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FCP22N60N Equivalent & Substitute Parts
Part Overview
The FCP22N60N is an N-Channel 600V 22A MOSFET manufactured by onsemi in the SupreMOS™ series, housed in a TO-220-3 through-hole package. This device is rated for 205W power dissipation and operates across a temperature range of -55°C to 150°C. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across drain-source voltage, continuous drain current, on-resistance characteristics, and gate charge parameters while accommodating the through-hole TO-220-3 package format.
Substiute Parts
Key Parameters
| Parameter | FCP22N60N | Unit |
|---|---|---|
| FET Type | N-Channel | - |
| Drain to Source Voltage (Vdss) | 600 | V |
| Continuous Drain Current (Id) @ 25°C | 22 | A |
| Rds On (Max) @ Id, Vgs | 165 mOhm @ 11A, 10V | - |
| Gate Charge (Qg) (Max) @ Vgs | 45 | nC @ 10V |
| Power Dissipation (Max) | 205 | W |
| Operating Temperature Range | -55 to 150 | °C |
| Package / Case | TO-220-3 | - |
| Mounting Type | Through Hole | - |
| RoHS Status | ROHS3 Compliant | - |
Substitute Part Grouping Explanation
Substitution of the FCP22N60N is determined by strict adherence to the following electrical and mechanical parameters:
Primary Substitution Criteria:
- Drain to Source Voltage (Vdss): 600V minimum (600V or 650V acceptable)
- Continuous Drain Current (Id): 22A or greater at 25°C
- On-Resistance (Rds On): 165 mOhm or lower at specified gate voltage
- Gate Charge (Qg): 45 nC or lower at 10V
- Package: TO-220-3 through-hole configuration
- Operating Temperature: -55°C to 150°C minimum
- Compliance: ROHS3 compliant
Substitution Logic: Parts are grouped into two categories based on their relationship to the FCP22N60N:
-
Manufacturer Recommended Substitute (MFR): NTP165N65S3H from onsemi meets the electrical requirements with equivalent on-resistance and lower gate charge, though with reduced continuous drain current (19A) and slightly elevated voltage rating (650V).
-
Similar Alternatives: Parts from Alpha & Omega Semiconductor, Infineon Technologies, and IXYS that maintain 600V or 650V ratings with drain currents ranging from 15A to 27A and on-resistance values between 160 mOhm and 199 mOhm. These alternatives accommodate various application requirements while preserving the TO-220-3 package footprint.
Parameter Comparison
| Part Number | Manufacturer | Vdss (V) | Id @ 25°C (A) | Rds On (mOhm) | Qg (nC) | Pd (W) | Status | Package |
|---|---|---|---|---|---|---|---|---|
| FCP22N60N | onsemi | 600 | 22 | 165 @ 11A, 10V | 45 @ 10V | 205 | Obsolete | TO-220-3 |
| NTP165N65S3H | onsemi | 650 | 19 | 165 @ 9.5A, 10V | 35 @ 10V | 142 | Not For New Designs | TO-220-3 |
| AOT20S60L | Alpha & Omega | 600 | 20 | 199 @ 10A, 10V | 19.8 @ 10V | 266 | Not For New Designs | TO-220-3 |
| AOT27S60L | Alpha & Omega | 600 | 27 | 160 @ 13.5A, 10V | 26 @ 10V | 357 | Not For New Designs | TO-220-3 |
| IPP60R180P7XKSA1 | Infineon | 650 | 18 | 180 @ 5.6A, 10V | 25 @ 10V | 72 | Active | TO-220-3 |
| IPP60R190C6XKSA1 | Infineon | 600 | 20.2 | 190 @ 9.5A, 10V | 63 @ 10V | 151 | Not For New Designs | TO-220-3 |
| IPP60R199CPXKSA1 | Infineon | 650 | 16 | 199 @ 9.9A, 10V | 43 @ 10V | 139 | Not For New Designs | TO-220-3 |
| IXFP22N60P3 | IXYS | 600 | 22 | 360 @ 11A, 10V | 38 @ 10V | 500 | Active | TO-220-3 |
| IXKC20N60C | IXYS | 600 | 15 | 190 @ 16A, 10V | 114 @ 10V | - | Active | ISOPLUS220™ |
| SPP20N65C3XKSA1 | Infineon | 650 | 20.7 | 190 @ 13.1A, 10V | 114 @ 10V | 208 | Not For New Designs | TO-220-3 |
| STP24N60DM2 | STMicroelectronics | 600 | 18 | 200 @ 9A, 10V | 29 @ 10V | 150 | Active | TO-220-3 |
Engineering Selection Recommendations
For Active Production (Preferred):
IXFP22N60P3 from IXYS provides the closest electrical match to the FCP22N60N with identical 600V rating and 22A continuous drain current in an active product status. This part maintains TO-220-3 package compatibility and ROHS3 compliance. The higher on-resistance (360 mOhm versus 165 mOhm) requires thermal design verification in applications where the original 165 mOhm specification was critical to thermal performance.
