FCP150N65F N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FCP150N65F is an N-Channel MOSFET manufactured by onsemi, rated for 650V drain-to-source voltage with 24A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration and belongs to the HiPerFET™ and Polar™ series. The FCP150N65F carries a product status of "Not For New Designs," indicating that onsemi has discontinued this component for new applications. Identifying equivalent and substitute parts is necessary to support existing designs, facilitate board redesigns, or transition to actively supported alternatives while maintaining electrical and mechanical compatibility.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	24	A (Tc)
On-State Resistance (Rds On) @ 12A, 10V	150	mOhm
Gate Threshold Voltage (Vgs(th)) @ 2.4mA	5	V
Gate Charge (Qg) @ 10V	93	nC
Power Dissipation (Max)	298	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-220-3	Through Hole
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the FCP150N65F is determined by alignment across the following critical parameters:

Voltage Rating (Vdss): The substitute must support 650V or higher drain-to-source voltage to maintain circuit safety margins and prevent device breakdown.

Continuous Drain Current (Id): The substitute must deliver at least 24A continuous current at 25°C to satisfy load requirements without thermal derating.

On-State Resistance (Rds On): Lower or comparable Rds On values ensure efficient switching operation and minimize conduction losses. The FCP150N65F specifies 150 mOhm at 12A, 10V.

Gate Charge (Qg): Lower gate charge reduces switching losses and driver power consumption. The FCP150N65F specifies 93 nC at 10V.

Package and Mounting: All substitutes must use TO-220-3 through-hole packaging to ensure mechanical and thermal compatibility with existing PCB layouts and heatsink assemblies.

Operating Temperature Range: The substitute must support the full -55°C to 150°C operating range to maintain reliability across all environmental conditions.

Technology Type: Substitutes may include both traditional MOSFET (Metal Oxide) and GaNFET (Gallium Nitride) technologies, provided all electrical parameters remain compatible.

Parameter Comparison

Parameter	FCP150N65F (onsemi)	IPP60R190P6XKSA1 (Infineon)	STP21N65M5 (STMicroelectronics)	STP28N65M2 (STMicroelectronics)	STP31N65M5 (STMicroelectronics)	TPH3206PD (Transphorm)
Vdss (V)	650	600	650	650	650	600
Id @ 25°C (A)	24	20.2	17	20	22	17
Rds On @ 10V (mOhm)	150 @ 12A	190 @ 7.6A	190 @ 8.5A	180 @ 10A	148 @ 11A	180 @ 11A, 8V
Qg @ 10V (nC)	93	11	50	35	45	9.3 @ 4.5V
Power Dissipation (W)	298	151	125	170	150	96
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 175
Package	TO-220-3	PG-TO220-3	TO-220	TO-220	TO-220	TO-220AB
Technology	MOSFET	MOSFET	MOSFET	MOSFET	MOSFET	GaNFET
Product Status	Not For New Designs	Active	Active	Active	Active	Not For New Designs
RoHS Compliance	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	RoHS Compliant

Engineering Selection Recommendations

Primary Substitutes (Active Product Status):

The STP31N65M5 (STMicroelectronics) is the closest functional equivalent to the FCP150N65F. It maintains the 650V voltage rating, delivers 22A continuous current (within 92% of the original 24A specification), and achieves 148 mOhm on-state resistance at 11A—nearly identical to the FCP150N65F at 150 mOhm. The STP31N65M5 carries Active product status, ensuring long-term availability and support. Gate charge is reduced to 45 nC, improving switching efficiency. This device is recommended for direct replacement in new board designs and redesigns of existing applications.

The STP28N65M2 (STMicroelectronics) provides an alternative with 650V rating and 20A continuous current. On-state resistance of 180 mOhm is slightly higher than the FCP150N65F, but gate charge of 35 nC offers superior switching performance. This device is suitable for applications where current demand does not exceed 20A and switching losses are a primary concern.

Secondary Substitutes (Reduced Current Rating):

The STP21N65M5 (STMicroelectronics) maintains 650V voltage rating but delivers only 17A continuous current, representing a 29% reduction from the FCP150N65F specification. This device is appropriate only for applications where the actual load current does not exceed 17A. On-state resistance of 190 mOhm and gate charge of 50 nC are acceptable trade-offs for lower current applications.

Voltage-Reduced Substitutes:

The IPP60R190P6XKSA1 (Infineon) operates at 600V, which is 50V below the FCP150N65F rating. This device is suitable only for applications where the actual circuit voltage does not exceed 600V. Continuous current of 20.2A and on-state resistance of 190 mOhm provide reasonable performance, but the reduced voltage margin limits applicability. This device carries Active product status.

