FCP380N60 N-Channel MOSFET 600V 10.2A Equivalent & Substitute Parts

Part Overview

The FCP380N60 is an N-Channel MOSFET manufactured by onsemi in the SuperFET® II series, rated for 600V drain-to-source voltage with 10.2A continuous drain current at 25°C. The device is packaged in TO-220-3 through-hole configuration with a maximum power dissipation of 106W and operating temperature range of -55°C to 150°C. This part carries a "Not For New Designs" product status, indicating that onsemi has discontinued active development and support for this component. Identifying equivalent and substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and access components with active manufacturer support and current production status.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	10.2	A
On-State Resistance (Rds On) @ 5A, 10V	380	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3.5	V
Gate Charge (Qg) @ 10V	40	nC
Power Dissipation (Max)	106	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the FCP380N60 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

FET Type: N-Channel (mandatory match)
Drain to Source Voltage (Vdss): 600V minimum (equal or higher voltage rating acceptable)
Continuous Drain Current (Id): 10.2A minimum (equal or higher current rating acceptable)
On-State Resistance (Rds On): 380mOhm maximum at specified gate voltage (lower resistance acceptable)
Package Type: TO-220-3 through-hole configuration (mechanical compatibility required)
Operating Temperature Range: -55°C to 150°C minimum (equal or wider range acceptable)

Substitution Logic: Parts are grouped into two categories based on their relationship to the FCP380N60:

Direct Manufacturer Equivalent: Parts from alternative manufacturers that meet or exceed all primary electrical specifications while maintaining identical package configuration and thermal characteristics.
Similar Functional Equivalents: Parts that meet core electrical requirements (voltage, current, package) but may have variations in secondary parameters such as gate charge, input capacitance, or power dissipation. These parts are suitable for applications where the FCP380N60 specifications define the minimum acceptable performance threshold.

All substitute parts listed comply with RoHS3 and REACH regulations, matching the compliance status of the original component.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Package	Product Status
FCP380N60	onsemi	600	10.2	380 @ 5A, 10V	40 @ 10V	106	TO-220-3	Not For New Designs
IPP60R299CPXKSA1	Infineon Technologies	650	11	299 @ 6.6A, 10V	29 @ 10V	96	TO-220-3	Not For New Designs
AOT11S60L	Alpha & Omega Semiconductor	600	11	399 @ 3.8A, 10V	11 @ 10V	178	TO-220-3	Not For New Designs
IPP80R360P7XKSA1	Infineon Technologies	800	13	360 @ 5.6A, 10V	30 @ 10V	84	TO-220-3	Active
IXFP22N60P3	IXYS	600	22	360 @ 11A, 10V	38 @ 10V	500	TO-220-3	Active
SIHP15N60E-GE3	Vishay Siliconix	600	15	280 @ 8A, 10V	78 @ 10V	180	TO-220-3	Active
SPP11N60C3XKSA1	Infineon Technologies	650	11	380 @ 7A, 10V	60 @ 10V	125	TO-220-3	Active
STP13N60M2	STMicroelectronics	600	11	380 @ 5.5A, 10V	17 @ 10V	110	TO-220-3	Active
STP13NM60ND	STMicroelectronics	600	11	380 @ 5.5A, 10V	24.5 @ 10V	109	TO-220-3	Active
STP15N65M5	STMicroelectronics	650	11	340 @ 5.5A, 10V	22 @ 10V	125	TO-220-3	Active

Engineering Selection Recommendations

Active Product Status Priority: The following substitute parts carry "Active" product status, indicating ongoing manufacturer support, current production, and long-term availability:

IPP80R360P7XKSA1 (Infineon Technologies): Offers higher voltage rating (800V) with improved on-state resistance (360mOhm) and lower gate charge (30nC). Suitable for applications requiring enhanced voltage margin or reduced switching losses.
IXFP22N60P3 (IXYS): Provides significantly higher current capability (22A) and power dissipation (500W) while maintaining 600V rating and comparable on-state resistance (360mOhm). Appropriate for designs requiring higher current headroom or thermal margin.
SIHP15N60E-GE3 (Vishay Siliconix): Delivers improved on-state resistance (280mOhm) at 600V with 15A current rating. Offers lower conduction losses compared to the FCP380N60.
SPP11N60C3XKSA1 (Infineon Technologies): Matches current rating (11A) with identical on-state resistance (380mOhm) at 600V equivalent performance. Provides 650V voltage rating with active manufacturer support.
STP13N60M2 (STMicroelectronics): Meets electrical specifications with 11A at 600V and 380mOhm on-state resistance. Features significantly lower gate charge (17nC) for reduced switching losses.
STP13NM60ND (STMicroelectronics): Equivalent performance at 600V, 11A with 380mOhm on-state resistance and moderate gate charge (24.5nC).
STP15N65M5 (STMicroelectronics): Provides 650V rating with improved on-state resistance (340mOhm) and 11A current capability.

