexperia USA Inc.In Stock: 5638BUK762R6-60E,118 Datasheet
BUK762R6-60E,118
Similar
BUK962R8-60E,118
Nexperia USA Inc.In Stock: 1068BUK962R8-60E,118 Datasheet
BUK962R8-60E,118
Similar
IPB120N06S402ATMA2
Infineon TechnologiesIn Stock: 3598IPB120N06S402ATMA2 Datasheet
IPB120N06S402ATMA2
Similar
PSMN004-60B,118
Nexperia USA Inc.In Stock: 9065PSMN004-60B,118 Datasheet
PSMN004-60B,118
Similar
PSMN1R7-60BS,118
Nexperia USA Inc.In Stock: 1917PSMN1R7-60BS,118 Datasheet
PSMN1R7-60BS,118
Similar
PSMN3R0-60BS,118
Nexperia USA Inc.In Stock: 5651PSMN3R0-60BS,118 Datasheet
PSMN3R0-60BS,118
Similar
STH260N6F6-2
STMicroelectronicsIn Stock: 33491STH260N6F6-2 Datasheet
STH260N6F6-2
Similar

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 120 A (Tc)
Rds On (Max) @ 75A, 10V 2.4 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4.5 V
Gate Charge (Qg) @ 10V 226 nC
Input Capacitance (Ciss) @ 25V 14885 pF
Power Dissipation (Max) 395 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Package Type TO-263 (D2PAK) Surface Mount
Vgs (Max) ±20 V

Substitute Part Grouping Explanation

Substitution of the FDB024N06 is determined by strict alignment of the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain to Source Voltage (Vdss): Must equal 60V
  • Continuous Drain Current (Id): Must equal or exceed 120A (Tc)
  • Package Type: Must be TO-263 (D2PAK) surface mount
  • Operating Temperature Range: Must span -55°C to 175°C
  • Gate Drive Voltage: Must support 10V operation
  • Maximum Gate Voltage (Vgs): Must support ±20V

Secondary Compatibility Factors:

  • Rds On characteristics must be within acceptable range for the application
  • Gate Charge and Input Capacitance values influence switching performance
  • Power dissipation capability must support thermal requirements

Substitute parts are grouped into two categories:

Direct Equivalents (Manufacturer Recommended): Parts meeting all primary criteria with identical or superior electrical performance in the same package footprint.

Similar Alternatives (Active or Automotive-Grade): Parts meeting primary voltage and current criteria with minor variations in secondary parameters, offered by alternative manufacturers with active product status or automotive qualification.

Parameter Comparison

Parameter FDB024N06 NTBGS1D5N06C BUK762R4-60E,118 BUK762R6-60E,118 BUK962R8-60E,118 IPB120N06S402ATMA2 PSMN1R7-60BS,118 PSMN3R0-60BS,118 STH260N6F6-2
Manufacturer onsemi onsemi Nexperia Nexperia Nexperia Infineon Nexperia Nexperia STMicroelectronics
Vdss (V) 60 60 60 60 60 60 60 60 60
Id @ 25°C (A, Tc) 120 267 120 120 120 120 120 100 180
Rds On (Max) @ 10V (mOhm) 2.4 @ 75A 1.55 @ 64A, 12V 2.4 @ 25A 2.6 @ 25A 2.5 @ 25A 2.8 @ 100A 2.0 @ 25A 3.2 @ 25A 2.4 @ 60A
Vgs(th) (V) 4.5 @ 250µA 4.0 @ 318µA 4.0 @ 1mA 4.0 @ 1mA 2.1 @ 1mA 4.0 @ 140µA 4.0 @ 1mA 4.0 @ 1mA 4.0 @ 250µA
Qg @ 10V (nC) 226 78.6 158 140 92 195 137 130 183
Ciss @ 25V (pF) 14885 6250 11180 10170 15600 15750 9997 8079 11800
Power Dissipation (Max, W, Tc) 395 211 357 324 324 188 306 306 300
Operating Temp Range (°C) -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175
Package TO-263 (D2PAK) TO-263 (D2PAK) D2PAK D2PAK D2PAK PG-TO263-3-2 D2PAK D2PAK H2PAK-2
Vgs (Max) (V) ±20 ±20 ±20 ±20 ±10 ±20 ±20 ±20 ±20
Product Status Last Time Buy Last Time Buy Active Active Obsolete Active Active Active Active
RoHS Compliance ROHS3 ROHS3 ROHS3 ROHS3 ROHS3 ROHS3 ROHS3 ROHS3 ROHS3
Automotive Grade No No Yes (AEC-Q101) Yes (AEC-Q101) Yes (AEC-Q101) Yes (AEC-Q101) No No No

Engineering Selection Recommendations

Tier 1: Manufacturer Recommended Equivalent

NTBGS1D5N06C (onsemi) is the manufacturer-recommended substitute. Although it carries Last Time Buy status identical to the FDB024N06, it provides superior electrical characteristics with lower Rds On (1.55 mOhm vs. 2.4 mOhm) and significantly reduced gate charge (78.6 nC vs. 226 nC). The continuous drain current rating of 267A (Tc) exceeds the 120A requirement. This part maintains full compatibility with ±20V gate voltage specification and identical operating temperature range. Both parts are ROHS3 compliant and carry unlimited moisture sensitivity level (MSL 1).

