FCP600N60Z Equivalent & Substitute Parts

Part Overview

The FCP600N60Z is an N-Channel 600V 7.4A MOSFET manufactured by onsemi in the SuperFET® II series, housed in a TO-220-3 through-hole package. This device is rated for 89W power dissipation and operates across a temperature range of -55°C to 150°C. The part is designated as "Not For New Designs," indicating it has been superseded in onsemi's product portfolio. Equivalent and substitute parts are necessary to support existing applications, provide design flexibility, and ensure supply chain continuity for systems utilizing this voltage and current rating.

Key Parameters

Parameter	FCP600N60Z	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	7.4	A
Rds On (Max) @ Id, Vgs	600 @ 3.7A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	3.5 @ 250µA	V
Gate Charge (Qg) @ Vgs	26 @ 10V	nC
Input Capacitance (Ciss) @ Vds	1120 @ 25V	pF
Power Dissipation (Max)	89	W
Operating Temperature Range	-55 to 150	°C
Package / Case	TO-220-3	—
Mounting Type	Through Hole	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the FCP600N60Z is determined by strict alignment of electrical and mechanical parameters. The primary substitution criteria are:

Critical Parameters for Substitution:

Drain to Source Voltage (Vdss): Must equal or exceed 600V
Package / Case: Must be TO-220-3 or compatible through-hole TO-220 variant
Continuous Drain Current (Id): Must support 7.4A or higher at 25°C
Operating Temperature Range: Must encompass -55°C to 150°C
RoHS Compliance: Must maintain ROHS3 compliance status

Secondary Parameters for Compatibility Assessment:

Rds On (Max): Lower values indicate improved efficiency
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation (Max): Must accommodate thermal requirements of the application
Vgs(th): Threshold voltage must be compatible with gate drive circuitry

Substitute parts are grouped into two categories: Direct Equivalents (matching all critical parameters within application tolerance) and Higher-Performance Alternatives (exceeding current or power ratings while maintaining voltage and package compatibility).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg @ 10V (nC)	Power Diss. (W)	Package	Status
FCP600N60Z	onsemi	600	7.4	600 @ 3.7A, 10V	26	89	TO-220-3	Not For New Designs
STP10N60M2	STMicroelectronics	600	7.5	600 @ 3A, 10V	13.5	85	TO-220-3	Active
STP10NM60N	STMicroelectronics	600	10	550 @ 4A, 10V	19	70	TO-220-3	Active
STP10NM60ND	STMicroelectronics	600	8	600 @ 4A, 10V	20	70	TO-220-3	Obsolete
STP11NM60ND	STMicroelectronics	600	10	450 @ 5A, 10V	30	90	TO-220-3	Active
STP13NK60Z	STMicroelectronics	600	13	550 @ 4.5A, 10V	92	150	TO-220-3	Active
IXTP14N60P	IXYS	600	14	550 @ 7A, 10V	36	300	TO-220-3	Active
IXTP14N60PM	IXYS	600	7	550 @ 7A, 10V	36	75	TO-220-3 Isolated Tab	Active
IXTP8N65X2M	IXYS	650	4	550 @ 4A, 10V	12	32	TO-220-3	Active

Engineering Selection Recommendations

Direct Equivalent Selection:

STP10N60M2 (STMicroelectronics) is the closest functional equivalent to FCP600N60Z. It maintains 600V Vdss, delivers 7.5A continuous drain current (within 1.4% of the original 7.4A specification), and operates across the identical temperature range (-55°C to 150°C). Both devices are ROHS3 compliant and housed in TO-220-3 packages. The STP10N60M2 features lower gate charge (13.5 nC versus 26 nC), reducing switching losses in gate drive circuits. Product status is Active, ensuring long-term availability.