Compliance Verification: All listed substitute parts comply with RoHS3 and REACH regulations. Moisture sensitivity level (MSL) ratings are documented for each part. ECCN and HTSUS classifications match the original component, ensuring regulatory consistency.

Not For New Designs Status: The IPP60R299CPXKSA1 and AOT11S60L, while meeting electrical substitution criteria, retain "Not For New Designs" status. These parts are suitable only for legacy system maintenance or design continuation where new component qualification is not required.

Frequently Asked Questions (FAQ)

Q: Can the FCP380N60 be directly replaced with any of the listed substitute parts?

A: Direct replacement depends on application-specific requirements. All listed parts meet the minimum electrical specifications (600V minimum, 10.2A minimum, TO-220-3 package). However, variations in gate charge, on-state resistance, and power dissipation may affect circuit performance. Thermal design, switching frequency, and gate drive circuitry must be evaluated for each substitute.

Q: What is the significance of the "Not For New Designs" product status?

A: This status indicates that the manufacturer has discontinued active development and support for the component. While existing inventory remains available, long-term supply cannot be guaranteed. For new designs or long-term production commitments, selection of parts with "Active" status is recommended to ensure sustained availability and manufacturer support.

Q: Are all substitute parts pin-compatible with the FCP380N60?

A: All listed substitute parts use the TO-220-3 package configuration, which provides identical pin assignments (Gate, Drain, Source). Physical mounting and PCB layout compatibility is maintained. However, thermal characteristics and power dissipation differences may require adjustments to heatsinking or thermal management design.

Q: How does on-state resistance (Rds On) affect circuit performance?

A: Lower on-state resistance reduces conduction losses and heat generation during normal operation. The FCP380N60 specifies 380mOhm at 5A, 10V. Substitute parts with lower Rds On values (such as SIHP15N60E-GE3 at 280mOhm or IPP60R299CPXKSA1 at 299mOhm) reduce power dissipation and improve efficiency. Higher Rds On values increase conduction losses and require enhanced thermal management.

Q: What role does gate charge (Qg) play in substitution decisions?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (such as STP13N60M2 at 17nC) reduces switching losses and allows faster switching transitions, beneficial for high-frequency applications. Higher gate charge (such as SIHP15N60E-GE3 at 78nC) requires more gate drive energy but may provide improved noise immunity.

Q: Can substitute parts with higher voltage ratings (650V or 800V) be used in 600V applications?

A: Yes. Higher voltage-rated devices provide additional voltage margin and are electrically compatible with 600V applications. However, higher voltage ratings typically result in increased on-state resistance and input capacitance. The IPP80R360P7XKSA1 (800V) and STP15N65M5 (650V) are suitable for 600V circuits where enhanced voltage headroom is beneficial.

Q: What is the importance of matching the operating temperature range?

A: The FCP380N60 specifies -55°C to 150°C operating range. All listed substitute parts meet or exceed this range. Matching or exceeding the temperature specification ensures reliable operation across the full intended application environment. Deviations in temperature range may indicate different semiconductor process technology or thermal characteristics.

Q: How should thermal design be adjusted when substituting parts with different power dissipation ratings?

A: Power dissipation differences directly impact heatsinking requirements. The FCP380N60 specifies 106W maximum dissipation. Substitute parts range from 84W (IPP80R360P7XKSA1) to 500W (IXFP22N60P3). Lower dissipation parts may allow reduced heatsink size, while higher dissipation parts provide thermal margin. Thermal analysis must account for actual circuit operating conditions, not maximum ratings.

Q: Are there differences in gate threshold voltage (Vgs(th)) among substitute parts?

A: Yes. The FCP380N60 specifies 3.5V at 250µA. Substitute parts range from 3.5V to 5V. Threshold voltage affects gate drive circuit design and switching behavior. Parts with lower threshold voltage (3.5V) require less gate drive voltage for full enhancement. Parts with higher threshold voltage (5V) may require higher gate drive voltage to ensure complete turn-on and minimize on-state resistance.

Q: Which substitute part offers the best overall performance match to the FCP380N60?

A: SPP11N60C3XKSA1 and STP13N60M2 provide the closest electrical match: both rated 11A at 600V with 380mOhm on-state resistance, matching the FCP380N60 performance envelope. SPP11N60C3XKSA1 offers 650V rating with active manufacturer support. STP13N60M2 features significantly lower gate charge (17nC) for reduced switching losses. Selection between these depends on whether voltage margin or switching efficiency is prioritized.

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