FCPF650N80Z N-Channel 800V 8A MOSFET Equivalent & Substitute Parts

Part Overview

The FCPF650N80Z is an N-Channel MOSFET manufactured by onsemi, rated for 800V drain-to-source voltage and 8A continuous drain current in a TO-220F-3 through-hole package. This device belongs to the SuperFET® II series and is classified as Not For New Designs, indicating it has been superseded in onsemi's product portfolio. The part is ROHS3 compliant and suitable for high-voltage switching applications requiring 30.5W maximum power dissipation.

Due to its obsolescence status, equivalent and substitute parts from active manufacturers provide viable alternatives for new designs and ongoing production requirements. Substitutes must maintain compatibility across critical electrical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance, while preserving the TO-220-3 through-hole package format.

Key Parameters

Parameter	Value	Unit	Condition
Drain-to-Source Voltage (Vdss)	800	V	Maximum rating
Continuous Drain Current (Id) @ 25°C	8	A	At Tc
On-Resistance (Rds On Max)	650	mOhm	@ 4A, 10V Vgs
Gate Threshold Voltage (Vgs(th) Max)	4.5	V	@ 800µA Id
Gate Charge (Qg Max)	35	nC	@ 10V Vgs
Maximum Gate Voltage	±20	V	Absolute maximum
Input Capacitance (Ciss Max)	1565	pF	@ 100V Vds
Power Dissipation (Max)	30.5	W	At Tc
Operating Temperature Range	-55 to 150	°C	Junction temperature
Package Type	TO-220-3	-	Through-hole
RoHS Status	ROHS3 Compliant	-	-

Substitute Part Grouping Explanation

Substitution of the FCPF650N80Z is determined by the following critical parameters:

Voltage Rating Compatibility: Substitute parts must have a Vdss rating equal to or greater than 800V to maintain voltage margin in the application circuit. Parts rated below 800V are not suitable for direct substitution.

Current Capacity: Continuous drain current (Id) must be sufficient to handle the 8A requirement. Parts with Id ratings of 7A or higher are acceptable, as thermal design and circuit protection can accommodate minor variations.

On-Resistance (Rds On): The 650mOhm specification at rated conditions is a critical performance parameter. Substitute parts with Rds On values at or below 650mOhm ensure equivalent or superior switching efficiency and heat dissipation characteristics.

Package Format: All substitutes must use the TO-220-3 through-hole package to ensure mechanical and thermal compatibility with existing PCB layouts and heatsink mounting arrangements.

Compliance Status: Substitute parts must maintain ROHS3 compliance and REACH unaffected status to satisfy regulatory requirements for new designs and production environments.

Operating Temperature Range: The -55°C to 150°C junction temperature range is required for applications demanding extended thermal operating margins.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Vgs(th) Max (V)	Qg Max (nC)	Power Diss. (W)	Temp Range (°C)	Status
FCPF650N80Z	onsemi	800	8	650	4.5	35	30.5	-55 to 150	Not For New Designs
AOTF11N62L	Alpha & Omega Semiconductor	620	11	650	4.5	37	39	-55 to 150	Active
IPA60R650CEXKSA1	Infineon Technologies	600	7	650	3.5	20.5	28	-40 to 150	Active
IPA65R650CEXKSA1	Infineon Technologies	650	7	650	3.5	23	28	-40 to 150	Active
IPA70R750P7SXKSA1	Infineon Technologies	700	6.5	750	3.5	8.3	21.2	-40 to 150	Last Time Buy
IPA80R750P7XKSA1	Infineon Technologies	800	7	750	3.5	17	27	-55 to 150	Active
IPAN60R650CEXKSA1	Infineon Technologies	600	9.9	650	3.5	20.5	28	-40 to 150	Active
IPAN65R650CEXKSA1	Infineon Technologies	650	10.1	650	3.5	23	28	-40 to 150	Active
R6007ENX	Rohm Semiconductor	600	7	620	4	20	40	-55 to 150	Active
R6007KNX	Rohm Semiconductor	600	7	620	5	14.5	46	-55 to 150	Active
R6008ANX	Rohm Semiconductor	600	8	800	4.5	21	50	-55 to 150	Not For New Designs

Engineering Selection Recommendations

Primary Substitute: IPA80R750P7XKSA1

The IPA80R750P7XKSA1 from Infineon Technologies is the most direct substitute for the FCPF650N80Z. This part maintains the 800V Vdss rating and -55°C to 150°C operating temperature range, ensuring full compatibility with applications designed for the original part. The device is Active status, confirming long-term availability and production support. ROHS3 compliance and REACH unaffected status satisfy regulatory requirements. The 750mOhm on-resistance represents a minor trade-off in switching efficiency, offset by superior gate charge characteristics (17nC versus 35nC) and lower power dissipation (27W versus 30.5W). The CoolMOS™ P7 series technology provides enhanced performance in high-voltage switching applications.

