Request Quote
(Ships tomorrow)
FCP4N60 Equivalent & Substitute Parts
Part Overview
The FCP4N60 is an N-Channel 600V 3.9A MOSFET manufactured by onsemi in the SuperFET™ series, housed in a Through Hole TO-220-3 package. This device is rated for 50W power dissipation and operates across a temperature range of -55°C to 150°C. The FCP4N60 holds an Obsolete product status, making identification of equivalent and substitute parts essential for ongoing design support, production continuity, and system maintenance. Active alternatives with comparable electrical characteristics and compatible packaging are available from multiple manufacturers.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 600 | V |
| Continuous Drain Current (Id) @ 25°C | 3.9 | A (Tc) |
| On-State Resistance (Rds On) @ 2A, 10V | 1.2 | Ohm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 5 | V |
| Gate Charge (Qg) @ 10V | 16.6 | nC |
| Power Dissipation (Max) | 50 | W (Tc) |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Package Type | TO-220-3 | Through Hole |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
Substitute Part Grouping Explanation
Substitution of the FCP4N60 is determined by alignment across the following critical parameters:
Voltage Rating (Vdss): The substitute must support the same or higher drain-to-source voltage to ensure safe operation in the original circuit topology. The FCP4N60 operates at 600V; substitutes must meet or exceed this specification.
Current Rating (Id): The continuous drain current must equal or exceed the original 3.9A specification to handle the same load conditions without thermal stress.
On-State Resistance (Rds On): Lower or equivalent on-state resistance ensures comparable power dissipation and thermal performance. The FCP4N60 specifies 1.2Ohm @ 2A, 10V.
Package Type: Through Hole TO-220-3 packaging is required for direct mechanical and electrical compatibility with existing PCB layouts and thermal management solutions.
Gate Drive Voltage: The substitute must operate with standard 10V gate drive voltage to maintain compatibility with existing gate driver circuits.
Operating Temperature Range: The substitute must support the full -55°C to 150°C operating range to ensure reliability across all environmental conditions.
Product Status & Compliance: Active product status with ROHS3 compliance and REACH unaffected status ensures long-term availability and regulatory conformance.
Substitutes are grouped into two categories: Direct Equivalents (matching voltage, current, and package specifications) and Similar Alternatives (meeting voltage and current requirements with compatible packaging but differing in secondary parameters such as gate charge or input capacitance).
Parameter Comparison
| Parameter | FCP4N60 (Main) | STP7N60M2 | STP6N60M2 | STP6N62K3 | IPP80R900P7XKSA1 |
|---|---|---|---|---|---|
| Manufacturer | onsemi | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon Technologies |
| Vdss (V) | 600 | 600 | 600 | 620 | 800 |
| Id @ 25°C (A) | 3.9 | 5 | 4.5 | 5.5 | 6 |
| Rds On @ 10V (Ohm) | 1.2 @ 2A | 0.95 @ 2.5A | 1.2 @ 2.25A | 1.2 @ 2.8A | 0.9 @ 2.2A |
| Vgs(th) (V) | 5 @ 250µA | 4 @ 250µA | 4 @ 250µA | 4.5 @ 50µA | 3.5 @ 110µA |
| Gate Charge Qg @ 10V (nC) | 16.6 | 8.8 | 8 | 34 | 15 |
| Power Dissipation (W) | 50 | 60 | 60 | 90 | 45 |
| Operating Temperature (°C) | -55 to 150 | -55 to 150 | -55 to 150 | 150 | -55 to 150 |
| Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Product Status | Obsolete | Active | Active | Active | Active |
| RoHS3 Compliant | Yes | Yes | Yes | Yes | Yes |
Engineering Selection Recommendations
STP7N60M2 (STMicroelectronics): This device is the primary substitute for the FCP4N60. It matches the 600V voltage rating and TO-220-3 package, with a higher continuous drain current of 5A compared to the original 3.9A. The on-state resistance of 0.95Ohm at 2.5A is superior to the FCP4N60 specification, resulting in lower power dissipation and improved thermal performance. Gate charge is significantly lower at 8.8nC, reducing gate driver stress. The device maintains full -55°C to 150°C operating range and holds Active product status with ROHS3 compliance. This substitute is suitable for direct replacement in applications where improved performance characteristics are acceptable.
STP6N60M2 (STMicroelectronics): This alternative maintains the 600V voltage rating and TO-220-3 package with a 4.5A continuous drain current. On-state resistance matches the FCP4N60 at 1.2Ohm, ensuring equivalent power dissipation characteristics. Gate charge of 8nC is lower than the original, reducing switching losses. Full temperature range support and Active status make this a conservative substitute when performance matching is prioritized over improvement.
