FCP290N80 Equivalent & Substitute Parts

Part Overview

The FCP290N80 is an N-Channel 800V 17A MOSFET in TO-220-3 through-hole packaging, manufactured by onsemi as part of the SuperFET® II series. This device is classified as Obsolete, indicating it has reached end-of-life status and is no longer recommended for new designs. The part delivers 212W maximum power dissipation and features a maximum on-resistance of 290mOhm at specified conditions.

Due to its obsolete status, locating equivalent or substitute components becomes necessary for ongoing production support, maintenance applications, and legacy system repairs. Substitute parts must maintain electrical compatibility across critical parameters including drain-source voltage rating, continuous drain current capability, and thermal characteristics.

Substiute Parts

FCP290N80
onsemiIn Stock: 1543FCP290N80 Datasheet
FCP290N80
Current Part
NTP360N80S3Z
onsemiIn Stock: 927NTP360N80S3Z Datasheet
NTP360N80S3Z
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 17 A
Rds On (Max) @ Id, Vgs 290 mOhm @ 8.5A, 10V
Power Dissipation (Max) 212 W
Operating Temperature Range -55 to 150 °C
Package Type TO-220-3 Through Hole
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10V
Vgs(th) (Max) @ Id 4.5 V @ 1.7mA

Substitute Part Grouping Explanation

Substitution eligibility for the FCP290N80 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Compatibility Criteria:

  • Drain to Source Voltage (Vdss): Must equal or exceed 800V
  • FET Type: Must be N-Channel
  • Package Type: Must be TO-220-3 through-hole configuration
  • Operating Temperature Range: Must support -55°C to 150°C minimum
  • Technology: Must be MOSFET (Metal Oxide)

Secondary Performance Criteria:

  • Current - Continuous Drain (Id): Substitute must support minimum 17A at 25°C
  • Power Dissipation: Substitute must support minimum 212W
  • On-Resistance (Rds On): Lower values indicate improved performance but are not mandatory for substitution

The NTP360N80S3Z meets the primary compatibility criteria with matching 800V Vdss rating, N-Channel configuration, TO-220-3 packaging, and identical operating temperature range. However, the substitute exhibits reduced continuous drain current (13A versus 17A) and lower power dissipation (96W versus 212W), indicating application-dependent suitability.

Parameter Comparison

Parameter FCP290N80 NTP360N80S3Z Unit
Manufacturer onsemi onsemi
FET Type N-Channel N-Channel
Drain to Source Voltage (Vdss) 800 800 V
Current - Continuous Drain (Id) @ 25°C 17 13 A
Rds On (Max) @ Id, Vgs 290 @ 8.5A, 10V 360 @ 6.5A, 10V mOhm
Power Dissipation (Max) 212 96 W
Operating Temperature Range -55 to 150 -55 to 150 °C
Package Type TO-220-3 TO-220-3
Mounting Type Through Hole Through Hole
Gate Charge (Qg) (Max) @ Vgs 75 @ 10V 25.3 @ 10V nC
Vgs(th) (Max) @ Id 4.5 @ 1.7mA 3.8 @ 300µA V
Input Capacitance (Ciss) (Max) @ Vds 3205 @ 100V 1143 @ 400V pF
Vgs (Max) ±20 ±20 V
RoHS Status ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected
Product Status Obsolete Not For New Designs

Engineering Selection Recommendations

FCP290N80 (Primary Part): The FCP290N80 is classified as Obsolete and should not be selected for new designs. This part is suitable only for legacy system maintenance, repair, and replacement applications where original component specifications are required. The part maintains ROHS3 compliance and REACH unaffected status.

NTP360N80S3Z (Substitute Part): The NTP360N80S3Z is classified as Not For New Designs and serves as the manufacturer-recommended substitute. This part maintains electrical compatibility through identical 800V Vdss rating, N-Channel configuration, and TO-220-3 packaging. Both parts share identical operating temperature range (-55°C to 150°C) and comply with ROHS3 and REACH requirements.

Substitution Constraints: The NTP360N80S3Z exhibits reduced continuous drain current (13A versus 17A) and lower maximum power dissipation (96W versus 212W). Applications requiring the full 17A continuous current capability or 212W power dissipation cannot use this substitute without circuit redesign or thermal management modifications. The substitute features lower on-resistance (360mOhm versus 290mOhm at different measurement points) and significantly lower gate charge (25.3nC versus 75nC), which may alter switching characteristics in existing circuit designs.

Both parts are suitable for legacy production support and maintenance applications where component availability is the primary concern and electrical performance margins exist within the application design.

Frequently Asked Questions (FAQ)

Q: Can the NTP360N80S3Z directly replace the FCP290N80 in all applications?

A: Direct replacement is limited by current and power dissipation ratings. The NTP360N80S3Z supports 13A continuous drain current versus the FCP290N80's 17A, and dissipates 96W maximum versus 212W. Applications operating at or near the FCP290N80's rated current or power levels require circuit evaluation before substitution.

Q: Are the TO-220-3 packages physically identical?

A: Both parts use TO-220-3 through-hole packaging, ensuring mechanical compatibility with existing PCB layouts and mounting hardware. No physical modifications to the circuit board or mounting structure are required.

Q: What is the difference between the Obsolete and Not For New Designs product statuses?

A: Obsolete indicates the FCP290N80 has reached end-of-life and is no longer manufactured or supported. Not For New Designs indicates the NTP360N80S3Z is still available but onsemi does not recommend it for new product development. Both statuses indicate these parts are suitable for legacy system support and maintenance only.

Q: Do both parts meet current environmental compliance standards?

A: Yes. Both the FCP290N80 and NTP360N80S3Z are ROHS3 compliant and REACH unaffected, meeting current environmental regulations for electronic components.

Q: How do the gate charge differences affect circuit performance?

A: The NTP360N80S3Z exhibits significantly lower gate charge (25.3nC versus 75nC at 10V). This reduces the charge required to switch the transistor on and off, potentially altering switching speed and driver circuit requirements. Existing gate driver circuits designed for the FCP290N80 may require evaluation for compatibility with the lower gate charge characteristic.

Q: What is the significance of the different on-resistance specifications?

A: The FCP290N80 specifies 290mOhm at 8.5A and 10V gate voltage, while the NTP360N80S3Z specifies 360mOhm at 6.5A and 10V. The higher on-resistance of the substitute increases conduction losses and heat generation. Applications with tight thermal budgets or high continuous current operation require thermal analysis before substitution.

Q: Are there inventory considerations for these parts?

A: The FCP290N80 has 1460 pieces in stock, while the NTP360N80S3Z has 838 pieces available. Both parts are currently available through onsemi distribution channels, though the FCP290N80's larger inventory reflects its obsolete status and remaining stock from previous production runs.

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