Secondary Substitute: IPAN65R650CEXKSA1

The IPAN65R650CEXKSA1 offers 650V Vdss rating with 10.1A continuous drain current, providing higher current capacity than the original part. This substitute is suitable for applications where voltage stress is not the limiting factor and where increased current headroom is beneficial. Active product status and ROHS3 compliance ensure production viability. The 650mOhm on-resistance matches the original specification exactly. Operating temperature range is -40°C to 150°C, which is acceptable for most industrial applications but does not extend to -55°C.

Tertiary Substitute: IPAN60R650CEXKSA1

The IPAN60R650CEXKSA1 provides 600V Vdss rating with 9.9A continuous drain current. This part is suitable for applications operating below 650V and requiring higher current capacity. Active status and ROHS3 compliance are confirmed. The 650mOhm on-resistance and 28W power dissipation provide equivalent thermal performance. Operating temperature range is -40°C to 150°C.

Alternative Substitutes with Voltage Derating:

Parts rated below 800V (AOTF11N62L, IPA65R650CEXKSA1, IPA60R650CEXKSA1, R6007ENX, R6007KNX, R6008ANX) are suitable only for applications where the circuit design permits voltage derating. These substitutes offer advantages in specific parameters such as higher current capacity or lower gate charge, but require circuit-level verification to confirm voltage margin adequacy.

Not Recommended:

IPA70R750P7SXKSA1 carries Last Time Buy status, indicating imminent discontinuation. This part should not be selected for new designs requiring long-term production support.

Frequently Asked Questions (FAQ)

Q: Can I use a substitute part rated at 650V instead of 800V in my application?

A: Substitution with lower voltage-rated parts requires circuit-level analysis to confirm adequate voltage margin. The original 800V rating provides design margin for transient overvoltages and switching spikes. Parts rated at 650V or 600V are acceptable only if the application circuit design ensures the device never experiences voltages exceeding the substitute part's Vdss rating under all operating conditions, including fault scenarios.

Q: What is the significance of on-resistance (Rds On) matching?

A: On-resistance directly determines switching losses and heat dissipation. The FCPF650N80Z specifies 650mOhm at 4A and 10V gate drive. Substitute parts with equal or lower Rds On values ensure equivalent or superior efficiency. Parts with higher Rds On (such as R6008ANX at 800mOhm) generate additional heat and may require thermal design modifications.

Q: Are all TO-220-3 packages mechanically identical?

A: While TO-220-3 packages share the same pin configuration and general dimensions, minor variations exist between manufacturers in lead thickness, package body height, and heatsink mounting surface finish. Physical verification is recommended when substituting between manufacturers, particularly for applications with tight mechanical tolerances or existing heatsink mounting hardware.

Q: Why do some substitutes have lower gate charge (Qg) than the original part?

A: Gate charge affects gate drive circuit requirements and switching speed. Lower gate charge (such as IPA80R750P7XKSA1 at 17nC versus FCPF650N80Z at 35nC) indicates faster switching transitions and reduced gate drive power consumption. This is generally advantageous and does not require circuit modification, as gate drive circuits designed for higher gate charge values operate correctly with lower values.

Q: What is the difference between Active and Not For New Designs product status?

A: Active status indicates the manufacturer continues production and provides long-term availability guarantees. Not For New Designs status indicates the part is in end-of-life phase, with limited production runs and no commitment to long-term supply. New designs should select Active status parts to ensure production continuity and technical support.

Q: Can I substitute a part with higher continuous drain current rating?

A: Yes. Parts with higher Id ratings (such as AOTF11N62L at 11A or IPAN65R650CEXKSA1 at 10.1A) provide additional current margin and are suitable substitutes for the 8A-rated FCPF650N80Z. Higher current capacity does not create compatibility issues and may improve thermal performance by reducing current density stress on the die.

Q: What does ROHS3 compliance mean for my application?

A: ROHS3 compliance certifies that the part contains no restricted substances (lead, cadmium, mercury, hexavalent chromium, polybrominated biphenyls, or polybrominated diphenyl ethers) above specified thresholds. This compliance is mandatory for products sold in the European Union and increasingly required by global customers. All recommended substitutes maintain ROHS3 compliance.

Q: How do I verify thermal compatibility when substituting parts?

A: Thermal compatibility is determined by power dissipation (Ptot) and on-resistance characteristics. The FCPF650N80Z dissipates 30.5W maximum. Substitute parts with equal or lower power dissipation (such as IPA80R750P7XKSA1 at 27W) provide equivalent or superior thermal performance. Parts with higher power dissipation require verification that existing heatsink and thermal design can accommodate the additional heat load.

Q: Are there any gate drive voltage differences I should consider?

A: The FCPF650N80Z specifies ±20V maximum gate voltage. Most substitutes (IPA80R750P7XKSA1, IPAN65R650CEXKSA1, R6007ENX, R6007KNX) also specify ±20V, ensuring compatibility with existing gate drive circuits. AOTF11N62L specifies ±30V, which is also compatible. Gate drive circuits designed for ±20V operate correctly with parts rated for ±30V.

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