FCP36N60N Equivalent & Substitute Parts

Part Overview

The FCP36N60N is an N-Channel 600V 36A MOSFET manufactured by onsemi in the SupreMOS™ series, housed in a TO-220-3 through-hole package. This device is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support, maintenance, and production continuity. The part delivers 312W maximum power dissipation and operates across a temperature range of -55°C to 150°C, serving applications requiring high-voltage switching and power conversion.

Substiute Parts

FCP36N60N

onsemiIn Stock: 1604FCP36N60N Datasheet

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IXKC23N60C5

IXYSIn Stock: 913IXKC23N60C5 Datasheet

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STP40N60M2

STMicroelectronicsIn Stock: 2130STP40N60M2 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FCP36N60N is determined by strict alignment of electrical and mechanical parameters. The primary substitution criteria are:

Critical Parameters for Substitution:

• Drain to Source Voltage (Vdss): Must equal 600V
• FET Type: Must be N-Channel
• Technology: Must be MOSFET (Metal Oxide)
• Operating Temperature Range: Must support -55°C to 150°C
• Mounting Type: Must be Through Hole
• RoHS Compliance: Must maintain ROHS3 Compliant status

Secondary Parameters Influencing Substitution:

• Continuous Drain Current (Id): Substitute must meet or exceed 36A at 25°C
• Rds On (Max): Lower or equal values indicate improved performance
• Gate Charge (Qg): Lower values reduce switching losses
• Package compatibility: TO-220-3 or equivalent footprint

The identified substitute parts meet the critical voltage, current, and compliance requirements while operating within the same temperature envelope. Variations in secondary parameters reflect different manufacturing technologies and design approaches within the same functional class.

Parameter Comparison

Engineering Selection Recommendations

STP40N60M2 (STMicroelectronics) – Primary Substitute

The STP40N60M2 is the preferred substitute for the FCP36N60N. This device maintains active product status, ensuring long-term availability and supply chain stability. It meets all critical electrical parameters: 600V Vdss, 34A continuous drain current, and identical operating temperature range (-55°C to 150°C). The TO-220-3 package provides direct mechanical compatibility. The STP40N60M2 demonstrates superior performance characteristics with lower gate charge (57 nC versus 112 nC) and reduced input capacitance (2500 pF versus 4785 pF), resulting in lower switching losses. ROHS3 compliance is maintained. The 250W power dissipation rating is slightly lower than the original part but remains adequate for most applications within the specified current envelope.

IXKC23N60C5 (IXYS) – Secondary Substitute

The IXKC23N60C5 serves as a secondary substitute option when the STP40N60M2 is unavailable. This device maintains 600V Vdss and identical operating temperature range. However, the continuous drain current is rated at 23A, which is below the original 36A specification. The ISOPLUS220™ package differs from the TO-220-3 footprint, requiring PCB layout verification and potential mechanical redesign. The part carries Last Time Buy status, indicating limited future availability. ROHS3 compliance is maintained. Selection of this substitute is appropriate only for applications where the 23A current rating is sufficient and package compatibility can be accommodated.

Compliance and Regulatory Considerations

All identified substitutes maintain ROHS3 compliance and REACH Unaffected status, consistent with the original FCP36N60N. No regulatory barriers exist to substitution. The ECCN classification (EAR99) and HTSUS code (8541.29.0095) remain unchanged across all parts, simplifying procurement and export documentation.

Frequently Asked Questions (FAQ)

Q: Can the STP40N60M2 directly replace the FCP36N60N without PCB modifications?

A: Yes. The STP40N60M2 uses the TO-220-3 package, which provides identical pin configuration and footprint compatibility with the FCP36N60N. No PCB layout changes are required for mechanical mounting or electrical connection.

Q: What is the significance of the lower gate charge in the STP40N60M2?

A: Gate charge (Qg) directly affects switching speed and driver power requirements. The STP40N60M2 gate charge of 57 nC is substantially lower than the FCP36N60N at 112 nC. This reduction decreases switching losses and allows use of lower-power gate driver circuits, improving overall system efficiency.

Q: Why is the IXKC23N60C5 listed as a secondary substitute if its current rating is lower?

A: The IXKC23N60C5 meets all critical voltage and temperature specifications required for 600V MOSFET applications. The 23A continuous drain current is lower than the original 36A, making it suitable only for applications with reduced current demands. The ISOPLUS220™ package requires footprint verification before selection.

Q: Are there thermal management differences between these substitutes?

A: The FCP36N60N and STP40N60M2 both use TO-220-3 packages with similar thermal characteristics. The STP40N60M2 specifies 250W maximum power dissipation versus 312W for the original part. The IXKC23N60C5 does not specify maximum power dissipation in the provided data. Thermal management design should account for the specific power dissipation rating of the selected substitute.

Q: What is the product status significance for long-term design decisions?

A: The FCP36N60N is classified as obsolete, indicating no further manufacturing or support from onsemi. The STP40N60M2 carries active status, ensuring continued availability and manufacturing support. The IXKC23N60C5 is Last Time Buy, meaning IXYS will cease production after existing inventory is depleted. For new designs or long-term production, the STP40N60M2 is the recommended choice.

Q: Do all substitutes maintain the same gate voltage specifications?

A: No. The FCP36N60N specifies ±30V maximum gate voltage, the STP40N60M2 specifies ±25V, and the IXKC23N60C5 specifies ±20V. Gate driver circuits must be designed to operate within the lower ±20V limit if the IXKC23N60C5 is selected, or the ±25V limit for the STP40N60M2. Exceeding these ratings will damage the device.

Q: How do input capacitance differences affect circuit design?

A: Input capacitance (Ciss) influences gate charge requirements and switching transient behavior. The FCP36N60N has 4785 pF at 100V, while the STP40N60M2 has 2500 pF and the IXKC23N60C5 has 2800 pF. Lower capacitance values reduce gate driver current demands and improve switching speed. Gate driver circuits designed for the original part will operate more efficiently with the lower-capacitance substitutes.

Q: Is RoHS compliance maintained across all substitutes?

A: Yes. The FCP36N60N, STP40N60M2, and IXKC23N60C5 are all ROHS3 compliant. No regulatory or environmental compliance issues arise from substitution. All parts are also REACH Unaffected, maintaining consistent regulatory status.