Higher-Performance Alternatives:

STP11NM60ND (STMicroelectronics) provides increased current capacity (10A versus 7.4A) with improved Rds On (450 mOhm versus 600 mOhm), supporting higher power applications. STP13NK60Z (STMicroelectronics) extends performance further with 13A current rating and 150W power dissipation. Both maintain 600V Vdss, TO-220-3 packaging, and ROHS3 compliance. STP13NK60Z is Active status; STP11NM60ND is Active status.

IXTP14N60P (IXYS) offers the highest current capacity (14A) and power dissipation (300W) among substitutes, suitable for applications requiring thermal headroom or higher current margins. It maintains 600V Vdss and TO-220-3 packaging with Active product status.

Voltage-Rated Alternative:

IXTP8N65X2M (IXYS) operates at 650V Vdss, providing 50V additional voltage margin. Current rating is 4A, making it suitable only for lower-current applications. Gate charge is significantly lower (12 nC), beneficial for high-frequency switching circuits. Product status is Active.

Parts to Avoid:

STP10NM60ND (STMicroelectronics) carries Obsolete product status and should not be selected for new applications or long-term supply requirements, despite electrical compatibility.

Frequently Asked Questions (FAQ)

Q: Can I use STP13NK60Z as a direct replacement for FCP600N60Z?

A: Yes, with design considerations. STP13NK60Z maintains the same 600V Vdss and TO-220-3 package. It delivers 13A continuous current versus the original 7.4A, and 150W power dissipation versus 89W. The higher current and power ratings provide design margin but do not create incompatibility. Gate charge is higher (92 nC versus 26 nC), requiring verification that gate drive circuitry can supply the additional charge within acceptable switching times. Both are ROHS3 compliant and operate across -55°C to 150°C.

Q: What is the difference between TO-220-3 and TO-220-3 Isolated Tab packaging?

A: Both are through-hole packages with three leads (Gate, Drain, Source). The standard TO-220-3 has the drain tab electrically connected to the drain lead. The TO-220-3 Isolated Tab variant (used in IXTP14N60PM) electrically isolates the tab from the drain, allowing independent thermal management without electrical connection. Selection depends on circuit board layout and thermal requirements. Isolated tab versions are typically used in applications requiring isolated heat sinking.

Q: Why does IXTP8N65X2M have lower gate charge than FCP600N60Z?

A: Gate charge (Qg) is determined by the internal capacitance of the MOSFET die and is not directly proportional to current or voltage ratings. IXTP8N65X2M uses advanced die technology (Ultra X2 series) that reduces parasitic capacitance, resulting in 12 nC gate charge despite higher voltage rating (650V). Lower gate charge reduces switching losses and gate drive power consumption, beneficial in high-frequency applications.

Q: Is STP10NM60ND suitable for new designs?

A: No. STP10NM60ND carries Obsolete product status. While electrically compatible with FCP600N60Z (600V, 8A, TO-220-3), obsolete parts face supply discontinuation and should not be selected for new designs. Active alternatives such as STP10N60M2, STP11NM60ND, or STP13NK60Z are recommended.

Q: What does "Not For New Designs" mean for FCP600N60Z?

A: "Not For New Designs" indicates that onsemi has discontinued active development and marketing of this part. It remains available from existing inventory but will not receive design updates or long-term support. New applications should select from Active-status alternatives such as STMicroelectronics or IXYS equivalents listed in this reference.

Q: Can I use IXTP14N60P in a circuit designed for 7.4A operation?

A: Yes. IXTP14N60P is rated for 14A continuous current, exceeding the 7.4A requirement. It maintains 600V Vdss and TO-220-3 packaging. The higher current rating provides design margin and does not create incompatibility. However, the increased power dissipation (300W versus 89W) and gate charge (36 nC versus 26 nC) must be evaluated for thermal management and gate drive capability. Verify that the application's thermal design can accommodate the higher power rating if the device operates near its maximum current.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed in this reference maintain ROHS3 compliance, matching the environmental and regulatory status of FCP600N60Z. All parts are also REACH Unaffected and classified as EAR99 for export control purposes.

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