FCPF290N80 N-Channel MOSFET 800V 17A Equivalent & Substitute Parts

Part Overview

The FCPF290N80 is an N-Channel MOSFET manufactured by onsemi, rated for 800V drain-to-source voltage with 17A continuous drain current at 25°C. This device features a TO-220F-3 through-hole package and is part of the PowerTrench® series. The part is classified as "Not For New Designs," indicating it has been superseded in onsemi's product roadmap. Identifying equivalent and substitute parts is necessary for applications requiring continued supply, design flexibility, or performance optimization within compatible electrical and mechanical parameters.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	17	A
On-State Resistance (Rds On Max) @ Id, Vgs	290 mOhm @ 8.5A, 10V	mOhm
Gate-Source Voltage (Vgs Max)	±20	V
Power Dissipation (Max)	40	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-220-3 Full Pack	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the FCPF290N80 is determined by the following critical parameters:

Primary Substitution Criteria:

FET Type: N-Channel (all substitutes must be N-Channel)
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package Family: TO-220 variants (TO-220F, TO-220FM, TO-220-FP)
Drain-to-Source Voltage (Vdss): 600V to 800V range
Continuous Drain Current (Id): 13.8A to 17A minimum
On-State Resistance (Rds On): 230 mOhm to 290 mOhm
Gate-Source Voltage (Vgs Max): ±20V or higher
Operating Temperature: -55°C to 150°C minimum

Substitution Logic: The FCPF290N80 operates at 800V with 17A continuous current. Substitute parts are grouped into two categories:

Direct Voltage Class Substitutes (600V–650V): Parts with lower Vdss ratings (R6015ENX, R6015KNX, AOTF15S65L, IPA65R280E6XKSA1) are suitable for applications where the full 800V rating is not required. These parts maintain comparable current ratings and on-state resistance characteristics.
Lower Voltage, Lower Current Substitutes (600V–650V, 13.8A–15A): Parts such as IPA60R230P6XKSA1 and IPA65R280E6XKSA1 provide reduced power dissipation and gate charge, beneficial for applications with lower current demands or thermal constraints.

All substitute parts comply with RoHS3 and REACH requirements, matching the main part's regulatory status.

Parameter Comparison

Parameter	FCPF290N80 (Main)	R6015ENX	R6015KNX	AOTF15S65L	IPA60R230P6XKSA1	IPA65R280E6XKSA1
Manufacturer	onsemi	Rohm Semiconductor	Rohm Semiconductor	Alpha & Omega Semiconductor Inc.	Infineon Technologies	Infineon Technologies
Vdss (V)	800	600	600	650	600	650
Id @ 25°C (A)	17	15	15	15	16.8	13.8
Rds On Max (mOhm)	290 @ 8.5A, 10V	290 @ 6.5A, 10V	290 @ 6.5A, 10V	290 @ 7.5A, 10V	230 @ 6.4A, 10V	280 @ 4.4A, 10V
Vgs Max (V)	±20	±20	±20	±30	±20	±20
Power Dissipation Max (W)	40	40	60	34	33	32
Operating Temperature (°C)	-55 to 150	to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220F-3	TO-220FM	TO-220FM	TO-220F	PG-TO220-FP	PG-TO220-FP
Product Status	Not For New Designs	Active	Active	Active	Active	Not For New Designs
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

For Applications Requiring 800V Voltage Rating: No direct substitute with identical 800V rating is available in the provided substitute list. The FCPF290N80 remains the only option for circuits requiring the full 800V drain-to-source voltage specification.

For Applications Operating Below 650V: The R6015KNX (Rohm Semiconductor) is recommended as the primary substitute. It maintains the same 290 mOhm on-state resistance, 15A continuous current, and 40W power dissipation as the main part. The R6015KNX is classified as Active, ensuring continued availability and supply chain stability. Operating temperature range matches the FCPF290N80 (-55°C to 150°C).

For Applications Operating Below 600V with Current Demand Below 17A: The R6015ENX (Rohm Semiconductor) provides equivalent electrical characteristics with Active product status. The IPA60R230P6XKSA1 (Infineon Technologies) offers superior on-state resistance (230 mOhm) and is classified as Active, making it suitable for designs prioritizing lower conduction losses.

For Thermal-Constrained Applications: The AOTF15S65L (Alpha & Omega Semiconductor Inc.) and IPA65R280E6XKSA1 (Infineon Technologies) feature reduced power dissipation (34W and 32W respectively) compared to the main part (40W). Both are suitable for applications where thermal management is a limiting factor.

Regulatory and Compliance Considerations: All substitute parts are RoHS3 compliant and REACH unaffected, matching the main part's regulatory status. Parts classified as Active (R6015ENX, R6015KNX, AOTF15S65L, IPA60R230P6XKSA1) are recommended for new designs requiring long-term supply assurance.

Frequently Asked Questions (FAQ)

Q: Can the FCPF290N80 be replaced with a 600V-rated MOSFET in an 800V application?

A: No. Substituting an 800V-rated device with a 600V-rated device in an application designed for 800V operation will result in device failure or destruction. The drain-to-source voltage rating must equal or exceed the maximum voltage the device will experience in the circuit.

Q: What is the difference between TO-220F, TO-220FM, and PG-TO220-FP packages?

A: All three are through-hole TO-220 variants with identical pin configurations and mechanical compatibility. TO-220F and TO-220FM differ in lead frame material and thermal characteristics. PG-TO220-FP is Infineon's variant designation. All are mechanically interchangeable in standard TO-220 footprints.

Q: Why is the FCPF290N80 marked "Not For New Designs"?

A: This designation indicates the part has been superseded by newer technology or is being phased out by the manufacturer. For new designs, Active-status alternatives such as R6015KNX or IPA60R230P6XKSA1 are recommended to ensure long-term supply availability and access to manufacturer support.

Q: Can I use a substitute part with lower on-state resistance (Rds On)?

A: Yes. A lower Rds On value (such as 230 mOhm in the IPA60R230P6XKSA1 versus 290 mOhm in the FCPF290N80) reduces conduction losses and heat generation. This is a beneficial substitution provided all other electrical parameters (voltage, current, temperature) are compatible with the application.

Q: Are all substitute parts available in the same quantities as the main part?

A: No. Inventory levels vary by manufacturer and distributor. The FCPF290N80 has 7,836 pieces in stock, while substitutes range from 1,139 to 29,299 pieces. R6015KNX and R6015ENX (Rohm Semiconductor) show the highest inventory availability at 21,116 and 29,299 pieces respectively.

Q: What is Gate Charge (Qg) and why does it vary among substitutes?

A: Gate Charge is the total charge required to switch the MOSFET from off to on state. Lower gate charge (such as 17.2 nC in AOTF15S65L) results in faster switching and lower gate drive power requirements. Higher gate charge (such as 75 nC in the main part) may require more robust gate drive circuitry but can provide improved noise immunity.

Q: Can I use a substitute with a higher Vgs(Max) rating?

A: Yes. The AOTF15S65L features Vgs(Max) of ±30V compared to ±20V in the FCPF290N80. A higher gate-source voltage rating provides additional safety margin and is a compatible substitution, provided the gate drive circuit does not exceed ±20V.

Q: What does "ROHS3 Compliant" mean for component selection?

A: RoHS3 (Restriction of Hazardous Substances Directive 3) compliance certifies that the component contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls, or polybrominated diphenyl ethers above specified thresholds. All listed parts are RoHS3 compliant, ensuring compatibility with environmental regulations and customer requirements.

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