FDA50N50 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDA50N50 is an N-Channel MOSFET manufactured by onsemi, rated for 500V drain-to-source voltage with 48A continuous drain current at 25°C. This device is housed in a TO-3PN package and is designed for high-voltage switching applications requiring substantial current handling capability. The FDA50N50 carries an Obsolete product status, necessitating identification of functionally equivalent alternatives for ongoing system support and new design considerations.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	48	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	105	mOhm @ 24A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	5	V @ 250µA
Gate Charge (Qg Max) @ Vgs	137	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	6460	pF @ 25V
Power Dissipation (Max)	625	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-3PN	Through Hole
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the FDA50N50 is determined by alignment of critical electrical parameters: drain-to-source voltage rating, continuous drain current capability, on-state resistance characteristics, and gate charge specifications. All substitute parts must maintain N-Channel MOSFET technology with through-hole mounting configurations. The substitution logic accommodates variations in package form factor (TO-3PN, TO-247-3, TO-3P) provided that thermal and electrical performance remain within acceptable operating margins for the target application.

Key Parameters Governing Substitution:

Drain-to-Source Voltage (Vdss): Minimum 500V
Continuous Drain Current (Id): Minimum 21A
On-State Resistance (Rds On): Maximum 158mOhm
Gate Charge (Qg): Maximum 137nC
Operating Temperature Range: -55°C to 150°C minimum
Mounting Type: Through Hole

Parameter Comparison

Parameter	FDA50N50 (Main)	NTHL099N60S5	RJK4518DPK-00#T0	STW28NM50N
Manufacturer	onsemi	onsemi	Renesas Electronics	STMicroelectronics
Drain-Source Voltage (Vdss)	500V	600V	450V	500V
Continuous Drain Current (Id) @ 25°C	48A (Tc)	33A (Tc)	39A (Ta)	21A (Tc)
Rds On (Max) @ Id, Vgs	105mOhm @ 24A, 10V	99mOhm @ 13.5A, 10V	130mOhm @ 19.5A, 10V	158mOhm @ 10.5A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	5V @ 250µA	4V @ 2.8mA	Not Specified	4V @ 250µA
Gate Charge (Qg Max) @ Vgs	137nC @ 10V	48nC @ 10V	93nC @ 10V	50nC @ 10V
Input Capacitance (Ciss Max) @ Vds	6460pF @ 25V	2500pF @ 400V	4100pF @ 25V	1735pF @ 25V
Power Dissipation (Max)	625W (Tc)	184W (Tc)	200W (Tc)	150W (Tc)
Operating Temperature Range	-55 to 150°C (TJ)	-55 to 150°C (TJ)	150°C (TJ)	150°C (TJ)
Package Type	TO-3PN	TO-247-3	TO-3P	TO-247-3
Product Status	Obsolete	Not For New Designs	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

NTHL099N60S5 (onsemi SuperFET® V)

The NTHL099N60S5 is an onsemi-manufactured substitute with 600V Vdss rating and 33A continuous drain current. This part carries a "Not For New Designs" status, indicating limited long-term availability. The device exhibits lower gate charge (48nC) and input capacitance (2500pF) compared to the FDA50N50, resulting in reduced switching losses. The TO-247-3 package provides improved thermal performance relative to TO-3PN. This substitute is suitable for legacy system maintenance where design modifications are constrained.

RJK4518DPK-00#T0 (Renesas Electronics)

The RJK4518DPK-00#T0 is manufactured by Renesas Electronics with 450V Vdss rating and 39A continuous drain current. This device maintains Active product status, ensuring ongoing availability and manufacturing support. The TO-3P package is mechanically compatible with TO-3PN footprints. On-state resistance is specified at 130mOhm, representing a 24% increase relative to the FDA50N50. This substitute is appropriate for applications where voltage margin below 500V is acceptable and long-term component availability is required.

STW28NM50N (STMicroelectronics MDmesh™ II)

The STW28NM50N is manufactured by STMicroelectronics with 500V Vdss rating matching the FDA50N50. This device carries Active product status with confirmed long-term availability. Continuous drain current is specified at 21A, representing a 56% reduction from the FDA50N50. Gate charge (50nC) and input capacitance (1735pF) are substantially lower, enabling faster switching operation. The TO-247-3 package requires PCB layout modification. This substitute is suitable for applications where current requirements do not exceed 21A and switching speed optimization is beneficial.

Frequently Asked Questions (FAQ)

Q: Can the NTHL099N60S5 directly replace the FDA50N50 in existing designs?

A: The NTHL099N60S5 provides electrical compatibility within the specified parameter ranges. However, the package transition from TO-3PN to TO-247-3 requires PCB layout modification. The "Not For New Designs" status indicates limited future availability, making this substitute appropriate only for legacy system support.

Q: What are the thermal implications of switching from FDA50N50 to STW28NM50N?

A: The STW28NM50N exhibits maximum power dissipation of 150W compared to 625W for the FDA50N50. Applications requiring continuous operation above 21A drain current will experience thermal limitations with this substitute. The TO-247-3 package provides superior thermal coupling to PCB compared to TO-3PN, partially offsetting the reduced power rating.

Q: Is the RJK4518DPK-00#T0 suitable for 500V applications?

A: The RJK4518DPK-00#T0 is rated for 450V maximum drain-to-source voltage. Applications requiring full 500V operation must employ either the NTHL099N60S5 (600V) or STW28NM50N (500V). The 450V rating provides 10% margin reduction relative to the FDA50N50 specification.

Q: What is the impact of gate charge differences on circuit design?

A: The FDA50N50 specifies 137nC gate charge, while substitutes range from 48nC to 93nC. Lower gate charge reduces driver circuit power dissipation and enables faster switching transitions. Gate driver circuits designed for the FDA50N50 will operate with reduced power consumption when driving lower gate charge devices, without requiring circuit modification.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed (NTHL099N60S5, RJK4518DPK-00#T0, STW28NM50N) maintain ROHS3 compliance status, matching the FDA50N50 environmental certification. All

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