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FCPF600N60Z N-Channel 600V 7.4A MOSFET Equivalent & Substitute Parts
Part Overview
The FCPF600N60Z is an N-Channel 600V 7.4A MOSFET manufactured by onsemi in the SuperFET® II series, housed in a TO-220F-3 through-hole package. This device is classified as obsolete, necessitating identification of active equivalent and substitute components for ongoing design support and procurement continuity. The part operates across a temperature range of -55°C to 150°C and dissipates up to 89W at the case temperature, making it suitable for high-power switching applications requiring 600V blocking capability.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 600 | V |
| Continuous Drain Current (Id) @ 25°C | 7.4 | A |
| Rds On (Max) @ Id, Vgs | 600 mOhm @ 3.7A, 10V | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ Id | 3.5 | V @ 250µA |
| Gate Charge (Qg) @ Vgs | 26 | nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1120 | pF @ 25V |
| Power Dissipation (Max) | 89 | W |
| Operating Temperature Range | -55 to 150 | °C |
| Package Type | TO-220-3 | Through Hole |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the FCPF600N60Z is determined by the following critical electrical and mechanical parameters:
Primary Substitution Criteria:
- Drain to Source Voltage (Vdss): 600V minimum
- Continuous Drain Current (Id): 7.4A or greater
- Package Type: TO-220 through-hole configuration
- Gate Drive Voltage: 10V nominal
- Operating Temperature Range: -55°C to 150°C preferred for full compatibility
- RoHS3 Compliance and REACH Unaffected status
Substitution Logic: Parts are grouped into two categories based on voltage rating alignment:
- 600V Rated Substitutes – Direct voltage class equivalents with drain current ratings at or above 7.4A, maintaining identical Vdss specification
- 800V Rated Substitutes – Higher voltage class devices that provide enhanced voltage margin while maintaining compatible current and thermal characteristics
All substitute parts listed maintain N-Channel MOSFET technology, TO-220 package family mounting, and active product status with current manufacturing availability.
Parameter Comparison
| Part Number | Manufacturer | Vdss (V) | Id @ 25°C (A) | Rds On (mOhm) | Qg (nC) | Power Diss. (W) | Temp Range (°C) | Package | Status |
|---|---|---|---|---|---|---|---|---|---|
| FCPF600N60Z | onsemi | 600 | 7.4 | 600 @ 3.7A, 10V | 26 @ 10V | 89 | -55 to 150 | TO-220F-3 | Obsolete |
| R6007ENX | Rohm Semiconductor | 600 | 7 | 620 @ 2.4A, 10V | 20 @ 10V | 40 | -0 to 150 | TO-220FM | Active |
| R6007KNX | Rohm Semiconductor | 600 | 7 | 620 @ 2.4A, 10V | 14.5 @ 10V | 46 | -55 to 150 | TO-220FM | Active |
| R6009ENX | Rohm Semiconductor | 600 | 9 | 535 @ 2.8A, 10V | 23 @ 10V | 40 | -0 to 150 | TO-220FM | Active |
| R6009KNX | Rohm Semiconductor | 600 | 9 | 535 @ 2.8A, 10V | 16.5 @ 10V | 48 | -55 to 150 | TO-220FM | Active |
| STF10N60M2 | STMicroelectronics | 600 | 7.5 | 600 @ 4A, 10V | 13.5 @ 10V | 25 | -55 to 150 | TO-220FP | Active |
| STF10NM60N | STMicroelectronics | 600 | 10 | 550 @ 4A, 10V | 19 @ 10V | 25 | -55 to 150 | TO-220FP | Active |
| STF10NM60ND | STMicroelectronics | 600 | 8 | 550 @ 4A, 10V | 19 @ 10V | 25 | -55 to 150 | TO-220FP | Active |
| STF11NM60ND | STMicroelectronics | 600 | 10 | 450 @ 5A, 10V | 30 @ 10V | 25 | -55 to 150 | TO-220FP | Active |
| STF14N80K5 | STMicroelectronics | 800 | 12 | 445 @ 6A, 10V | 22 @ 10V | 30 | -55 to 150 | TO-220FP | Active |
| STFU13N80K5 | STMicroelectronics | 800 | 12 | 450 @ 6A, 10V | 29 @ 10V | 35 | -55 to 150 | TO-220FP | Active |
Engineering Selection Recommendations
600V Voltage Class Substitutes (Direct Equivalents):
The STMicroelectronics MDmesh™ II and FDmesh™ II series devices (STF10N60M2, STF10NM60N, STF10NM60ND, STF11NM60ND) provide the closest functional equivalence to the FCPF600N60Z. These parts maintain 600V Vdss rating, deliver continuous drain currents of 7.5A to 10A, and operate across the full -55°C to 150°C temperature range. All are ROHS3 compliant and currently in active production status. The STF10NM60N offers the highest current rating (10A) with reduced on-resistance (550 mOhm), making it suitable for applications requiring improved thermal performance.
