FDA24N40F N-Channel MOSFET 400V 23A Equivalent & Substitute Parts

Part Overview

The FDA24N40F is an N-Channel MOSFET manufactured by onsemi, rated for 400V drain-to-source voltage and 23A continuous drain current in a Through Hole TO-3PN package. This device belongs to the UniFET™ series and is classified as Active product status. The FDA24N40F is designed for high-voltage switching applications requiring robust thermal performance with a maximum power dissipation of 235W.

Equivalent and substitute parts are identified when alternative components meet the same functional requirements within specified electrical and mechanical tolerances, enabling procurement flexibility, inventory optimization, and supply chain continuity.

Substiute Parts

FDA24N40F

onsemiIn Stock: 1768FDA24N40F Datasheet

Current PartRFQ

IXTQ36N50P

IXYSIn Stock: 3921IXTQ36N50P Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDA24N40F is determined by the following critical parameters:

Electrical Compatibility Criteria:

• FET Type: N-Channel topology must be maintained
• Technology: MOSFET (Metal Oxide) construction required
• Drain to Source Voltage (Vdss): Substitute must equal or exceed 400V
• Continuous Drain Current (Id): Substitute must equal or exceed 23A at 25°C
• Operating Temperature Range: Substitute must support -55°C to 150°C (TJ)
• RoHS and REACH Compliance: Substitute must maintain ROHS3 Compliant and REACH Unaffected status

Mechanical Compatibility Criteria:

• Mounting Type: Through Hole required
• Package Case: TO-3P-3 or SC-65-3 compatible packages

The IXTQ36N50P qualifies as a substitute based on superior electrical ratings (500V Vdss, 36A Id) while maintaining N-Channel MOSFET topology, Through Hole mounting, compatible package dimensions, and equivalent compliance certifications.

Parameter Comparison

Engineering Selection Recommendations

FDA24N40F Selection Criteria:

• Primary choice for applications requiring exactly 400V Vdss rating with 23A continuous drain current
• Suitable for designs with thermal management supporting 235W maximum power dissipation
• Active product status ensures ongoing manufacturer support and supply availability
• ROHS3 Compliant and REACH Unaffected certifications meet regulatory requirements

IXTQ36N50P Selection Criteria:

• Substitute for applications where higher voltage margin (500V Vdss) and increased current capacity (36A) provide design headroom
• Superior power dissipation capability (540W) accommodates higher thermal loads
• Active product status with equivalent compliance certifications (ROHS3 Compliant, REACH Unaffected)
• Compatible Through Hole TO-3P package enables direct mechanical substitution
• Higher gate charge (85 nC vs. 60 nC) requires gate driver evaluation for switching speed applications

Both parts maintain N-Channel MOSFET topology, identical operating temperature range (-55°C to 150°C), and compatible package dimensions. Selection between these parts depends on specific application voltage and current requirements within the design envelope.

Frequently Asked Questions (FAQ)

Q: Can the IXTQ36N50P directly replace the FDA24N40F in existing PCB designs?

A: Mechanical substitution is possible due to compatible TO-3P package dimensions (TO-3P-3, SC-65-3). However, electrical differences including higher Vdss (500V vs. 400V), increased Id (36A vs. 23A), and higher gate charge (85 nC vs. 60 nC) require circuit evaluation. Gate driver timing and thermal management must be reassessed for the substitute part.

Q: What are the key electrical differences between these parts?

A: The IXTQ36N50P provides higher voltage rating (500V vs. 400V), greater continuous current capacity (36A vs. 23A), lower on-resistance at specified test conditions (170 mOhm vs. 190 mOhm), and significantly higher power dissipation capability (540W vs. 235W). Gate charge is higher at 85 nC compared to 60 nC.

Q: Are both parts compliant with current regulatory standards?

A: Both the FDA24N40F and IXTQ36N50P are ROHS3 Compliant and REACH Unaffected, meeting current regulatory requirements for electronic component manufacturing and use.

Q: What mounting considerations apply to these Through Hole components?

A: Both parts use Through Hole mounting in compatible TO-3P package variants (TO-3P-3, SC-65-3). PCB hole patterns and thermal pad designs must accommodate the specific package dimensions. Thermal interface materials and heatsink mounting should be evaluated based on application power dissipation requirements.

Q: How do gate charge differences affect circuit design?

A: The IXTQ36N50P has higher gate charge (85 nC vs. 60 nC at 10V). This requires gate driver circuits capable of supplying adequate charge within the required switching time window. Applications with fast switching requirements or limited gate driver current capacity must evaluate this parameter.

Q: Can these parts be used interchangeably in high-voltage switching applications?

A: Interchangeability depends on specific application requirements. The FDA24N40F is rated for 400V applications, while the IXTQ36N50P supports 500V. The substitute part can be used in 400V designs with margin, but the FDA24N40F cannot be used in 500V applications. Thermal design and gate driver compatibility must be verified for either selection.