FCU900N60Z Equivalent & Substitute Parts

Part Overview

The FCU900N60Z is an N-Channel MOSFET manufactured by onsemi, rated for 600V drain-to-source voltage with 4.5A continuous drain current at 25°C. This device is packaged in a Through Hole I-PAK (TO-251-3) configuration and is part of the SuperFET® II series. The FCU900N60Z is designated as Last Time Buy, indicating that onsemi has discontinued this product line. Identifying equivalent and substitute parts is necessary to maintain design continuity and ensure long-term component availability for new production runs and field replacements.

Substiute Parts

FCU900N60Z
onsemiIn Stock: 22951FCU900N60Z Datasheet
FCU900N60Z
Current Part
STU6N60M2
STMicroelectronicsIn Stock: 1558STU6N60M2 Datasheet
STU6N60M2
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STU7N60M2
STMicroelectronicsIn Stock: 3185STU7N60M2 Datasheet
STU7N60M2
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STU7NM60N
STMicroelectronicsIn Stock: 88465STU7NM60N Datasheet
STU7NM60N
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STU9N60M2
STMicroelectronicsIn Stock: 1497STU9N60M2 Datasheet
STU9N60M2
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Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 4.5 A
On-State Resistance (Rds On) @ 2.3A, 10V 900 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 3.5 V
Gate Charge (Qg) @ 10V 17 nC
Power Dissipation (Max) 52 W
Operating Temperature Range -55 to 150 °C
Mounting Type Through Hole
Package TO-251-3 Stub Leads, IPak

Substitute Part Grouping Explanation

Substitution of the FCU900N60Z is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 600V
  • Continuous Drain Current (Id): Must equal or exceed 4.5A at 25°C
  • On-State Resistance (Rds On): Must not exceed the original specification to maintain thermal performance
  • Gate Threshold Voltage (Vgs(th)): Must be compatible with existing gate drive circuits
  • Operating Temperature Range: Must support -55°C to 150°C minimum

Mechanical Compatibility Criteria:

  • Mounting Type: Through Hole required
  • Package Type: TO-251 (IPAK) configuration required for pin compatibility

All substitute parts listed below meet or exceed these criteria and are manufactured by STMicroelectronics under the MDmesh™ II and MDmesh™ II Plus series. These devices maintain electrical and thermal performance characteristics suitable for direct replacement in applications designed for the FCU900N60Z.

Parameter Comparison

Parameter FCU900N60Z (onsemi) STU6N60M2 (STMicroelectronics) STU7N60M2 (STMicroelectronics) STU7NM60N (STMicroelectronics) STU9N60M2 (STMicroelectronics)
Vdss (V) 600 600 600 600 600
Id @ 25°C (A) 4.5 4.5 5.0 5.0 5.5
Rds On (mOhm) 900 @ 2.3A, 10V 1200 @ 2.25A, 10V 950 @ 2.5A, 10V 900 @ 2.5A, 10V 780 @ 3.0A, 10V
Vgs(th) @ 250µA (V) 3.5 4.0 4.0 4.0 4.0
Qg @ 10V (nC) 17 13.5 8.8 14 10
Power Dissipation (W) 52 60 60 45 60
Operating Temperature (°C) -55 to 150 -55 to 150 -55 to 150 150 150
Package TO-251-3 Stub Leads, IPak TO-251-3 Short Leads, IPak TO-251-3 Short Leads, IPak TO-251-3 Short Leads, IPak TO-251-3 Short Leads, IPak
Product Status Last Time Buy Active Active Active Active
RoHS Compliance ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute: STU7NM60N

The STU7NM60N is the recommended primary substitute for the FCU900N60Z. This device matches the on-state resistance specification (900 mOhm) and provides equivalent electrical performance across all critical parameters. The STU7NM60N is manufactured by STMicroelectronics under the active MDmesh™ II series and maintains full ROHS3 compliance. With 88,400 units in stock, this part offers superior long-term availability compared to the discontinued FCU900N60Z.

Secondary Substitutes: STU7N60M2 and STU9N60M2

The STU7N60M2 and STU9N60M2 are secondary alternatives that provide enhanced performance characteristics. Both devices are part of the active MDmesh™ II Plus series with higher power dissipation ratings (60W versus 52W). The STU7N60M2 offers 5A continuous drain current with 950 mOhm on-state resistance, while the STU9N60M2 provides 5.5A continuous drain current with 780 mOhm on-state resistance. These parts are suitable for applications where improved thermal headroom or lower conduction losses are beneficial.

Alternative Substitute: STU6N60M2

The STU6N60M2 maintains the 4.5A continuous drain current rating of the FCU900N60Z but exhibits higher on-state resistance (1200 mOhm). This part is suitable only for applications where the increased on-state resistance does not compromise thermal or efficiency requirements. The STU6N60M2 is part of the active MDmesh™ II Plus series and maintains full ROHS3 compliance.

All substitute parts are manufactured by STMicroelectronics, maintain TO-251 (IPAK) package compatibility, and support the full -55°C to 150°C operating temperature range required by the original design.

Frequently Asked Questions (FAQ)

Q: Can the STU7NM60N directly replace the FCU900N60Z without circuit modifications?

A: The STU7NM60N is electrically and mechanically compatible with the FCU900N60Z. Both devices share identical Vdss (600V), matching on-state resistance (900 mOhm), and equivalent gate threshold voltage specifications. The TO-251 (IPAK) package pinout is identical. Direct substitution is supported without circuit modifications.

Q: What is the difference between the STU7NM60N and STU7N60M2?

A: Both devices provide 5A continuous drain current and 600V Vdss rating. The primary differences are: STU7NM60N has 900 mOhm on-state resistance and 45W power dissipation (MDmesh™ II series), while STU7N60M2 has 950 mOhm on-state resistance and 60W power dissipation (MDmesh™ II Plus series). The STU7N60M2 offers higher power dissipation capability, making it suitable for applications requiring additional thermal margin.

Q: Why does the STU6N60M2 have higher on-state resistance than the FCU900N60Z?

A: The STU6N60M2 is rated at 1200 mOhm on-state resistance compared to the FCU900N60Z at 900 mOhm. This difference reflects different die designs and optimization priorities within the MDmesh™ II Plus series. The STU6N60M2 is suitable for applications where conduction losses are not critical to overall system performance.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The FCU900N60Z and all listed substitute parts (STU6N60M2, STU7N60M2, STU7NM60N, STU9N60M2) are ROHS3 compliant and REACH unaffected. All parts carry identical environmental compliance certifications.

Q: What is the significance of the TO-251 package lead style differences (Stub Leads versus Short Leads)?

A: The FCU900N60Z features TO-251-3 Stub Leads, while all STMicroelectronics substitutes feature TO-251-3 Short Leads. Both configurations maintain identical electrical and thermal performance. The lead style difference does not affect electrical compatibility or thermal characteristics. PCB layout and mechanical mounting considerations may require minor adjustments based on lead length, but electrical substitution is direct.

Q: Which substitute part offers the best thermal performance?

A: The STU9N60M2 provides the lowest on-state resistance (780 mOhm) and highest power dissipation rating (60W), resulting in the lowest conduction losses and best thermal performance. The STU7N60M2 and STU7NM60N also provide superior thermal characteristics compared to the FCU900N60Z due to their higher current ratings and optimized die designs.

Q: Is the STU7NM60N suitable for new production designs?

A: Yes. The STU7NM60N is manufactured by STMicroelectronics under the active MDmesh™ II series with 88,400 units currently in stock. This part is suitable for both replacement applications and new production designs requiring long-term component availability.

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