FDA70N20 N-Channel MOSFET 200V 70A Equivalent & Substitute Parts

Part Overview

The FDA70N20 is an N-Channel MOSFET manufactured by onsemi, rated for 200V drain-to-source voltage and 70A continuous drain current in a Through Hole TO-3PN package. This device is classified as Obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. The UniFET™ series device delivers 417W maximum power dissipation and operates across the temperature range of -55°C to 150°C (TJ).

Due to its obsolete status, substitute parts with equivalent electrical characteristics and compatible packaging are required for new designs and legacy system maintenance.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	70	A (Tc)
Rds On (Max) @ Id, Vgs	35 mOhm @ 35A, 10V	mOhm
Gate Charge (Qg) (Max) @ Vgs	86	nC @ 10V
Power Dissipation (Max)	417	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package	TO-3P-3, SC-65-3	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the FDA70N20 is determined by the following critical electrical and mechanical parameters:

Primary Matching Criteria:

Drain to Source Voltage (Vdss): 200V minimum
Continuous Drain Current (Id): 70A or greater at 25°C
Gate Drive Voltage: 10V nominal
Operating Temperature Range: -55°C to 150°C or equivalent
Mounting Type: Through Hole
Technology: N-Channel MOSFET

Secondary Compatibility Factors:

On-state resistance (Rds On) within acceptable operating margins
Gate charge characteristics suitable for existing drive circuits
Power dissipation capability for thermal management
RoHS3 compliance for regulatory alignment

The substitute parts listed below meet the primary electrical specifications while accommodating package variations (TO-247AD and TO-247 formats) that maintain functional equivalence in circuit applications. Parts with lower current ratings or significantly different package geometries are excluded from this substitution list.

Parameter Comparison

Parameter	FDA70N20 (onsemi)	IXFH70N20Q3 (IXYS)	IXFH58N20 (IXYS)	IXFH50N20 (IXYS)	IXTH60N20L2 (IXYS)	2SK1317-E (Renesas)
Vdss (V)	200	200	200	200	200	1500
Id @ 25°C (A)	70	70	58	50	60	2.5
Rds On (Max) @ 10V (mOhm)	35 @ 35A	40 @ 35A	40 @ 29A	45 @ 25A	45 @ 30A	12000 @ 2A
Gate Charge @ 10V (nC)	86	67	220	220	255	—
Power Dissipation (Max) (W)	417	690	300	300	540	100
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	to 150
Package	TO-3P-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-3P-3
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute: IXFH70N20Q3

The IXFH70N20Q3 manufactured by IXYS provides the closest electrical match to the FDA70N20. Both devices share identical Vdss (200V) and Id (70A) ratings with comparable Rds On characteristics at the specified gate drive voltage. The IXFH70N20Q3 is classified as Active product status, ensuring long-term availability and supply chain stability. This device is ROHS3 compliant and maintains the full operating temperature range of -55°C to 150°C. The primary difference is package format (TO-247AD versus TO-3PN), which requires PCB layout modification but does not affect electrical performance. Power dissipation capability (690W) exceeds the original specification, providing thermal margin.

Secondary Substitutes: IXFH58N20 and IXFH50N20

The IXFH58N20 (58A) and IXFH50N20 (50A) are suitable for applications where the full 70A current rating is not required. Both maintain 200V Vdss and 10V gate drive compatibility. These devices are Active products with ROHS3 compliance. Current derating must be evaluated against circuit requirements.

Alternative Substitute: IXTH60N20L2

The IXTH60N20L2 from the Linear L2™ series provides 60A continuous current at 200V Vdss. This device is Active and ROHS3 compliant. The TO-247 package format differs from the original TO-3PN, requiring layout adaptation. Gate charge (255 nC) is elevated compared to the original specification, which may affect switching performance in high-frequency applications.

Not Recommended: 2SK1317-E

The 2SK1317-E manufactured by Renesas Electronics operates at 1500V Vdss with only 2.5A continuous current. This device is electrically incompatible with the FDA70N20 application requirements and is listed only for reference. The extreme voltage rating and minimal current capacity make this part unsuitable as a substitute.

Frequently Asked Questions (FAQ)

Q: Can the IXFH70N20Q3 directly replace the FDA70N20 without circuit modification?

A: The IXFH70N20Q3 provides electrical equivalence in terms of Vdss, Id, and Rds On characteristics. However, the package format differs (TO-247AD versus TO-3PN). PCB layout and mounting hardware must be adapted to accommodate the different pin configuration and thermal interface. Gate drive circuitry requires no modification.

Q: What is the significance of the TO-247 package format compared to TO-3PN?

A: Both are Through Hole packages suitable for high-current applications. TO-3PN (SC-65-3) and TO-247 formats differ in pin arrangement and mounting footprint. TO-247 devices typically offer improved thermal performance through enhanced lead design. Mechanical compatibility with existing PCB designs must be verified before substitution.

Q: Are the IXFH58N20 and IXFH50N20 suitable for designs requiring 70A continuous current?

A: No. These devices are rated for 58A and 50A respectively. Use of these parts in applications requiring 70A operation will result in device overstress and potential failure. Current derating analysis is required to determine if reduced current ratings are acceptable for specific circuit applications.

Q: How does gate charge affect substitution compatibility?

A: Gate charge (Qg) determines the energy required to switch the device. The FDA70N20 specifies 86 nC at 10V. The IXFH70N20Q3 specifies 67 nC, requiring less switching energy. The IXTH60N20L2 specifies 255 nC, requiring significantly more energy. Gate drive circuits must supply sufficient current to charge the gate within the required switching time. Existing drive circuits designed for 86 nC may require adjustment for parts with substantially different gate charge values.

Q: What is the impact of power dissipation differences between substitute parts?

A: The FDA70N20 is rated for 417W maximum power dissipation. The IXFH70N20Q3 is rated for 690W, providing thermal margin. The IXFH58N20 and IXFH50N20 are rated for 300W each. Thermal management design must account for the actual power dissipation in the application. Higher-rated devices provide design flexibility; lower-rated devices require verification that thermal limits are not exceeded.

Q: Is the 2SK1317-E a viable substitute option?

A: No. The 2SK1317-E operates at 1500V Vdss with 2.5A maximum current. This device is fundamentally incompatible with FDA70N20 applications. The extreme voltage rating and minimal current capacity make this part unsuitable. This device is listed in the original substitute list but does not meet substitution criteria.

Q: What compliance certifications should be verified for substitute parts?

A: All recommended substitute parts are ROHS3 compliant, matching the original FDA70N20 specification. REACH status varies: IXYS parts are REACH Unaffected; Renesas 2SK1317-E is REACH Affected. For applications subject to REACH regulations, IXYS substitutes are preferred. All parts carry EAR99 ECCN classification and 8541.29.0095 HTSUS code, consistent with the original device.

Q: Can multiple substitute parts be used interchangeably in production?

A: Substitution of different part numbers in production requires design validation and documentation. The IXFH70N20Q3 provides the closest electrical match and is recommended as the primary substitute. If production flexibility requires multiple sources, each substitute part must undergo thermal, electrical, and functional testing to confirm circuit performance. Design documentation must clearly specify which parts are approved for use.

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