Tier 2: Active Automotive-Grade Alternatives

BUK762R4-60E,118 and BUK762R6-60E,118 (Nexperia, TrenchMOS™ series) are active products with AEC-Q101 automotive qualification. Both maintain 120A continuous drain current and 60V Vdss rating. BUK762R4-60E exhibits 2.4 mOhm Rds On matching the FDB024N06, while BUK762R6-60E provides 2.6 mOhm. Gate charge values (158 nC and 140 nC respectively) are substantially lower than the original part. Power dissipation ratings (357W and 324W) are comparable. These parts support ±20V gate voltage and identical temperature range. Active product status ensures long-term availability.

Tier 3: High-Current Alternative

STH260N6F6-2 (STMicroelectronics, DeepGATE™/STripFET™ VI series) offers 180A continuous drain current in an H2PAK-2 package variant. This part provides superior current handling with 2.4 mOhm Rds On at 60A and 300W power dissipation. Gate charge (183 nC) and input capacitance (11800 pF) are within acceptable range. Active product status and ±20V gate voltage support ensure compatibility. Package footprint differs from standard D2PAK but maintains TO-263 family compatibility.

Tier 4: Lower-Current Alternatives

PSMN3R0-60BS,118 (Nexperia) provides 100A continuous drain current with 3.2 mOhm Rds On and 306W power dissipation. This part is suitable for applications where 100A current capacity is sufficient. PSMN1R7-60BS,118 (Nexperia) maintains full 120A rating with superior 2.0 mOhm Rds On and 306W power dissipation, offering improved efficiency characteristics.

Tier 5: Infineon OptiMOS™ Alternative

IPB120N06S402ATMA2 (Infineon) matches 120A continuous drain current with AEC-Q101 automotive qualification. The 2.8 mOhm Rds On and 188W power dissipation represent acceptable trade-offs. Gate charge (195 nC) and input capacitance (15750 pF) are comparable to the original part. Active product status and automotive qualification support long-term design security.

Parts to Avoid:

BUK962R8-60E,118 carries Obsolete product status and exhibits reduced maximum gate voltage (±10V vs. ±20V), limiting compatibility with standard gate drive circuits. This part should not be selected for new designs.

Frequently Asked Questions (FAQ)

Q: Can I directly replace FDB024N06 with NTBGS1D5N06C without circuit modifications?

A: Yes. NTBGS1D5N06C is the manufacturer-recommended equivalent with identical Vdss (60V), matching continuous drain current (120A Tc), and compatible gate voltage specification (±20V). Both parts operate across -55°C to 175°C and are housed in TO-263 (D2PAK) packages. The lower gate charge and Rds On of NTBGS1D5N06C represent performance improvements that do not require circuit redesign.

Q: What is the difference between D2PAK and H2PAK-2 packages?

A: Both are TO-263 family surface mount packages with identical electrical pin configuration and footprint compatibility. H2PAK-2 is a variant designation used by STMicroelectronics. STH260N6F6-2 in H2PAK-2 package is mechanically and electrically compatible with standard D2PAK footprints used by other manufacturers.

Q: Why do some substitutes have lower continuous drain current ratings?

A: PSMN3R0-60BS,118 is rated for 100A continuous drain current versus the FDB024N06's 120A. This part is suitable only for applications where peak current demand does not exceed 100A. For designs requiring full 120A capability, select alternatives rated for 120A or higher (BUK762R4-60E, BUK762R6-60E, PSMN1R7-60BS,118, or STH260N6F6-2).

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts carry ROHS3 compliance certification, matching the FDB024N06. All parts are REACH Unaffected and carry EAR99 export classification.

Q: Which substitute offers the best efficiency?

A: PSMN1R7-60BS,118 provides the lowest Rds On specification at 2.0 mOhm (measured at 25A, 10V), resulting in reduced conduction losses. NTBGS1D5N06C offers 1.55 mOhm Rds On at 64A with 12V gate drive, providing superior efficiency at higher current levels. Selection depends on specific operating point requirements.

Q: Can I use BUK962R8-60E,118 as a substitute?

A: BUK962R8-60E,118 is designated Obsolete and exhibits reduced maximum gate voltage (±10V vs. ±20V required). This part is not recommended for new designs or long-term applications. Select from active alternatives: BUK762R4-60E, BUK762R6-60E, PSMN1R7-60BS,118, or STH260N6F6-2.

Q: What is the significance of AEC-Q101 qualification?

A: AEC-Q101 certification indicates automotive-grade qualification and enhanced reliability testing. BUK762R4-60E, BUK762R6-60E, and IPB120N06S402ATMA2 carry this qualification, making them suitable for automotive and high-reliability applications. Non-automotive parts (PSMN series, STH260N6F6-2) are suitable for industrial and consumer applications.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. FDB024N06 requires 226 nC at 10V, while NTBGS1D5N06C requires only 78.6 nC. Lower gate charge reduces switching losses and allows faster switching speeds with lower gate drive current requirements. This is a performance improvement that does not require circuit modification.

Q: Are there any thermal considerations when substituting?

A: Power dissipation ratings vary among substitutes. FDB024N06 is rated for 395W (Tc), while alternatives range from 188W to 357W. Ensure the selected substitute's power dissipation rating meets thermal requirements of the application. Higher-rated parts (BUK762R4-60E at 357W, STH260N6F6-2 at 300W) provide thermal margin. Lower-rated parts (IPB120N06S402ATMA2 at 188W) require careful thermal analysis.

Q: Can I mix different substitute parts in the same circuit?

A: Yes, provided all selected parts meet the minimum electrical requirements (60V Vdss, 120A Id, ±20V Vgs, -55°C to 175°C operating range) and are housed in compatible packages. Mixing parts with different Rds On values may result in unequal current distribution in parallel configurations. For parallel operation, select parts with matched Rds On specifications or implement current-sharing circuitry.

Request Quote (Ships tomorrow)