FDA24N50 N-Channel MOSFET 500V 24A Equivalent & Substitute Parts

Part Overview

The FDA24N50 is an N-Channel MOSFET rated for 500V drain-to-source voltage with 24A continuous drain current in a Through Hole TO-3PN package. This device is part of onsemi's UniFET™ series and is classified as Obsolete. Due to its obsolete status, equivalent and substitute parts are necessary for ongoing design support, production continuity, and system maintenance. Substitute devices must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating package variations.

Substiute Parts

FDA24N50

onsemiIn Stock: 23871FDA24N50 Datasheet

Current PartRFQ

FDA24N50F

onsemiIn Stock: 5509FDA24N50F Datasheet

MFR RecommendedRFQ

IXTQ30N50P

IXYSIn Stock: 6816IXTQ30N50P Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDA24N50 is determined by the following critical parameters:

Electrical Compatibility Requirements:

• Drain-to-Source Voltage (Vdss) must equal or exceed 500V
• Continuous Drain Current (Id) must equal or exceed 24A at 25°C
• On-State Resistance (Rds On) must not exceed the maximum specified value to ensure thermal performance
• Gate Threshold Voltage (Vgs(th)) must remain within acceptable switching characteristics
• Operating Temperature Range must encompass -55°C to 150°C

Mechanical Compatibility Requirements:

• Mounting Type: Through Hole (mandatory)
• Package Type: TO-3PN or compatible TO-3P variants (pin-compatible)

Compliance Requirements:

• RoHS3 Compliance (mandatory for new designs)
• REACH Unaffected status

Substitute parts are classified into two categories:

1. Manufacturer Recommended Equivalent (FDA24N50F): Identical electrical specifications with active product status and improved availability.

2. Similar Functional Substitute (IXTQ30N50P): Higher current rating (30A vs. 24A) and increased power dissipation capability (460W vs. 270W) with compatible voltage and package specifications.

Parameter Comparison

Engineering Selection Recommendations

FDA24N50F (Manufacturer Recommended Equivalent):

The FDA24N50F is the primary substitute for the obsolete FDA24N50. Both devices are manufactured by onsemi and share identical electrical specifications including 500V Vdss, 24A continuous drain current, and 270W power dissipation. The FDA24N50F carries Active product status, ensuring long-term availability and supply chain stability. The device maintains RoHS3 compliance and REACH Unaffected status. The only notable difference is a marginal increase in input capacitance (4310 pF vs. 4150 pF) and on-state resistance (200 mOhm vs. 190 mOhm), both within acceptable engineering tolerances. Packaging is identical (TO-3PN). This part is the direct replacement for new designs and production continuity.

IXTQ30N50P (Similar Functional Substitute):

The IXTQ30N50P from IXYS is a higher-performance alternative suitable for applications requiring increased current handling or thermal margin. This device maintains the same 500V Vdss rating and operating temperature range but provides 30A continuous drain current (25% higher than FDA24N50) and 460W power dissipation (70% higher). The on-state resistance is comparable (200 mOhm @ 15A vs. 190 mOhm @ 12A), and gate charge is lower (70 nC vs. 85 nC), resulting in faster switching characteristics. The package is TO-3P, which is pin-compatible with TO-3PN. The device is Active and RoHS3 compliant. This substitute is appropriate for designs where the original 24A specification provides insufficient margin or where thermal performance is critical.

Frequently Asked Questions (FAQ)

Q: Can FDA24N50F be used as a direct replacement for FDA24N50?

A: Yes. The FDA24N50F is the manufacturer-recommended equivalent with identical electrical specifications (500V, 24A, 270W) and package (TO-3PN). The only differences are minor variations in on-state resistance and input capacitance, which remain within acceptable tolerances. The FDA24N50F is Active and recommended for all new designs.

Q: What is the difference between TO-3PN and TO-3P packages?

A: Both TO-3PN and TO-3P are Through Hole packages with identical pin configurations and mechanical compatibility. The primary difference is in manufacturing process and lead material specifications. Devices in either package can be used interchangeably in circuit board layouts designed for TO-3P mounting.

Q: When should IXTQ30N50P be selected over FDA24N50F?

A: The IXTQ30N50P should be selected when the application requires higher current capacity (30A vs. 24A), increased power dissipation capability (460W vs. 270W), or faster switching performance (lower gate charge). This device is suitable for high-power applications or designs requiring thermal margin beyond the original 24A specification.

Q: Are all three devices RoHS3 compliant?

A: Yes. FDA24N50, FDA24N50F, and IXTQ30N50P are all RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.

Q: What is the impact of the higher on-state resistance in FDA24N50F?

A: The FDA24N50F has a maximum on-state resistance of 200 mOhm compared to 190 mOhm in the FDA24N50, measured at different current levels (12A vs. 12A). This 5% difference results in negligible additional power dissipation in typical applications and does not affect circuit functionality or thermal performance.

Q: Can FDA24N50 be used in new designs?

A: No. The FDA24N50 is classified as Obsolete and should not be used in new designs. The FDA24N50F is the recommended substitute for all new applications, offering identical performance with active product status and guaranteed long-term availability.

Q: What are the key electrical parameters that determine substitution compatibility?

A: The critical parameters are Drain-to-Source Voltage (Vdss ≥ 500V), Continuous Drain Current (Id ≥ 24A), On-State Resistance (Rds On), Gate Threshold Voltage (Vgs(th)), and Operating Temperature Range (-55°C to 150°C). All substitute parts must meet or exceed these specifications while maintaining Through Hole mounting and compatible package geometry.