FDA16N50 N-Channel MOSFET 500V 16.5A Equivalent & Substitute Parts

Part Overview

The FDA16N50 is an N-Channel MOSFET manufactured by onsemi, rated for 500V drain-to-source voltage with 16.5A continuous drain current at 25°C. This device features a TO-3PN package configuration and is part of the UniFET™ series. The FDA16N50 is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating package and mounting considerations.

Key Parameters

Parameter	FDA16N50 Specification
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Continuous Drain Current (Id) @ 25°C	16.5A (Tc)
Drive Voltage (Max Rds On)	10V
Rds On (Max) @ Id, Vgs	380mOhm @ 8.3A, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Maximum Gate Voltage (Vgs)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1945 pF @ 25 V
Power Dissipation (Max)	205W (Tc)
Operating Temperature Range	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Product Status	Obsolete

Substitute Part Grouping Explanation

Substitute parts for the FDA16N50 are classified based on electrical parameter compatibility and package considerations. The primary substitution criteria are:

Critical Electrical Parameters:

Drain-to-Source Voltage (Vdss): Must equal or exceed 500V
Continuous Drain Current (Id): Must equal or exceed 16.5A at 25°C
Gate Drive Voltage: Must support 10V operation
On-State Resistance (Rds On): Must not significantly exceed 380mOhm at rated conditions
Operating Temperature Range: Must support -55°C to 150°C
Power Dissipation: Must support thermal requirements of the application

Package Compatibility:

Through-hole mounting required
TO-3P or TO-3PN package families acceptable
Physical footprint compatibility with TO-3P-3 or SC-65-3 case outlines

Substitutes are grouped into two categories: Direct Electrical Equivalents (matching all critical parameters within tolerance) and Functional Alternatives (meeting voltage and current requirements with package or thermal trade-offs).

Parameter Comparison

Parameter	FDA16N50	FDA16N50-F109	IXTQ450P2	STP14NM50N	2SK1317-E
Manufacturer	onsemi	Fairchild Semiconductor	IXYS	STMicroelectronics	Renesas Electronics
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	500	500	500	500	1500
Id @ 25°C (A)	16.5	16.5	16	12	2.5
Drive Voltage (V)	10	10	10	10	15
Rds On (Max) (mOhm)	380	380	330	320	12000
Rds On Test Conditions	@ 8.3A, 10V	@ 8.3A, 10V	@ 8A, 10V	@ 6A, 10V	@ 2A, 15V
Vgs(th) (Max) (V)	5	5	4.5	4	Not specified
Gate Charge Qg (Max) (nC)	45	45	43	27	Not specified
Vgs (Max) (±V)	30	30	30	25	20
Ciss (Max) (pF)	1945	1945	2530	816	990
Power Dissipation (Max) (W)	205	205	300	90	100
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	to 150
Package	TO-3PN	TO-3PN	TO-3P	TO-220	TO-3P
Product Status	Obsolete	Active	Active	Active	Active

Engineering Selection Recommendations

Direct Equivalent (Recommended Primary Substitute):

The FDA16N50-F109 manufactured by Fairchild Semiconductor is the direct electrical and mechanical equivalent to the FDA16N50. This part maintains identical specifications across all critical parameters: 500V Vdss, 16.5A continuous drain current, 380mOhm Rds On, and 205W power dissipation. The FDA16N50-F109 is classified as Active product status, ensuring long-term availability and supply chain continuity. Both parts share the TO-3PN package configuration and identical thermal characteristics. This substitute requires no circuit redesign or thermal management modifications.

High-Performance Alternative (Enhanced Thermal Capability):

The IXTQ450P2 manufactured by IXYS provides superior thermal performance with 300W maximum power dissipation compared to the FDA16N50's 205W rating. This device maintains 500V Vdss and delivers 16A continuous drain current, meeting the primary voltage and current requirements. The IXTQ450P2 features improved on-state resistance of 330mOhm and lower gate charge of 43nC, resulting in reduced switching losses. The TO-3P package is mechanically compatible with TO-3PN footprints. This substitute is suitable for applications requiring enhanced thermal headroom or improved efficiency. Product status is Active with RoHS3 compliance.