STP6N62K3 (STMicroelectronics): This device offers a slightly elevated voltage rating of 620V with 5.5A continuous drain current and TO-220-3 packaging. On-state resistance remains at 1.2Ohm, matching the original specification. Power dissipation capability is increased to 90W. However, the operating temperature range specification lists only 150°C maximum without the lower -55°C limit stated explicitly. This device is suitable for applications not requiring the full lower temperature range.
IPP80R900P7XKSA1 (Infineon Technologies): This CoolMOS™ P7 series device provides an elevated 800V voltage rating with 6A continuous drain current in TO-220-3 packaging. On-state resistance of 0.9Ohm at 2.2A is superior to the FCP4N60. Gate charge of 15nC is comparable to the original. This substitute is appropriate for applications requiring higher voltage headroom or improved efficiency, with full -55°C to 150°C temperature range and Active product status.
All recommended substitutes maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory conformance and long-term supply availability.
Frequently Asked Questions (FAQ)
Q: Can the FCP4N60 be directly replaced with STP7N60M2?
A: Yes. Both devices share identical voltage (600V) and package (TO-220-3) specifications. The STP7N60M2 provides higher current capability (5A vs. 3.9A) and lower on-state resistance (0.95Ohm vs. 1.2Ohm), making it a direct mechanical and electrical replacement. No circuit modifications are required.
Q: What is the primary difference between STP7N60M2 and STP6N60M2?
A: Both devices operate at 600V with TO-220-3 packaging. STP7N60M2 provides 5A continuous current with 0.95Ohm on-state resistance, while STP6N60M2 provides 4.5A with 1.2Ohm on-state resistance. STP7N60M2 offers superior performance characteristics with lower switching losses due to reduced gate charge (8.8nC vs. 8nC).
Q: Why is the IPP80R900P7XKSA1 rated at 800V instead of 600V?
A: The IPP80R900P7XKSA1 is designed for applications requiring higher voltage margins or operation in higher voltage circuits. The elevated 800V rating provides additional safety margin in 600V applications while maintaining TO-220-3 package compatibility. This device is suitable when circuit topology permits higher voltage operation.
Q: Are all substitute parts available in the same packaging?
A: Yes. All recommended substitutes are housed in TO-220-3 Through Hole packaging, ensuring mechanical compatibility with existing PCB layouts and thermal management solutions. The FDS3590 mentioned in the original substitute list uses 8-SOIC surface mount packaging and is not recommended for direct replacement due to package incompatibility.
Q: What does "Active" product status mean for substitute selection?
A: Active product status indicates that the device is currently manufactured and supported by the supplier, ensuring long-term availability, consistent quality, and ongoing technical support. The FCP4N60 is Obsolete, making Active substitutes essential for production continuity and future design support.
Q: Do all substitutes support the full -55°C to 150°C operating temperature range?
A: STP7N60M2, STP6N60M2, and IPP80R900P7XKSA1 all support the full -55°C to 150°C range. STP6N62K3 specifies 150°C maximum without explicit lower temperature limit documentation. Verify temperature range requirements for your specific application before selection.
Q: How does gate charge affect circuit performance?
A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and gate driver stress. STP7N60M2 and STP6N60M2 feature significantly lower gate charge (8.8nC and 8nC respectively) compared to FCP4N60 (16.6nC), resulting in improved efficiency and reduced thermal load on gate driver circuits.
Q: Are all substitutes ROHS3 compliant?
A: Yes. All recommended substitutes carry ROHS3 compliance certification and REACH unaffected status, ensuring regulatory conformance for applications subject to environmental and hazardous substance restrictions.
Alternative Parts
SJ6012L2TP
Littelfuse Inc.
6 Alternative Parts
JMK107BBJ476MA-RE
Taiyo Yuden
10 Alternative Parts
GMK107BBJ475MA-T
Taiyo Yuden
5 Alternative Parts
SJ6020N2ARP
Littelfuse Inc.
3 Alternative Parts
SJ6025R2ATP
Littelfuse Inc.
4 Alternative Parts
2474-05L
API Delevan Inc.
1 Alternative Parts
4590R-684K
API Delevan Inc.
1 Alternative Parts
CM6560R-334
API Delevan Inc.
1 Alternative Parts
CM6460-104
API Delevan Inc.
1 Alternative Parts
5526-12
API Delevan Inc.
1 Alternative Parts


