FCP11N60N-F102 Equivalent & Substitute Parts

Part Overview

The FCP11N60N-F102 is an N-Channel MOSFET manufactured by onsemi, rated for 600V drain-to-source voltage with 10.8A continuous drain current at 25°C. This device features a through-hole TO-220F package and is designed for high-voltage switching applications. The part is currently obsolete, necessitating identification of functionally equivalent alternatives from active product lines. Substitute parts must maintain compatibility across critical electrical parameters including voltage rating, current capacity, gate charge characteristics, and thermal performance while supporting the same through-hole mounting configuration.

Key Parameters

Parameter	FCP11N60N-F102	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	600	V
Current - Continuous Drain (Id) @ 25°C	10.8	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	299	mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	35.6	nC @ 10V
Vgs (Max)	±30	V
Input Capacitance (Ciss) (Max) @ Vds	1505	pF @ 100V
Power Dissipation (Max)	94	W (Tc)
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3 Full Pack	—
RoHS Status	ROHS3 Compliant	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the FCP11N60N-F102 is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The main part operates at 600V Vdss. Substitute parts must maintain a minimum 600V rating; parts rated at 650V or higher are acceptable as they provide equivalent or superior voltage withstand capability.

Current Rating Compatibility: The main part delivers 10.8A continuous drain current. Substitute parts rated at 11A or higher satisfy this requirement, as they can handle the specified current load.

Gate Charge (Qg) Characteristics: The main part specifies 35.6 nC maximum gate charge at 10V. Substitute parts with lower gate charge values (such as 11 nC to 30 nC) indicate improved switching performance and reduced driver requirements, while higher values remain acceptable if within reasonable design margins.

On-Resistance (Rds On): The main part specifies 299 mOhm maximum at 5.4A, 10V. Substitute parts with comparable or lower on-resistance values maintain thermal performance and power dissipation characteristics.

Threshold Voltage (Vgs(th)): The main part specifies 4V maximum at 250µA. Substitute parts with threshold voltages between 3.5V and 4.5V are compatible with standard gate drive circuits.

Package and Mounting: All substitute parts must use through-hole TO-220 family packaging (TO-220F, TO-220FP, or TO-220SIS) to ensure mechanical compatibility with existing PCB layouts.

Thermal Performance: The main part dissipates 94W maximum. Substitute parts with lower power dissipation ratings (25W to 50W) indicate improved efficiency; higher ratings are acceptable if thermal management is adequate.

Compliance: All substitute parts must maintain RoHS3 compliance and REACH unaffected status to satisfy regulatory requirements.

Parameter Comparison

Parameter	FCP11N60N-F102	AOTF11S60L	AOTF11S65L	CDM22011-600LRFP SL	IXTP12N65X2M	SIHA14N60E-E3	STF13NM60N	STF18N65M2	TK11A65W,S5X
Manufacturer	onsemi	Alpha & Omega	Alpha & Omega	Central Semiconductor	IXYS	Vishay Siliconix	STMicroelectronics	STMicroelectronics	Toshiba
Vdss (V)	600	600	650	600	650	600	600	650	650
Id @ 25°C (A)	10.8	11	11	11	12	13	11	12	11.1
Rds On (Max) (mOhm)	299	399	399	360	300	309	360	330	390
Vgs(th) (Max) (V)	4	4.1	4	4	4.5	4	4	4	3.5
Qg (Max) (nC)	35.6	11	13.2	23.05	17.7	64	30	20	25
Ciss (Max) (pF)	1505	545	646	763	1100	1205	790	770	890
Power Dissipation (Max) (W)	94	38	31	25	40	147	25	25	35
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	to 150
Package	TO-220-3 Full Pack	TO-220-3 Full Pack	TO-220-3 Full Pack	TO-220-3 Full Pack	TO-220-3 Full Pack, Isolated Tab	TO-220-3 Full Pack	TO-220-3 Full Pack	TO-220-3 Full Pack	TO-220-3 Full Pack
Product Status	Obsolete	Active	Active	Active	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitutes (600V Rating, 11A Current Class):

The STF13NM60N, CDM22011-600LRFP SL, and AOTF11S60L are direct functional equivalents to the FCP11N60N-F102. All three maintain the 600V voltage rating and 11A current specification. The STF13NM60N offers the highest inventory availability (85,270 units) and is manufactured by STMicroelectronics with active product status. The CDM22011-600LRFP SL provides comparable electrical characteristics with lower gate charge (23.05 nC) and reduced power dissipation (25W), indicating improved switching efficiency. The AOTF11S60L from Alpha & Omega Semiconductor delivers the lowest gate charge (11 nC) among 600V options, supporting faster switching transitions.