STP24N60DM2 from STMicroelectronics offers an active alternative with 600V rating, 18A continuous drain current, and 200 mOhm on-resistance. This part is suitable for applications where the 22A current rating can be accommodated by parallel configurations or where the application current requirement is 18A or lower.
IPP60R180P7XKSA1 from Infineon (CoolMOS™ P7 series) is an active product with 650V rating, 18A continuous drain current, and superior gate charge characteristics (25 nC). This part is appropriate for designs where the elevated voltage rating provides system margin and where lower gate charge reduces driver power dissipation.
For Obsolete Design Continuation:
NTP165N65S3H from onsemi is the manufacturer-recommended substitute, offering equivalent on-resistance (165 mOhm) and lower gate charge (35 nC) despite reduced continuous drain current (19A). This part maintains onsemi ecosystem compatibility and is suitable for applications where 19A current capacity is sufficient.
AOT27S60L from Alpha & Omega Semiconductor provides the highest continuous drain current (27A) among alternatives, enabling single-device solutions in high-current applications. The 160 mOhm on-resistance and 600V rating match the original specification intent.
Compliance Verification:
All recommended substitutes maintain ROHS3 compliance and REACH unaffected status, consistent with the original FCP22N60N certification. Package selection between TO-220-3 and ISOPLUS220™ variants depends on PCB layout and thermal management infrastructure.
Frequently Asked Questions (FAQ)
Q: Can the NTP165N65S3H directly replace the FCP22N60N in all applications?
A: The NTP165N65S3H is the manufacturer-recommended substitute with equivalent on-resistance (165 mOhm) and superior gate charge characteristics (35 nC versus 45 nC). However, the reduced continuous drain current (19A versus 22A) requires verification that the application current requirement does not exceed 19A at 25°C. The elevated voltage rating (650V versus 600V) provides additional system margin.
Q: What is the primary difference between the IXFP22N60P3 and the original FCP22N60N?
A: Both parts share identical 600V rating and 22A continuous drain current specifications. The IXFP22N60P3 has significantly higher on-resistance (360 mOhm versus 165 mOhm), which increases power dissipation and requires thermal design reassessment. The IXFP22N60P3 is an active product, whereas the FCP22N60N is obsolete.
Q: Are all substitute parts available in the same TO-220-3 package?
A: All recommended substitutes are available in TO-220-3 through-hole packages except IXKC20N60C, which uses the ISOPLUS220™ package. ISOPLUS220™ provides improved thermal performance but requires different PCB footprint and mounting considerations. Verify PCB layout compatibility before selecting this alternative.
Q: How does gate charge affect device selection?
A: Gate charge (Qg) determines the energy required to switch the MOSFET and influences driver circuit design. The FCP22N60N specifies 45 nC at 10V. Substitutes with lower gate charge (such as NTP165N65S3H at 35 nC or AOT27S60L at 26 nC) reduce driver power dissipation and enable faster switching. Substitutes with higher gate charge (such as IXKC20N60C at 114 nC) require more robust driver circuits.
Q: What is the significance of on-resistance (Rds On) in substitution?
A: On-resistance directly determines conduction losses in the MOSFET. The FCP22N60N specifies 165 mOhm at 11A and 10V gate voltage. Substitutes with higher on-resistance (such as IXFP22N60P3 at 360 mOhm) generate greater heat and require enhanced thermal management. Substitutes with equivalent or lower on-resistance (such as AOT27S60L at 160 mOhm) maintain or improve thermal performance.
Q: Can multiple lower-current parts be paralleled to replace the FCP22N60N?
A: Parallel operation of MOSFETs requires careful gate drive design and PCB layout to ensure balanced current distribution. While technically feasible, paralleling introduces complexity and potential reliability concerns. Single-device substitutes such as IXFP22N60P3 (22A) or AOT27S60L (27A) are preferred for direct replacement.
Q: What compliance certifications should be verified for substitute parts?
A: All recommended substitutes maintain ROHS3 compliance and REACH unaffected status, consistent with the original FCP22N60N. Verify that the selected substitute meets your specific application's environmental and regulatory requirements before implementation.
Q: How does product status affect long-term availability?
A: Active products (IXFP22N60P3, IPP60R180P7XKSA1, STP24N60DM2) are recommended for new designs and offer extended availability. Parts marked "Not For New Designs" may have limited production windows and should be evaluated for long-term supply chain risk in production applications.
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