FDB024N04AL7 Equivalent & Substitute Parts

Part Overview

The FDB024N04AL7 is an N-Channel MOSFET rated for 40V drain-to-source voltage with 100A continuous drain current in a TO-263-7 surface mount package. Manufactured by onsemi under the PowerTrench® series, this device is classified as Obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute devices must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while accommodating the TO-263-7 package form factor.

Substiute Parts

FDB024N04AL7

onsemiIn Stock: 5228FDB024N04AL7 Datasheet

Current PartRFQ

FDB024N04AL7

Fairchild SemiconductorIn Stock: 5212FDB024N04AL7 Datasheet

DirectRFQ

IPB020N04NGATMA1

Infineon TechnologiesIn Stock: 4395IPB020N04NGATMA1 Datasheet

SimilarRFQ

NP160N04TUG-E1-AY

Renesas Electronics CorporationIn Stock: 741NP160N04TUG-E1-AY Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDB024N04AL7 is determined by the following electrical and mechanical criteria:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 40V
• Continuous Drain Current (Id): Must meet or exceed 100A at 25°C
• Package Type: Must be TO-263-7 (D2PAK with 6 Leads + Tab)
• Mounting Type: Surface Mount
• Operating Temperature Range: Must support -55°C to 175°C minimum

Secondary Compatibility Factors:

• On-Resistance (Rds On): Lower or equal values indicate improved performance
• Gate Charge (Qg): Affects switching speed and drive requirements
• Power Dissipation: Thermal management capability

Substitute parts are grouped into two categories: Direct Equivalents (identical electrical specifications) and Similar Alternatives (enhanced performance within the same voltage and package class).

Parameter Comparison

Engineering Selection Recommendations

Direct Equivalent (Recommended for Replacement):

The FDB024N04AL7 from Fairchild Semiconductor is the direct electrical and mechanical equivalent to the onsemi FDB024N04AL7. This part maintains identical specifications across all critical parameters: 40V Vdss, 100A continuous drain current, 2.4mOhm Rds On, and TO-263-7 package configuration. The Fairchild variant carries Active product status, ensuring long-term availability and supply chain continuity. Both devices are RoHS3 compliant and support the full -55°C to 175°C operating temperature range.

Enhanced Performance Alternatives:

The IPB020N04NGATMA1 (Infineon OptiMOS™) and NP160N04TUG-E1-AY (Renesas) provide higher continuous drain current ratings (140A and 160A respectively) within the same 40V voltage class and TO-263-7 package. These devices offer improved on-resistance characteristics and are suitable for applications requiring higher current capacity or lower conduction losses. The Renesas NP160N04TUG-E1-AY carries Active product status with 220W power dissipation capability. The Infineon IPB020N04NGATMA1 is classified as Not For New Designs but remains available for legacy system support.

Compliance Considerations:

All substitute candidates meet RoHS3 compliance requirements and REACH unaffected status. Moisture sensitivity level is rated at MSL 1 (Unlimited) across all parts, indicating no special handling requirements during storage or assembly.

Frequently Asked Questions (FAQ)

Q: Can the FDB024N04AL7 be replaced with the Fairchild Semiconductor FDB024N04AL7?

A: Yes. The Fairchild FDB024N04AL7 is a direct equivalent with identical electrical specifications and TO-263-7 package configuration. The primary advantage is Active product status, ensuring continued availability compared to the onsemi Obsolete designation.

Q: What is the difference between the onsemi FDB024N04AL7 and the Infineon IPB020N04NGATMA1?

A: Both devices share the same 40V Vdss rating and TO-263-7 package. The Infineon part provides higher continuous drain current (140A versus 100A) and lower on-resistance (2.0mOhm @ 100A versus 2.4mOhm @ 80A). Gate charge is slightly higher at 120nC. These characteristics make the Infineon device suitable for higher-current applications with reduced conduction losses.

Q: Is the Renesas NP160N04TUG-E1-AY compatible with the FDB024N04AL7 application?

A: The Renesas device maintains 40V Vdss and TO-263-7 package compatibility. It provides the highest continuous drain current rating at 160A and equivalent on-resistance at 2.0mOhm @ 80A. Gate charge is significantly higher at 270nC, which affects switching speed and gate drive requirements. The device is suitable for applications where higher current capacity and thermal performance are required.

Q: What packaging options are available for these substitute parts?

A: All substitute parts are supplied in TO-263-7 (D2PAK with 6 Leads + Tab) surface mount package. The onsemi and Infineon variants are available in Tape & Reel (TR) packaging for automated assembly. The Fairchild variant is supplied in Bulk packaging. The Renesas packaging format is not specified in available documentation.

Q: Are there thermal management differences between these devices?

A: Power dissipation ratings vary: FDB024N04AL7 (onsemi/Fairchild) at 214W (Tc), IPB020N04NGATMA1 at 167W (Tc), and NP160N04TUG-E1-AY at 220W (Tc). Higher current-rated devices (Infineon and Renesas) may require different thermal design considerations despite similar or lower power dissipation ratings due to their higher current handling capability.

Q: Do these parts require different gate drive circuits?

A: Gate threshold voltage (Vgs(th)) differs between parts: 3V for onsemi/Fairchild versus 4V for Infineon and Renesas. Gate charge also varies significantly, with the Renesas device at 270nC compared to 109-120nC for other parts. These differences may require gate drive circuit adjustments to ensure proper switching performance and minimize switching losses.

Q: What is the moisture sensitivity level for these components?

A: All parts are rated MSL 1 (Unlimited), indicating no moisture sensitivity restrictions. Standard handling procedures for surface mount components are sufficient; no special dry-pack storage or baking procedures are required.