FCP7N60 N-Channel 600V 7A MOSFET Equivalent & Substitute Parts

Part Overview

The FCP7N60 is an N-Channel 600V 7A MOSFET manufactured by onsemi in the SuperFET™ series, housed in a TO-220-3 through-hole package. This device is rated for 83W power dissipation and operates across the temperature range of -55°C to 150°C. The part is currently classified as "Not For New Designs," making identification of functionally equivalent alternatives essential for ongoing system support and new design implementations.

Substitute parts must maintain electrical compatibility across critical parameters including drain-source voltage rating, continuous drain current capability, on-state resistance characteristics, and gate charge specifications, while preserving the through-hole TO-220-3 package format.

Key Parameters

Parameter	FCP7N60 Value	Unit	Substitution Relevance
Drain to Source Voltage (Vdss)	600	V	Critical - Minimum voltage rating required
Continuous Drain Current (Id) @ 25°C	7	A (Tc)	Critical - Minimum current capability required
Rds On (Max) @ Id, Vgs	600 mOhm @ 3.5A, 10V	mOhm	Important - On-state resistance affects efficiency
Gate Charge (Qg) (Max) @ Vgs	30	nC @ 10V	Important - Switching speed and drive requirements
Vgs(th) (Max) @ Id	5	V @ 250µA	Important - Gate threshold voltage
Power Dissipation (Max)	83	W (Tc)	Important - Thermal management capability
Operating Temperature Range	-55 to 150	°C (TJ)	Important - Environmental compatibility
Package / Case	TO-220-3	—	Critical - Physical and thermal interface
Mounting Type	Through Hole	—	Critical - PCB assembly compatibility

Substitute Part Grouping Explanation

Substitute parts are grouped based on strict adherence to the following electrical and mechanical criteria:

Primary Substitution Criteria (Must Meet All):

Drain-Source Voltage (Vdss) ≥ 600V
Continuous Drain Current (Id) ≥ 7A at 25°C
Package: TO-220-3 through-hole configuration
Operating Temperature Range: -55°C to 150°C minimum
RoHS3 Compliance and REACH Unaffected status

Secondary Compatibility Factors:

On-state resistance (Rds On) characteristics at specified gate voltage
Gate charge (Qg) for switching performance alignment
Gate threshold voltage (Vgs(th)) for drive circuit compatibility
Input capacitance (Ciss) for gate drive circuit design

Parts are organized into three categories based on how their electrical parameters relate to the FCP7N60 baseline:

Category A - Direct Equivalents (600V Rating, 7A+ Current): Parts with 600V Vdss and current ratings at or above 7A, maintaining similar on-state resistance and gate charge profiles.

Category B - Higher Current Capability (600V Rating, >7A Current): Parts with 600V Vdss but higher continuous drain current ratings, offering improved current handling with comparable or better on-state resistance.

Category C - Higher Voltage Rating (>600V Vdss, 7A+ Current): Parts with voltage ratings exceeding 600V, suitable for applications requiring additional voltage margin while maintaining or exceeding current capability.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Vgs(th) (V)	Power Diss. (W)	Package	Status
FCP7N60	onsemi	600	7	600 @ 3.5A, 10V	30 @ 10V	5 @ 250µA	83	TO-220-3	Not For New Designs
IXFP14N60P	IXYS	600	14	550 @ 7A, 10V	36 @ 10V	5.5 @ 2.5mA	300	TO-220-3	Active
IXFP16N60P3	IXYS	600	16	470 @ 500mA, 10V	36 @ 10V	5 @ 1.5mA	347	TO-220-3	Active
IXFP8N65X2	IXYS	650	8	450 @ 4A, 10V	11 @ 10V	5 @ 250µA	150	TO-220-3	Active
IXTP8N70X2	IXYS	700	8	500 @ 500mA, 10V	12 @ 10V	5 @ 250µA	150	TO-220-3	Active
IXTP8N70X2M	IXYS	700	4	550 @ 500mA, 10V	12 @ 10V	5 @ 250µA	32	TO-220 Isolated Tab	Active
SPP07N60C3XKSA1	Infineon Technologies	650	7.3	600 @ 4.6A, 10V	27 @ 10V	3.9 @ 350µA	83	TO-220-3	Active
STP10N60M2	STMicroelectronics	600	7.5	600 @ 3A, 10V	13.5 @ 10V	4 @ 250µA	85	TO-220-3	Active
STP10NM60N	STMicroelectronics	600	10	550 @ 4A, 10V	19 @ 10V	4 @ 250µA	70	TO-220-3	Active
STP13N80K5	STMicroelectronics	800	12	450 @ 6A, 10V	29 @ 10V	5 @ 100µA	190	TO-220-3	Active
STP13NK60Z	STMicroelectronics	600	13	550 @ 4.5A, 10V	92 @ 10V	4.5 @ 100µA	150	TO-220-3	Active

Engineering Selection Recommendations

For Direct Replacement in Existing Designs:

The SPP07N60C3XKSA1 (Infineon Technologies CoolMOS™) and STP10N60M2 (STMicroelectronics MDmesh™ II Plus) are the closest functional equivalents to the FCP7N60. Both parts maintain 600V Vdss rating, deliver 7.3A and 7.5A continuous drain current respectively, and are housed in TO-220-3 packages. Both are Active products with full RoHS3 compliance and REACH Unaffected status. The SPP07N60C3XKSA1 matches the 83W power dissipation specification exactly, while the STP10N60M2 provides 85W capability. Gate charge specifications differ slightly (27 nC and 13.5 nC respectively versus 30 nC for the FCP7N60), requiring verification of gate drive circuit compatibility.