The Rohm Semiconductor R6007KNX and R6009KNX variants provide 600V equivalence with active status and full temperature range support (-55°C to 150°C). The R6009KNX delivers 9A continuous current with 535 mOhm on-resistance, offering current margin above the original 7.4A specification.
800V Voltage Class Substitutes (Enhanced Margin):
The STMicroelectronics MDmesh™ K5 series (STF14N80K5, STFU13N80K5) operate at 800V Vdss, providing 200V additional voltage margin. Both devices deliver 12A continuous current and maintain -55°C to 150°C operating range with ROHS3 compliance and active production status. These parts are applicable in designs where voltage stress margin enhancement is required or where circuit topology permits higher voltage rating utilization.
Compliance and Availability:
All recommended substitutes carry ROHS3 compliance, REACH Unaffected status, and EAR99 ECCN classification, matching the regulatory profile of the original FCPF600N60Z. Current inventory levels range from 1,584 to 45,924 units across the substitute options, ensuring procurement availability.
Frequently Asked Questions (FAQ)
Q: Can the R6007ENX or R6009ENX be used as direct replacements for the FCPF600N60Z?
A: The R6007ENX and R6009ENX are functionally compatible at the 600V voltage class and TO-220 package level. However, these Rohm parts specify an upper operating temperature limit of 150°C without a lower temperature specification, whereas the FCPF600N60Z operates from -55°C to 150°C. For applications requiring full -55°C to 150°C operation, the R6007KNX or R6009KNX variants are preferred, as they explicitly specify the complete temperature range.
Q: What is the difference between TO-220F-3, TO-220FM, and TO-220FP packages?
A: All three designations represent TO-220 through-hole package variants with three leads (drain, gate, source). The suffix letters (F, FM, FP) indicate manufacturer-specific package construction details and lead forming specifications. These variants are mechanically and electrically interchangeable in standard TO-220 footprints. Verification with PCB layout and mechanical assembly drawings is recommended to confirm lead spacing and mounting hole compatibility.
Q: Why are STF14N80K5 and STFU13N80K5 listed as substitutes if they have 800V rating instead of 600V?
A: The 800V-rated devices are listed as substitutes because they satisfy all critical electrical parameters: N-Channel MOSFET technology, TO-220 package, 10V gate drive, continuous current capability exceeding 7.4A, and full -55°C to 150°C operation. The higher voltage rating provides additional design margin and is compatible with 600V circuit topologies. Selection of 800V devices is appropriate when voltage stress reduction or enhanced reliability margin is a design objective.
Q: Are there thermal performance differences between the FCPF600N60Z and the STMicroelectronics substitutes?
A: The FCPF600N60Z specifies 89W maximum power dissipation at case temperature. The STMicroelectronics MDmesh™ II and FDmesh™ II series specify 25W maximum power dissipation, indicating improved thermal efficiency. This difference reflects advances in MOSFET technology and lower on-resistance values. For applications operating near the original 89W dissipation level, thermal analysis is required to confirm that the substitute device's thermal characteristics remain adequate for the specific circuit design.
Q: What is the significance of Gate Charge (Qg) differences between substitute parts?
A: Gate Charge values range from 13.5 nC (STF10N60M2) to 30 nC (STF11NM60ND) across the substitute options, compared to 26 nC for the FCPF600N60Z. Lower gate charge reduces gate drive power requirements and enables faster switching transitions. Higher gate charge may require increased gate drive current or extended switching times. Gate charge selection should be evaluated against the specific gate driver circuit design and switching frequency requirements of the application.
Q: Can the FCPF600N60Z be replaced with a lower-current device such as the R6007ENX (7A) in a 7.4A application?
A: The R6007ENX specifies 7A continuous drain current, which is below the original 7.4A specification. This substitution introduces current margin reduction and is not recommended for applications operating at or near the 7.4A level. The R6009ENX or R6009KNX (9A rating) or STMicroelectronics devices (7.5A to 10A rating) provide adequate current margin and are preferred for direct replacement in 7.4A applications.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All substitute parts listed in this reference carry ROHS3 Compliant status and REACH Unaffected classification, matching the regulatory compliance profile of the FCPF600N60Z. This ensures compatibility with procurement and environmental compliance requirements.
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