Alternative Technology (GaNFET):

The TPH3206PD (Transphorm) is a GaNFET device rated for 600V and 17A. While it offers significantly lower gate charge (9.3 nC) and superior switching characteristics, it carries "Not For New Designs" status and operates at reduced voltage (600V) and current (17A) compared to the FCP150N65F. GaNFET technology requires careful driver circuit design and may introduce compatibility issues with existing gate drive circuits designed for traditional MOSFETs. This device is not recommended for new designs.

Compliance and Certification:

All recommended substitutes comply with ROHS3 or equivalent RoHS standards and carry REACH Unaffected status, matching the environmental compliance profile of the FCP150N65F. All devices are classified under ECCN EAR99 and HTSUS 8541.29.0095.

Frequently Asked Questions (FAQ)

Q: Can the STP31N65M5 directly replace the FCP150N65F without circuit modifications?

A: The STP31N65M5 is mechanically and electrically compatible with the FCP150N65F. Both devices use TO-220-3 through-hole packaging, support 650V operation, and deliver comparable on-state resistance. The STP31N65M5 provides 22A continuous current versus the FCP150N65F's 24A, representing an 8% reduction. For applications operating below 22A, direct substitution is possible. For applications requiring the full 24A specification, thermal analysis and current derating must be evaluated.

Q: Why does the IPP60R190P6XKSA1 have lower gate charge than the FCP150N65F?

A: Gate charge is determined by the semiconductor die size, oxide thickness, and manufacturing process. The IPP60R190P6XKSA1 uses Infineon's CoolMOS™ P6 technology, which employs advanced process optimization to reduce gate charge to 11 nC. Lower gate charge reduces switching losses and driver power consumption but does not affect on-state conduction characteristics. The trade-off is that the IPP60R190P6XKSA1 operates at 600V rather than 650V.

Q: Is the TPH3206PD GaNFET suitable for replacing the FCP150N65F in existing designs?

A: The TPH3206PD uses GaNFET technology, which differs fundamentally from the traditional MOSFET technology of the FCP150N65F. GaNFET devices exhibit different gate drive requirements, switching behavior, and parasitic characteristics. Additionally, the TPH3206PD carries "Not For New Designs" status and operates at reduced voltage (600V) and current (17A). Substitution requires comprehensive circuit redesign and validation. GaNFET substitution is not recommended for existing designs without extensive engineering evaluation.

Q: What is the significance of the TO-220-3 package designation?

A: TO-220-3 is a through-hole package with three leads: Gate, Drain, and Source. All substitute parts listed use TO-220-3 or compatible variants (TO-220, TO-220AB, PG-TO220-3), ensuring mechanical compatibility with existing PCB footprints and heatsink mounting hardware. Package compatibility eliminates the need for PCB redesign when substituting devices.

Q: Can I use the STP21N65M5 if my application requires only 17A?

A: Yes. The STP21N65M5 is rated for 17A continuous current at 25°C and maintains the 650V voltage specification. If your application current requirement does not exceed 17A, this device provides a valid substitution. However, verify that the actual operating current remains below 17A under all load conditions, including transient peaks and thermal derating scenarios.

Q: How do I determine which substitute is best for my application?

A: Identify the three critical parameters for your application: (1) required continuous drain current at 25°C, (2) required drain-to-source voltage, and (3) acceptable on-state resistance and switching losses. Match these requirements to the substitute part specifications. For applications requiring 650V and 20A or higher, the STP31N65M5 or STP28N65M2 are recommended. For applications requiring 600V operation, the IPP60R190P6XKSA1 is acceptable. Verify that the substitute's power dissipation rating accommodates your thermal design.

Q: Are all substitute parts RoHS compliant?

A: Yes. All substitute parts listed carry RoHS3 or equivalent RoHS compliance certification, matching the environmental compliance profile of the FCP150N65F. All devices are REACH Unaffected and classified under ECCN EAR99.

Q: What is the difference between "Active" and "Not For New Designs" product status?

A: "Active" status indicates that the manufacturer continues to produce and support the device for new applications. "Not For New Designs" status indicates that the manufacturer has discontinued the device for new applications but may continue limited production for existing customer support. For long-term design stability, select substitutes with "Active" status: STP31N65M5, STP28N65M2, STP21N65M5, and IPP60R190P6XKSA1.

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