For Applications Requiring Higher Current Capacity:

The IXFP14N60P and IXFP16N60P3 (IXYS HiPerFET™ series) maintain the 600V Vdss rating while providing 14A and 16A continuous drain current respectively. Both are Active products in TO-220-3 packages with full compliance certifications. These parts offer improved on-state resistance (550 mOhm and 470 mOhm respectively) and significantly higher power dissipation ratings (300W and 347W), making them suitable for applications where the original 7A specification represents a design margin constraint.

For Applications Requiring Voltage Margin:

The IXFP8N65X2 (650V, 8A) and IXTP8N70X2 (700V, 8A) provide higher voltage ratings while maintaining comparable current capability. The IXFP8N65X2 offers improved on-state resistance (450 mOhm) and significantly reduced gate charge (11 nC), beneficial for high-frequency switching applications. The IXTP8N70X2 provides the highest voltage rating (700V) with similar current and power dissipation characteristics. Both are Active products with full compliance certifications.

For High-Voltage Applications:

The STP13N80K5 (STMicroelectronics SuperMESH5™) provides 800V Vdss with 12A continuous drain current and 190W power dissipation. This part is suitable for applications requiring substantial voltage margin above the 600V specification while maintaining current capability well above the 7A baseline.

All recommended substitutes are Active products with RoHS3 compliance and REACH Unaffected status, ensuring regulatory compliance and long-term availability.

Frequently Asked Questions (FAQ)

Q: Can I use a substitute part with higher Vdss rating in place of the FCP7N60?

A: Yes. A higher Vdss rating is backward compatible with applications designed for 600V. Parts such as the IXFP8N65X2 (650V), IXTP8N70X2 (700V), and STP13N80K5 (800V) can be used in 600V applications. The higher voltage rating provides additional safety margin and does not degrade performance in lower-voltage circuits. However, verify that gate drive circuits and PCB layout accommodate any differences in gate charge or input capacitance specifications.

Q: What is the minimum continuous drain current rating I should select as a substitute?

A: The substitute part must have a continuous drain current (Id) rating of at least 7A at 25°C to meet the FCP7N60 specification. Parts with higher current ratings (such as 10A, 14A, or 16A) are acceptable and provide design margin. Lower current ratings are not suitable.

Q: Are all substitute parts compatible with the same PCB footprint?

A: All recommended substitutes use the TO-220-3 through-hole package, which shares the same physical footprint and pin configuration as the FCP7N60. The exception is the IXTP8N70X2M, which uses a TO-220 Isolated Tab variant. Verify PCB layout compatibility before substitution, particularly regarding thermal pad connections and isolation requirements.

Q: How do differences in gate charge (Qg) affect substitution?

A: Gate charge determines the energy required to switch the transistor and influences switching speed. The FCP7N60 specifies 30 nC at 10V. Substitutes with lower gate charge (such as IXFP8N65X2 at 11 nC or STP10N60M2 at 13.5 nC) require less gate drive energy and switch faster, potentially improving efficiency. Substitutes with higher gate charge (such as STP13NK60Z at 92 nC) require more gate drive energy. Verify that the gate drive circuit can supply the required charge within the intended switching frequency.

Q: What is the significance of on-state resistance (Rds On) differences?

A: On-state resistance directly affects power dissipation and efficiency during conduction. The FCP7N60 specifies 600 mOhm at 3.5A and 10V gate voltage. Substitutes with lower Rds On values (such as IXFP16N60P3 at 470 mOhm or IXFP8N65X2 at 450 mOhm) dissipate less power and generate less heat. Substitutes with similar or slightly higher Rds On values are acceptable if thermal management is adequate. Compare Rds On specifications at the same gate voltage (10V) and similar current levels for accurate comparison.

Q: Can I use a substitute part with a lower power dissipation rating?

A: No. The substitute part must have a power dissipation rating equal to or greater than the FCP7N60 specification of 83W. Parts with lower power dissipation ratings (such as IXTP8N70X2M at 32W) are not suitable for direct replacement. Higher power dissipation ratings provide improved thermal capability and design margin.

Q: What compliance certifications should I verify before substitution?

A: All recommended substitutes are RoHS3 compliant and REACH Unaffected, matching the FCP7N60 certifications. Verify these certifications in the substitute part's datasheet before procurement. Additionally, confirm that the substitute part is classified as "Active" product status to ensure long-term availability and manufacturer support.

Q: How do I determine if a substitute part's gate threshold voltage (Vgs(th)) is compatible?

A: Gate threshold voltage determines the minimum gate voltage required to turn the transistor on. The FCP7N60 specifies 5V at 250µA. Substitute parts with similar or lower Vgs(th) values are compatible with existing gate drive circuits. Parts with significantly higher Vgs(th) values may require gate drive circuit modifications. Compare Vgs(th) specifications at the same test current level for accurate evaluation.

Q: Are there any thermal considerations when substituting parts with different power dissipation ratings?

A: Yes. Parts with higher power dissipation ratings (such as IXFP14N60P at 300W or IXFP16N60P3 at 347W) generate more heat under identical operating conditions if on-state resistance is lower. Verify that the PCB thermal design, heatsink, and thermal interface materials can accommodate the substitute part's power dissipation. Conversely, parts with lower power dissipation ratings may require reduced operating current or improved thermal management.

Q: Can I substitute the FCP7N60 with a part rated for lower continuous drain current?

A: No. The substitute part must have a continuous drain current rating of at least 7A at 25°C. Parts with lower current ratings do not meet the electrical specification and are not suitable for direct replacement.

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