FCP650N80Z Equivalent & Substitute Parts

Part Overview

The FCP650N80Z is an N-Channel MOSFET manufactured by onsemi, rated for 800V drain-to-source voltage with 10A continuous drain current at 25°C. This device is housed in a TO-220-3 through-hole package and is part of the SuperFET® II series. The part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity. Substitute parts must maintain electrical compatibility within the specified parameter ranges while accommodating the through-hole TO-220 package format.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	10	A
On-State Resistance (Rds On Max) @ Id, Vgs	650 mOhm @ 4A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4.5	V @ 800µA
Gate Charge (Qg Max) @ Vgs	35	nC @ 10V
Power Dissipation (Max)	162	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	Through Hole
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the FCP650N80Z are evaluated based on the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 800V
Continuous Drain Current (Id): Must equal or exceed 10A at 25°C
Package Type: Must be TO-220-3 through-hole configuration
FET Type: Must be N-Channel MOSFET
Operating Temperature Range: Must span -55°C to 150°C minimum
RoHS Compliance: Must maintain ROHS3 compliance status

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation Rating: Higher ratings provide thermal margin
Product Status: Active or Not For New Designs status indicates availability

The FCP400N80Z qualifies as a manufacturer-recommended substitute, offering superior electrical performance with higher current rating (14A vs. 10A) and lower on-state resistance (400 mOhm vs. 650 mOhm) while maintaining identical voltage rating and package configuration.

The IXTP10N60P qualifies as a similar alternative from IXYS, maintaining matched current rating (10A) and package type, though with reduced voltage rating (600V vs. 800V) and higher on-state resistance (740 mOhm vs. 650 mOhm).

Parameter Comparison

Parameter	FCP650N80Z (Main)	FCP400N80Z (MFR Recommended)	IXTP10N60P (Similar)
Manufacturer	onsemi	onsemi	IXYS
FET Type	N-Channel	N-Channel	N-Channel
Vdss (V)	800	800	600
Id @ 25°C (A)	10	14	10
Rds On Max (mOhm)	650 @ 4A, 10V	400 @ 5.5A, 10V	740 @ 5A, 10V
Vgs(th) Max (V)	4.5 @ 800µA	4.5 @ 1.1mA	5.5 @ 250µA
Qg Max (nC)	35 @ 10V	56 @ 10V	32 @ 10V
Power Dissipation Max (W)	162	195	200
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Not For New Designs	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

FCP400N80Z (onsemi) — Manufacturer-Recommended Substitute

The FCP400N80Z is the primary substitute option. It maintains the identical 800V voltage rating and TO-220-3 package configuration as the FCP650N80Z. The FCP400N80Z provides enhanced electrical performance with 14A continuous drain current (40% higher than the original 10A specification) and significantly lower on-state resistance of 400 mOhm compared to 650 mOhm. Both devices are onsemi SuperFET® II series components with matching operating temperature ranges and ROHS3 compliance. The FCP400N80Z is classified as "Not For New Designs," indicating limited future availability but current stock presence (2600 units). This substitute is suitable for direct replacement in existing designs where the enhanced current capacity and reduced on-state resistance provide performance margin.

IXTP10N60P (IXYS) — Alternative Substitute

The IXTP10N60P from IXYS serves as an alternative substitute when FCP400N80Z availability is constrained. This device maintains the 10A continuous drain current rating and TO-220-3 package format of the original FCP650N80Z. However, the IXTP10N60P operates at a reduced maximum voltage of 600V compared to the 800V specification of the FCP650N80Z. The on-state resistance is higher at 740 mOhm versus 650 mOhm. The IXTP10N60P carries an Active product status, indicating ongoing manufacturer support and availability (1110 units in stock). This substitute is applicable only in applications where the 800V voltage rating is not a critical design requirement and where the 600V maximum voltage provides sufficient margin for the intended circuit operation.

Frequently Asked Questions (FAQ)

Q: Can the FCP400N80Z directly replace the FCP650N80Z in all applications?

A: The FCP400N80Z is electrically compatible with the FCP650N80Z for direct replacement in TO-220-3 through-hole mounting positions. Both devices share the same 800V voltage rating, matching operating temperature range, and identical package configuration. The FCP400N80Z provides superior performance with higher current capacity (14A vs. 10A) and lower on-state resistance (400 mOhm vs. 650 mOhm). No circuit modifications are required for substitution.

Q: What is the key difference between the FCP400N80Z and IXTP10N60P substitutes?

A: The primary difference is the maximum drain-to-source voltage rating. The FCP400N80Z maintains the original 800V specification, while the IXTP10N60P is rated for 600V maximum. Both devices support 10A continuous drain current and use the TO-220-3 package. The FCP400N80Z is the preferred substitute when the 800V rating is required. The IXTP10N60P is suitable only when circuit design margins accommodate the reduced voltage specification.

Q: Why is the FCP650N80Z classified as obsolete?

A: The FCP650N80Z is marked as obsolete by onsemi, indicating the manufacturer has discontinued active production and support. The FCP400N80Z represents the manufacturer's recommended alternative, offering improved electrical performance within the same product family and package format.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. Both the FCP400N80Z and IXTP10N60P maintain ROHS3 compliance status, matching the environmental and regulatory requirements of the original FCP650N80Z.

Q: What is the impact of higher gate charge in the FCP400N80Z?

A: The FCP400N80Z exhibits higher gate charge (56 nC vs. 35 nC at 10V) compared to the FCP650N80Z. This parameter affects gate drive circuit requirements and switching speed. Higher gate charge requires proportionally greater gate drive current or extended switching time. Circuit designs must accommodate this characteristic through appropriate gate driver selection and timing considerations.

Q: Can the IXTP10N60P be used in high-voltage applications rated above 600V?

A: No. The IXTP10N60P is rated for a maximum drain-to-source voltage of 600V. Use in applications exceeding this voltage specification violates the device absolute maximum ratings and creates risk of device failure. The FCP400N80Z must be used for applications requiring 800V voltage capability.

Q: What are the thermal considerations when substituting these devices?

A: All three devices operate across the identical temperature range of -55°C to 150°C. The FCP400N80Z and IXTP10N60P both provide higher power dissipation ratings (195W and 200W respectively) compared to the FCP650N80Z (162W), offering improved thermal margin. Thermal management design should account for the on-state resistance differences: lower resistance in the FCP400N80Z reduces conduction losses compared to the original device.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message