FCP220N80 Equivalent & Substitute Parts

Part Overview

The FCP220N80 is an N-Channel 800V 23A MOSFET manufactured by onsemi in the SuperFET® II series, housed in a TO-220-3 through-hole package. This device is classified as obsolete, indicating it is no longer in active production. The high drain current rating of 23A at 25°C and 800V drain-to-source voltage rating make it suitable for high-voltage switching applications. Due to its obsolete status, equivalent and substitute parts are necessary for ongoing system support, design updates, and procurement continuity.

Key Parameters

Parameter	FCP220N80	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	23	A
Rds On (Max) @ Id, Vgs	220 mOhm @ 11.5A, 10V	mOhm
Gate Charge (Qg) (Max) @ Vgs	105	nC @ 10V
Power Dissipation (Max)	278	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	Through Hole
FET Type	N-Channel	-
Technology	MOSFET (Metal Oxide)	-

Substitute Part Grouping Explanation

Substitution of the FCP220N80 is determined by the following critical parameters: drain-to-source voltage rating (Vdss), continuous drain current capability (Id), on-state resistance (Rds On), package type, and thermal characteristics. The FCP220N80 operates at 800V with 23A continuous current and 220 mOhm on-state resistance.

Substitute parts are grouped into two categories:

Category 1: Direct Voltage and Package Match (800V, TO-220-3) Parts maintaining the 800V Vdss rating and TO-220-3 package configuration. These substitutes may have reduced current ratings or different on-state resistance characteristics but preserve the high-voltage capability and mechanical compatibility.

Category 2: Reduced Voltage Alternatives (600V, TO-220) Parts with lower Vdss ratings (600V) in compatible through-hole packages. These substitutes are applicable only in applications where the 800V rating is not required and where the lower voltage specification meets system requirements.

Parameter Comparison

Parameter	FCP220N80	NTP360N80S3Z	STI20N60M2-EP	STP22NM60N	Unit
Manufacturer	onsemi	onsemi	STMicroelectronics	STMicroelectronics	-
Drain to Source Voltage (Vdss)	800	800	600	600	V
Continuous Drain Current (Id) @ 25°C	23	13	13	16	A
Rds On (Max) @ Id, Vgs	220 @ 11.5A, 10V	360 @ 6.5A, 10V	278 @ 6.5A, 10V	220 @ 8A, 10V	mOhm
Gate Charge (Qg) (Max) @ Vgs	105 @ 10V	25.3 @ 10V	21.7 @ 10V	44 @ 10V	nC
Power Dissipation (Max)	278	96	110	125	W
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C
Package Type	TO-220-3	TO-220-3	TO-220	TO-220	-
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	-
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	-
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	-
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	-

Engineering Selection Recommendations

NTP360N80S3Z (onsemi SuperFET® III) The NTP360N80S3Z maintains the 800V Vdss rating and TO-220-3 package configuration of the FCP220N80. This part is classified as "Not For New Designs" but remains available with 838 units in stock. The NTP360N80S3Z exhibits reduced continuous drain current (13A versus 23A) and higher on-state resistance (360 mOhm versus 220 mOhm), resulting in lower power dissipation (96W versus 278W). This substitute is suitable for applications where the 800V voltage rating is mandatory and current requirements do not exceed 13A. Both parts are ROHS3 compliant and REACH unaffected.

STI20N60M2-EP (STMicroelectronics MDmesh™ M2-EP) The STI20N60M2-EP operates at 600V Vdss with 13A continuous drain current in a TO-220 through-hole package. This part is in active production status. The reduced voltage rating (600V versus 800V) restricts its use to applications where maximum system voltage does not exceed 600V. The on-state resistance of 278 mOhm at 6.5A and power dissipation of 110W are intermediate between the FCP220N80 and NTP360N80S3Z. This substitute is applicable only when the lower voltage specification meets system requirements. ROHS3 compliance and REACH unaffected status are confirmed.

STP22NM60N (STMicroelectronics MDmesh™ II) The STP22NM60N is a 600V, 16A MOSFET in the TO-220 package with active production status and 25,100 units in stock. The on-state resistance of 220 mOhm at 8A matches the FCP220N80 specification, and power dissipation is 125W. Like the STI20N60M2-EP, this part operates at 600V and is restricted to applications where the lower voltage rating is acceptable. The higher current rating (16A) and lower gate charge (44 nC) compared to the STI20N60M2-EP provide improved performance within the 600V constraint. ROHS3 compliance and REACH unaffected status are confirmed.

Frequently Asked Questions (FAQ)

Q: Can the NTP360N80S3Z directly replace the FCP220N80 in all applications? A: The NTP360N80S3Z maintains the 800V voltage rating and TO-220-3 package, ensuring mechanical and electrical compatibility at the pin level. However, the reduced continuous drain current (13A versus 23A) and increased on-state resistance (360 mOhm versus 220 mOhm) require verification that application current demands do not exceed 13A and that thermal dissipation remains within acceptable limits.

Q: What is the primary limitation of STI20N60M2-EP and STP22NM60N as substitutes? A: Both parts operate at 600V maximum drain-to-source voltage, compared to the FCP220N80 rating of 800V. These substitutes are applicable only in applications where the maximum system voltage does not exceed 600V. Use in higher-voltage circuits will result in device failure.

Q: Are all substitute parts RoHS3 compliant? A: Yes. The FCP220N80, NTP360N80S3Z, STI20N60M2-EP, and STP22NM60N are all ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.

Q: What is the difference between TO-220-3 and TO-220 packages? A: Both are through-hole packages with identical pin configurations and mechanical footprints suitable for PCB mounting. The designation difference reflects manufacturer nomenclature; both are mechanically and electrically compatible for board-level integration.

Q: Which substitute offers the best availability? A: The STP22NM60N has the highest inventory level at 25,100 units in stock. The NTP360N80S3Z has 838 units available, and the STI20N60M2-EP has 724 units available. Availability should be confirmed with the component supplier for current procurement requirements.

Q: Can the FCP220N80 be used in new designs? A: No. The FCP220N80 is classified as obsolete and is not recommended for new designs. The NTP360N80S3Z is classified as "Not For New Designs," and the STI20N60M2-EP and STP22NM60N are in active production and suitable for new design implementations, subject to voltage and current requirement compatibility.

Q: How do gate charge differences affect circuit performance? A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The FCP220N80 has a gate charge of 105 nC, while substitutes range from 21.7 nC to 44 nC. Lower gate charge reduces switching losses and allows faster switching speeds. Circuit design must account for these differences in gate drive requirements and switching frequency performance.

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