Secondary Substitutes (650V Rating, 11-12A Current Class):

The AOTF11S65L, IXTP12N65X2M, STF18N65M2, and TK11A65W,S5X provide higher voltage margin at 650V while maintaining or exceeding current capacity. The IXTP12N65X2M delivers 12A at 650V with on-resistance of 300 mOhm, closely matching the main part's performance. The STF18N65M2 offers reduced power dissipation (25W) and gate charge (20 nC), indicating superior thermal and switching characteristics. These parts are suitable for applications where higher voltage headroom is beneficial.

Higher Current Alternative (650V Rating, 18A Current Class):

The AOTF18N65 provides significantly higher current capacity (18A) at 650V, suitable for applications requiring increased current handling. This part maintains compatibility with the TO-220-3 package and offers active product status.

Higher Current Alternative (600V Rating, 13A Current Class):

The SIHA14N60E-E3 from Vishay Siliconix delivers 13A at 600V with the highest power dissipation rating (147W) among available substitutes, indicating superior thermal performance for high-power applications. This part is suitable for designs requiring maximum thermal headroom.

All recommended substitutes maintain RoHS3 compliance, REACH unaffected status, and active product status, ensuring long-term availability and regulatory compliance.

Frequently Asked Questions (FAQ)

Q: Can the AOTF11S65L (650V) be used as a direct replacement for the FCP11N60N-F102 (600V)?

A: Yes. The AOTF11S65L operates at 650V, which exceeds the 600V requirement of the main part. Higher voltage ratings provide additional safety margin in high-voltage switching applications. All other critical parameters (11A current, gate charge, threshold voltage, operating temperature range) are compatible.

Q: What is the significance of gate charge (Qg) differences between substitute parts?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge values (such as 11 nC in AOTF11S60L versus 35.6 nC in the main part) reduce driver power requirements and enable faster switching transitions. Higher gate charge values require more driver current but do not prevent substitution if the gate driver circuit is adequately rated.

Q: Are isolated tab and non-isolated tab TO-220 packages interchangeable?

A: TO-220 packages with isolated tabs (such as IXTP12N65X2M) feature electrical isolation between the tab and the drain connection, whereas standard TO-220F packages do not. Isolated tab variants are suitable for applications requiring isolated heat sinking. Non-isolated tab parts can be used in place of isolated tab parts if isolation is not required. Isolated tab parts cannot replace non-isolated tab parts in designs that depend on tab-to-drain connection.

Q: Which substitute part offers the best thermal performance?

A: The SIHA14N60E-E3 specifies the highest power dissipation rating (147W), indicating superior thermal performance. The STF13NM60N, CDM22011-600LRFP SL, STF18N65M2, and AOTF11S60L all specify 25W power dissipation, representing improved efficiency compared to the main part's 94W rating.

Q: Can I use a 650V-rated part in a 600V application?

A: Yes. A 650V-rated MOSFET can be used in a 600V application. The higher voltage rating provides additional safety margin and does not degrade performance. All electrical and thermal characteristics remain valid within the specified operating conditions.

Q: What is the difference between Tc and Ta temperature specifications?

A: Tc denotes case temperature, while Ta denotes ambient temperature. Both the main part and most substitute parts specify operating temperature range as -55°C to 150°C (TJ), referring to junction temperature. The TK11A65W,S5X specifies maximum junction temperature of 150°C without a lower limit, which is compatible with the main part's temperature range.

Q: Are all substitute parts available in the same packaging?

A: All substitute parts use through-hole TO-220 family packaging (TO-220F, TO-220FP, or TO-220SIS). These packages are mechanically compatible with standard TO-220 PCB footprints. The IXTP12N65X2M features an isolated tab variant, which requires verification of PCB layout compatibility if isolation is not required.

Q: Which substitute part has the lowest on-resistance?

A: The IXTP12N65X2M specifies 300 mOhm on-resistance at 6A, 10V, which is lower than the main part's 299 mOhm at 5.4A, 10V. This represents improved conduction efficiency and reduced power dissipation during switching.

Q: Do all substitute parts maintain RoHS3 compliance?

A: Yes. All substitute parts listed are RoHS3 compliant and REACH unaffected, meeting regulatory requirements for electronic component procurement and use.

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