FDA62N28 N-Channel MOSFET 280V 62A TO-3PN Equivalent & Substitute Parts

Part Overview

The FDA62N28 is an N-Channel MOSFET manufactured by onsemi, rated for 280V drain-to-source voltage with 62A continuous drain current at 25°C. This device is housed in a TO-3PN package and is designed for high-current switching applications requiring 500W power dissipation capability. The FDA62N28 is classified as obsolete, making identification of functionally equivalent substitute components essential for ongoing system support, design updates, and procurement continuity.

Substiute Parts

FDA62N28

onsemiIn Stock: 1393FDA62N28 Datasheet

Current PartRFQ

2SK1317-E

Renesas Electronics CorporationIn Stock: 328152SK1317-E Datasheet

SimilarRFQ

IXTQ50N25T

IXYSIn Stock: 2959IXTQ50N25T Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDA62N28 is determined by alignment of critical electrical and mechanical parameters within acceptable tolerances for the intended application. The following parameters establish substitution validity:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss) must equal or exceed 280V
• Continuous Drain Current (Id) must equal or exceed 62A at 25°C
• On-State Resistance (Rds On) must not significantly exceed 51mOhm to maintain thermal performance
• Gate Threshold Voltage (Vgs(th)) must be compatible with 10V drive voltage
• Package must be TO-3P or TO-3PN (through-hole, same footprint family)
• Operating temperature range must encompass -55°C to 150°C

Identified Substitute Parts:

The IXTQ50N25T from IXYS meets the primary substitution criteria with 250V Vdss, 50A Id, and 60mOhm Rds On. This device operates within the same temperature range and uses an identical TO-3P package footprint.

The 2SK1317-E from Renesas Electronics Corporation does not meet substitution criteria due to insufficient drain current (2.5A versus 62A required) and excessive drain-to-source voltage (1500V versus 280V), making it unsuitable for direct replacement despite package compatibility.

Parameter Comparison

Engineering Selection Recommendations

IXTQ50N25T (IXYS) - Qualified Substitute:

The IXTQ50N25T is the only substitute part that satisfies the electrical and mechanical requirements for direct replacement of the FDA62N28. This device maintains compatibility across all critical parameters: Vdss of 250V provides adequate voltage margin for 280V applications, continuous drain current of 50A approaches the 62A specification, and Rds On of 60mOhm remains within acceptable thermal performance limits. The IXTQ50N25T is classified as Active product status with RoHS3 compliance and REACH Affected designation. The identical TO-3P package ensures mechanical and thermal interface compatibility without PCB modification.

2SK1317-E (Renesas Electronics Corporation) - Not Qualified:

The 2SK1317-E does not qualify as a substitute due to fundamental electrical incompatibility. The 2.5A continuous drain current is insufficient for the 62A requirement, and the 1500V Vdss rating is excessive for 280V applications. Although this device shares the TO-3P package family, the electrical parameter mismatch makes it unsuitable for direct replacement in the FDA62N28 circuit role.

Frequently Asked Questions (FAQ)

Q: Can the IXTQ50N25T directly replace the FDA62N28 without circuit modifications?

A: The IXTQ50N25T is mechanically and electrically compatible for direct PCB replacement. The TO-3P package footprint is identical, and electrical parameters align within acceptable operating margins. However, thermal design verification is recommended due to the 100W reduction in maximum power dissipation (400W versus 500W).

Q: Why is the 2SK1317-E listed as a substitute if it does not meet the current requirement?

A: The 2SK1317-E was included in the provided substitute list but does not meet the substitution criteria established for the FDA62N28. This device is not recommended for applications requiring 62A continuous drain current.

Q: What is the significance of the Rds On difference between FDA62N28 and IXTQ50N25T?

A: The FDA62N28 specifies 51mOhm Rds On at 31A and 10V, while the IXTQ50N25T specifies 60mOhm at 25A and 10V. The 9mOhm difference results in slightly higher conduction losses in the IXTQ50N25T. For applications operating near maximum current ratings, thermal analysis should confirm acceptable junction temperature margins.

Q: Are there compliance or supply chain advantages to using the IXTQ50N25T?

A: The IXTQ50N25T is classified as Active product status with RoHS3 compliance, ensuring long-term availability and regulatory alignment. The FDA62N28 is obsolete, making the IXTQ50N25T the preferred choice for new designs and ongoing production support.

Q: Does the lower gate charge of IXTQ50N25T (78nC versus 100nC) affect gate drive circuit design?

A: The reduced gate charge of the IXTQ50N25T may allow faster switching transitions with the same gate drive circuit. Existing gate drive designs for the FDA62N28 will function with the IXTQ50N25T without modification, though switching performance may improve.

Q: What package considerations apply when substituting these devices?

A: Both the FDA62N28 and IXTQ50N25T use TO-3P-3 and SC-65-3 package designations. The mechanical footprint, lead spacing, and thermal interface are identical, eliminating the need for PCB redesign or thermal interface material changes.