FCP20N60FS Equivalent & Substitute Parts

Part Overview

The FCP20N60FS is an N-Channel 600V 20A MOSFET manufactured by onsemi in the SuperFET™ series, housed in a TO-220F-3 through-hole package. This device is classified as obsolete, indicating discontinuation from the manufacturer. The part delivers 208W maximum power dissipation and operates across a temperature range of -55°C to 150°C. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs, production continuity, and long-term component availability.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	20	A
Rds On (Max) @ 10V Gate Drive	190	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5	V
Gate Charge (Qg) @ 10V	98	nC
Power Dissipation (Max)	208	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package	TO-220-3	—

Substitute Part Grouping Explanation

Substitution of the FCP20N60FS is determined by the following critical parameters:

Voltage Rating (Vdss): The drain-to-source voltage must equal or exceed 600V. Substitute parts with higher voltage ratings (650V) are acceptable as they provide additional voltage margin.

Current Rating (Id): The continuous drain current must equal or exceed 20A at 25°C. Substitute parts with equal or higher current ratings maintain or improve current-handling capability.

On-State Resistance (Rds On): The maximum on-state resistance at 10V gate drive must not exceed 190mOhm to ensure equivalent switching losses and thermal performance.

Gate Threshold Voltage (Vgs(th)): The threshold voltage must fall within the range of 3.7V to 5V at the specified test current to ensure compatible gate drive requirements.

Package Type: All substitute parts must use TO-220-3 or equivalent through-hole packages to maintain mechanical and thermal interface compatibility.

Operating Temperature: All substitute parts must support the full -55°C to 150°C operating range.

Product Status: Active product status ensures long-term availability and manufacturing support compared to the obsolete FCP20N60FS.

Parameter Comparison

Parameter	FCP20N60FS (Main)	AOT25S65L	IPP60R160P6XKSA1	IPP60R180P7XKSA1	SIHP22N60AE-GE3	STP20N65M5	STP26NM60N	TK16E60W,S1VX
Manufacturer	onsemi	Alpha & Omega	Infineon	Infineon	Vishay	STMicroelectronics	STMicroelectronics	Toshiba
Vdss (V)	600	650	600	650	600	650	600	600
Id @ 25°C (A)	20	25	23.8	18	20	18	20	15.8
Rds On (Max) @ 10V (mOhm)	190	190	160	180	180	190	165	190
Vgs(th) @ Test Current (V)	5 @ 250µA	4 @ 250µA	4.5 @ 750µA	4 @ 280µA	4 @ 250µA	5 @ 250µA	4 @ 250µA	3.7 @ 790µA
Gate Charge Qg @ 10V (nC)	98	26.4	44	25	96	45	60	38
Power Dissipation (Max) (W)	208	357	176	72	179	130	140	130
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	150	150
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active	Active	Active	Active	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitutes (Direct Equivalents):

SIHP22N60AE-GE3 (Vishay Siliconix) and STP26NM60N (STMicroelectronics) are the closest functional equivalents. Both devices match the FCP20N60FS in voltage rating (600V), current rating (20A), and on-state resistance (180–165mOhm). Both are active products with ROHS3 compliance, ensuring long-term availability and regulatory alignment. SIHP22N60AE-GE3 provides identical power dissipation (179W) and gate charge characteristics (96nC), making it the most direct replacement. STP26NM60N offers improved gate charge performance (60nC) and lower on-state resistance (165mOhm), resulting in reduced switching losses.

Secondary Substitutes (Higher Current or Voltage Rating):

AOT25S65L (Alpha & Omega Semiconductor) provides enhanced specifications with 650V voltage rating and 25A current capability, delivering superior thermal performance (357W). This part is suitable for applications requiring additional design margin or higher current capacity.

IPP60R160P6XKSA1 (Infineon CoolMOS™ P6) offers 600V rating with 23.8A current and significantly lower on-state resistance (160mOhm), reducing conduction losses. This part is appropriate for efficiency-critical applications.

Substitutes with Trade-offs:

IPP60R180P7XKSA1 (Infineon CoolMOS™ P7) and STP20N65M5 (STMicroelectronics MDmesh™ V) provide 650V voltage ratings with reduced current ratings (18A). These parts are suitable for applications where voltage margin is prioritized over current capacity. Both feature significantly lower gate charge (25–45nC), reducing switching losses in high-frequency circuits.

TK16E60W,S1VX (Toshiba DTMOSIV) operates at 600V with 15.8A current and 190mOhm on-state resistance. This part is suitable for lower-current applications but does not provide current margin over the FCP20N60FS.

Compliance and Availability:

All recommended substitute parts carry ROHS3 compliance and active product status, ensuring regulatory conformance and manufacturing continuity. The FCP20N60FS obsolete status necessitates migration to active alternatives for new production and long-term supply chain stability.

Frequently Asked Questions (FAQ)

Q: Can I use a substitute part with a higher voltage rating than the FCP20N60FS?

A: Yes. Substitute parts with voltage ratings of 650V are fully compatible with applications designed for 600V operation. Higher voltage ratings provide additional design margin and do not degrade performance in 600V circuits.

Q: What is the minimum current rating required for a substitute part?

A: The substitute part must have a continuous drain current rating of at least 20A at 25°C to match the FCP20N60FS specification. Parts with higher current ratings (23.8A, 25A) provide additional thermal margin and are acceptable.

Q: Does on-state resistance affect substitution compatibility?

A: Yes. The on-state resistance (Rds On) directly impacts conduction losses and thermal performance. Substitute parts with Rds On values at or below 190mOhm maintain equivalent or improved efficiency. Lower Rds On values (160–165mOhm) reduce power dissipation and are preferred in efficiency-critical designs.

Q: Are all substitute parts available in TO-220-3 packaging?

A: Yes. All recommended substitute parts use TO-220-3 or equivalent through-hole packages, ensuring mechanical and thermal interface compatibility with existing PCB layouts and heat sinking arrangements.

Q: What is the significance of gate charge (Qg) in substitution?

A: Gate charge affects switching speed and gate drive power requirements. Substitute parts with lower gate charge values (25–60nC compared to 98nC) reduce switching losses and gate drive circuit stress, improving overall circuit efficiency. This is particularly beneficial in high-frequency switching applications.

Q: Can I use a substitute part with a lower current rating than 20A?

A: No. Substitute parts must maintain a continuous drain current rating of at least 20A to ensure adequate current-handling capability. Parts with lower ratings (15.8A, 18A) do not provide sufficient margin and may cause thermal stress or circuit failure under full-load conditions.

Q: Why is product status important when selecting a substitute?

A: Active product status ensures long-term manufacturing availability, consistent quality, and ongoing technical support from the manufacturer. The FCP20N60FS is obsolete, meaning production has ceased and future availability is uncertain. Active substitutes guarantee supply chain continuity for new designs and production runs.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All recommended substitute parts carry ROHS3 compliance certification, meeting current environmental and regulatory requirements for electronic components in most markets.

Q: What is the operating temperature range requirement for substitution?

A: Substitute parts must support the full -55°C to 150°C operating temperature range to maintain functional equivalence. All recommended substitutes meet this requirement, ensuring reliable operation across the specified thermal envelope.

Q: How do I determine which substitute is best for my application?

A: Selection depends on application priorities. For direct replacement with minimal design changes, use SIHP22N60AE-GE3 or STP26NM60N. For efficiency-critical applications, select IPP60R160P6XKSA1 or IPP60R180P7XKSA1 for lower gate charge and on-state resistance. For applications requiring higher current capacity or thermal margin, use AOT25S65L.

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