FCP400N80Z N-Channel MOSFET 800V 14A Equivalent & Substitute Parts

Part Overview

The FCP400N80Z is an N-Channel MOSFET manufactured by onsemi, rated for 800V drain-to-source voltage and 14A continuous drain current in a TO-220-3 through-hole package. This device is part of the SuperFET® II series and is classified as "Not For New Designs," indicating it has been superseded in onsemi's product portfolio. Finding equivalent and substitute parts is necessary for applications requiring continued supply, design flexibility, or performance optimization while maintaining electrical and mechanical compatibility.

Key Parameters

Parameter	FCP400N80Z	Unit
Drain-to-Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	14	A
On-State Resistance (Rds On) @ Id, Vgs	400 mOhm @ 5.5A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	4.5 V @ 1.1 mA	V
Gate Charge (Qg) @ Vgs	56 nC @ 10V	nC
Power Dissipation (Max)	195	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the FCP400N80Z is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 800V
Continuous Drain Current (Id): Must equal or exceed 14A at 25°C
Package Type: Must be TO-220-3 through-hole configuration
FET Type: N-Channel MOSFET technology
Operating Temperature Range: Must support -55°C to 150°C

Secondary Compatibility Parameters:

Gate Drive Voltage: 10V maximum Rds On specification
On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Must support thermal requirements of the application

The substitute parts listed below meet the primary criteria and maintain electrical compatibility within the specified parameter ranges. Differences in secondary parameters reflect design improvements or trade-offs in newer device generations.

Parameter Comparison

Parameter	FCP400N80Z (onsemi)	IXFP12N65X2 (IXYS)	IXTP12N70X2 (IXYS)	STP13NM60N (STMicroelectronics)	STP15N80K5 (STMicroelectronics)	STP18N60DM2 (STMicroelectronics)	Unit
Vdss	800	650	700	600	800	600	V
Id @ 25°C	14	12	12	11	14	12	A
Rds On @ Id, Vgs	400 @ 5.5A, 10V	310 @ 6A, 10V	300 @ 6A, 10V	360 @ 5.5A, 10V	375 @ 7A, 10V	295 @ 6A, 10V	mOhm
Vgs(th) @ Id	4.5 @ 1.1 mA	5 @ 250 µA	4.5 @ 250 µA	4 @ 250 µA	5 @ 100 µA	5 @ 250 µA	V
Qg @ Vgs	56 @ 10V	18.5 @ 10V	19 @ 10V	30 @ 10V	32 @ 10V	20 @ 10V	nC
Power Dissipation (Max)	195	180	180	90	190	90	W
Operating Temperature	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	to 150	°C
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	—
Product Status	Not For New Designs	Active	Active	Active	Active	Active	—
RoHS Compliance	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

Direct Equivalent (Highest Compatibility):

STP15N80K5 (STMicroelectronics) is the closest functional equivalent to the FCP400N80Z. Both devices share identical Vdss (800V) and Id (14A) ratings, matching the primary electrical specifications. The STP15N80K5 is an active product with ROHS3 compliance and maintains the same operating temperature range. The on-state resistance of 375 mOhm at 7A, 10V is comparable to the FCP400N80Z specification of 400 mOhm at 5.5A, 10V. This part is recommended for applications requiring direct replacement with minimal circuit redesign.

Alternative Substitutes (Voltage or Current Trade-offs):

IXTP12N70X2 (IXYS) provides 700V Vdss and 12A Id ratings. This device is suitable for applications where the full 800V rating is not required but 700V operation is acceptable. The lower gate charge (19 nC) and reduced on-state resistance (300 mOhm) offer improved switching performance compared to the FCP400N80Z.

IXFP12N65X2 (IXYS) operates at 650V Vdss with 12A Id. This part is applicable to lower-voltage applications and features the lowest on-state resistance (310 mOhm) among the listed substitutes, providing superior conduction efficiency.

STP13NM60N (STMicroelectronics) and STP18N60DM2 (STMicroelectronics) are rated for 600V Vdss operation. These devices are suitable only for applications where 600V operation meets system requirements. Both are active products with full compliance certifications.

Compliance and Availability:

All substitute parts listed are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory standards. All substitute parts maintain active product status, ensuring long-term availability and supply chain stability compared to the FCP400N80Z, which is not recommended for new designs.

Frequently Asked Questions (FAQ)

Q: Can the STP15N80K5 directly replace the FCP400N80Z without circuit modifications?

A: Yes. The STP15N80K5 matches the FCP400N80Z in Vdss (800V), Id (14A), and TO-220-3 package configuration. Both devices operate across the same temperature range (-55°C to 150°C). Circuit modifications are not required for basic functionality. However, the lower gate charge (32 nC vs. 56 nC) may improve switching speed, which could require gate drive circuit optimization in high-frequency applications.

Q: What is the difference between the IXYS and STMicroelectronics substitute options?

A: The IXYS devices (IXFP12N65X2 and IXTP12N70X2) operate at lower voltage ratings (650V and 700V respectively) compared to the 800V FCP400N80Z. Both IXYS parts feature significantly lower gate charge (18.5 nC and 19 nC), reducing switching losses. STMicroelectronics substitutes include the STP15N80K5, which maintains the 800V rating, and lower-voltage alternatives (STP13NM60N and STP18N60DM2) rated for 600V operation.

Q: Are all substitute parts available in the same TO-220-3 package?

A: Yes. All substitute parts listed are supplied in TO-220-3 through-hole packages, ensuring mechanical and thermal interface compatibility with existing PCB designs and heat sink mounting arrangements.

Q: Why does the FCP400N80Z have higher gate charge than the substitute parts?

A: The FCP400N80Z belongs to the SuperFET® II series, an older generation technology. Substitute parts represent newer device generations with improved gate charge characteristics. Lower gate charge in modern devices (IXYS Ultra X2 series, STMicroelectronics SuperMESH5™ and MDmesh™ series) results in reduced switching losses and improved efficiency, reflecting advances in MOSFET design and manufacturing processes.

Q: Can I use a 600V-rated device in an 800V application?

A: No. Devices rated for 600V (STP13NM60N and STP18N60DM2) must not be used in applications requiring 800V operation. Exceeding the Vdss rating will cause device failure. Select only devices with Vdss ratings equal to or greater than the maximum voltage in your application.

Q: What is the significance of the "Not For New Designs" status of the FCP400N80Z?

A: This designation indicates that onsemi has discontinued active development and marketing of this part. While existing inventory may be available, the manufacturer does not recommend its use in new product designs. Substituting with active products (all listed alternatives) ensures access to manufacturer support, updated documentation, and continued supply chain availability.

Q: How do I determine which substitute part is best for my application?

A: Identify your application's maximum operating voltage and required continuous drain current. If your application requires 800V operation, use STP15N80K5. If your application operates below 700V, IXTP12N70X2 or IXFP12N65X2 are suitable. If your application operates below 600V, STP13NM60N or STP18N60DM2 are applicable. Verify that the selected device's Id rating meets or exceeds your application's current requirement.

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