Current-Limited Alternative (Reduced Current Rating):

The STP14NM50N manufactured by STMicroelectronics is rated for 12A continuous drain current, representing a 27% reduction from the FDA16N50's 16.5A specification. This device maintains 500V Vdss and features improved on-state resistance of 320mOhm at lower current levels. Power dissipation is limited to 90W, requiring thermal design verification for applications demanding full 16.5A operation. The TO-220 package differs from the TO-3P family, requiring PCB layout modifications. This substitute is applicable only to designs with reduced current requirements or where thermal management can accommodate lower power ratings. Product status is Active with RoHS3 compliance.

Voltage-Elevated Alternative (Not Recommended for Direct Substitution):

The 2SK1317-E manufactured by Renesas Electronics Corporation is rated for 1500V Vdss with only 2.5A continuous drain current. This device is fundamentally incompatible with the FDA16N50 application due to severe current rating deficiency (85% reduction) and significantly elevated on-state resistance of 12Ohm. The 2SK1317-E is designed for high-voltage, low-current applications and does not serve as a functional substitute for the FDA16N50. This part is listed for reference only and should not be selected for FDA16N50 replacement.

Frequently Asked Questions (FAQ)

Q: Can the FDA16N50-F109 be used as a direct replacement without circuit modifications?

A: Yes. The FDA16N50-F109 is electrically and mechanically identical to the FDA16N50 across all specified parameters. No circuit redesign, gate drive modifications, or thermal management changes are required. The TO-3PN package footprint is identical, and the device operates within the same temperature range and voltage specifications.

Q: What is the primary advantage of selecting the IXTQ450P2 over the FDA16N50-F109?

A: The IXTQ450P2 provides 300W maximum power dissipation compared to 205W for the FDA16N50-F109, representing a 46% increase in thermal capacity. This enhanced rating reduces junction temperature rise in high-current or high-frequency switching applications. Additionally, the IXTQ450P2 features lower on-state resistance (330mOhm vs. 380mOhm) and reduced gate charge (43nC vs. 45nC), improving overall circuit efficiency.

Q: Is the STP14NM50N suitable for applications requiring 16.5A continuous current?

A: No. The STP14NM50N is rated for maximum 12A continuous drain current, which is 27% below the FDA16N50's 16.5A specification. Exceeding the rated current will cause excessive junction temperature rise and potential device failure. The STP14NM50N is applicable only to designs with reduced current requirements or where the application can operate reliably at 12A or lower.

Q: Why is the 2SK1317-E listed as a substitute if it cannot replace the FDA16N50?

A: The 2SK1317-E is included in the substitute list for reference and historical documentation purposes only. It shares the same N-Channel MOSFET technology and through-hole mounting type. However, the 2SK1317-E is designed for fundamentally different applications (high-voltage, low-current) and does not meet the current delivery requirements of the FDA16N50. This part should not be selected for FDA16N50 replacement.

Q: What package considerations apply when substituting the STP14NM50N?

A: The STP14NM50N uses a TO-220 package, which differs physically from the TO-3P and TO-3PN packages used by the FDA16N50 and other substitutes. The TO-220 package has a different pin configuration and mounting footprint, requiring PCB layout modifications. Thermal interface requirements may also differ due to the different package design. Mechanical compatibility must be verified before selection.

Q: Are all substitute parts RoHS3 compliant?

A: The FDA16N50-F109 compliance status is not specified in the provided data. The IXTQ450P2 and STP14NM50N are both RoHS3 compliant. The 2SK1317-E is ROHS3 compliant. Compliance verification should be confirmed with the specific manufacturer and distributor for the FDA16N50-F109 before procurement.

Q: What is the impact of different gate charge specifications on circuit design?

A: Gate charge (Qg) affects the gate drive circuit requirements and switching speed. The FDA16N50 specifies 45nC at 10V, while the IXTQ450P2 specifies 43nC and the STP14NM50N specifies 27nC. Lower gate charge reduces the energy required to switch the device and typically improves switching speed. However, existing gate drive circuits designed for the FDA16N50 will function with substitute parts having equal or lower gate charge specifications without modification.

Q: Can the FDA16N50 be used in applications where the 2SK1317-E is specified?

A: No. The FDA16N50 is rated for 500V Vdss, while the 2SK1317-E is rated for 1500V. Using the FDA16N50 in a 1500V application will result in device failure due to voltage overstress. These devices are designed for different voltage classes and are not interchangeable in either direction.

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