FDA2712 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDA2712 is an N-Channel MOSFET manufactured by onsemi, rated for 250V drain-to-source voltage with 64A continuous drain current at 25°C. This device is packaged in a TO-3PN through-hole configuration and belongs to the UltraFET™ series. The FDA2712 is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support, production continuity, and system maintenance applications.

Key Parameters

Parameter	FDA2712 Specification
Drain-to-Source Voltage (Vdss)	250 V
Continuous Drain Current (Id) @ 25°C	64 A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	34 mOhm @ 40A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	5 V @ 250 µA
Gate Charge (Qg Max) @ Vgs	129 nC @ 10 V
Input Capacitance (Ciss Max) @ Vds	10175 pF @ 25 V
Power Dissipation (Max)	357 W (Tc)
Operating Temperature Range	-55°C to 150°C (TJ)
Package Type	TO-3PN (TO-3P-3, SC-65-3)
Mounting Type	Through Hole
Maximum Gate Voltage (Vgs Max)	±30 V

Substitute Part Grouping Explanation

Substitution of the FDA2712 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss) must equal or exceed 250V
Continuous Drain Current (Id) should be within acceptable operating range for the application
Gate Threshold Voltage (Vgs(th)) must be compatible with existing drive circuitry
On-State Resistance (Rds On) affects power dissipation and thermal performance
Gate Charge (Qg) influences switching speed and drive requirements
Maximum Gate Voltage (Vgs Max) must accommodate existing gate drive signals

Mechanical Compatibility Criteria:

Through-hole mounting requirement
Package footprint compatibility (TO-3P variants acceptable)
Thermal interface compatibility with existing heatsink designs

The three substitute parts listed below satisfy these criteria with varying degrees of parameter alignment and trade-offs in current rating, power dissipation, and package configuration.

Parameter Comparison

Parameter	FDA2712	IXTQ76N25T	IXFQ94N30P3	IRFP4332PBF
Manufacturer	onsemi	IXYS	IXYS	Infineon Technologies
Vdss (V)	250	250	300	250
Id @ 25°C (A)	64	76	94	57
Rds On Max @ Id, Vgs (mOhm)	34 @ 40A, 10V	39 @ 500mA, 10V	36 @ 47A, 10V	33 @ 35A, 10V
Vgs(th) Max @ Id (V)	5 @ 250µA	5 @ 1mA	5 @ 4mA	5 @ 250µA
Qg Max @ Vgs (nC)	129 @ 10V	92 @ 10V	102 @ 10V	150 @ 10V
Ciss Max @ Vds (pF)	10175 @ 25V	4500 @ 25V	5510 @ 25V	5860 @ 25V
Power Dissipation Max (W)	357	460	1040	360
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-40 to 175
Package	TO-3PN	TO-3P	TO-3P	TO-247AC
Product Status	Obsolete	Active	Active	Active
Vgs Max (V)	±30	±30	±20	±30

Engineering Selection Recommendations

IXTQ76N25T (IXYS)

The IXTQ76N25T provides the closest electrical match to the FDA2712 with identical 250V Vdss rating and higher continuous drain current (76A vs. 64A). Both devices share the same operating temperature range (-55°C to 150°C) and compatible gate voltage specifications (±30V). The TO-3P package is mechanically compatible with TO-3PN footprints. This part is active and RoHS3 compliant. The lower gate charge (92 nC vs. 129 nC) and reduced input capacitance (4500 pF vs. 10175 pF) may require gate drive circuit evaluation. This substitute is suitable for applications where higher current capability is beneficial.

IXFQ94N30P3 (IXYS)

The IXFQ94N30P3 offers the highest current rating (94A) and power dissipation capability (1040W) among the substitutes, with a higher voltage rating (300V vs. 250V). Both devices share identical operating temperature range and TO-3P package compatibility. This part is active and RoHS3 compliant. The higher Vdss provides additional design margin for voltage transients. Gate charge (102 nC) and input capacitance (5510 pF) are lower than the FDA2712, requiring gate drive verification. The maximum gate voltage specification (±20V vs. ±30V) must be confirmed compatible with existing drive circuits. This substitute is appropriate for applications requiring enhanced current and thermal performance.

IRFP4332PBF (Infineon Technologies)

The IRFP4332PBF maintains the 250V Vdss rating with slightly lower continuous drain current (57A vs. 64A). This part is active and RoHS3 compliant with an extended operating temperature range (-40°C to 175°C). The TO-247AC package differs from the TO-3PN, requiring mechanical redesign of the mounting interface and heatsink attachment. On-state resistance (33 mOhm) is comparable to the FDA2712. Gate charge (150 nC) is higher, potentially increasing switching losses. This substitute is suitable when the TO-247AC package footprint is acceptable and the lower current rating is adequate for the application.

Frequently Asked Questions (FAQ)

Q: Can the IXTQ76N25T directly replace the FDA2712 without circuit modifications?

A: The IXTQ76N25T is electrically compatible with the FDA2712 for the same 250V applications. Both devices have identical gate threshold voltage specifications and compatible gate voltage ratings (±30V). However, the lower gate charge (92 nC vs. 129 nC) and input capacitance (4500 pF vs. 10175 pF) may affect gate drive timing. Gate drive circuit verification is required to confirm switching performance remains within acceptable limits.

Q: What is the primary difference between the TO-3PN and TO-3P packages?

A: Both TO-3PN and TO-3P are through-hole power packages with identical lead configurations and thermal interface characteristics. The TO-3P designation is the standard industry nomenclature, while TO-3PN is a variant designation. Mechanical compatibility is maintained for heatsink mounting and PCB footprints designed for either variant.

Q: Why does the IXFQ94N30P3 have a higher voltage rating (300V) than the FDA2712 (250V)?

A: The IXFQ94N30P3 is designed for higher voltage applications. In circuits rated for 250V operation, the 300V rating provides additional safety margin against voltage transients and overshoot conditions. This does not create incompatibility; the device operates safely at 250V with improved reliability margins.

Q: Is the IRFP4332PBF package change from TO-3PN to TO-247AC a significant design consideration?

A: Yes. The TO-247AC package has a different footprint, lead spacing, and heatsink mounting interface compared to TO-3PN. PCB layout modifications and heatsink redesign are required. Thermal performance characteristics differ between packages, requiring thermal analysis for the specific application. This substitute is viable only when mechanical redesign is acceptable.

Q: How does gate charge affect device selection?

A: Gate charge (Qg) determines the energy required to switch the device on and off. The FDA2712 requires 129 nC at 10V, while substitutes range from 92 nC to 150 nC. Lower gate charge reduces switching losses and allows faster switching speeds with lower gate drive power. Higher gate charge increases switching losses and may require higher gate drive current. Gate drive circuit capability must be verified against the selected substitute's gate charge specification.

Q: Can all three substitutes be used interchangeably in the same application?

A: No. Each substitute has different electrical characteristics and package configurations. Selection depends on specific application requirements including current rating, thermal dissipation needs, switching frequency, and mechanical constraints. The IXTQ76N25T and IXFQ94N30P3 are mechanically compatible with TO-3P footprints. The IRFP4332PBF requires mechanical redesign due to its TO-247AC package. Electrical verification of gate drive compatibility is required for all substitutes.

Q: What compliance certifications are relevant for these substitutes?

A: All three substitute parts are RoHS3 compliant and REACH unaffected. All devices carry EAR99 export classification and HTSUS code 8541.29.0095. These certifications ensure regulatory compliance for industrial and commercial applications. The FDA2712, being obsolete, may have limited compliance documentation availability.

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