FCP11N60 N-Channel 600V 11A MOSFET Equivalent & Substitute Parts

Part Overview

The FCP11N60 is an N-Channel 600V 11A MOSFET manufactured by onsemi in the SuperFET™ series, housed in a TO-220-3 through-hole package. This device is rated for 125W power dissipation and operates across a temperature range of -55°C to 150°C. The part carries a "Not For New Designs" product status, indicating that onsemi has discontinued active development for this component. Identifying equivalent and substitute parts is necessary to support existing designs, facilitate production continuity, and enable migration to active product lines where applicable.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	11	A
Rds On (Max) @ 5.5A, 10V	380	mOhm
Gate Charge (Qg) @ 10V	52	nC
Power Dissipation (Max)	125	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the FCP11N60 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 600V minimum
Continuous Drain Current (Id): 11A minimum at 25°C
Gate Drive Voltage: 10V
Rds On (Max): 380mOhm or lower at specified conditions
Package Type: TO-220-3 through-hole configuration
Operating Temperature Range: -55°C to 150°C minimum

Substitution Categories:

Parametric Equivalent: FCP11N60F matches all electrical specifications and package requirements identically to the main part. This variant is manufactured by onsemi within the same SuperFET™ series and serves as a direct replacement.

Direct Manufacturer Equivalent: STP13N60M2 (STMicroelectronics) meets or exceeds all critical electrical parameters. While power dissipation is rated at 110W (versus 125W), the device maintains identical Vdss, Id, Rds On, and package specifications. Product status is Active, supporting long-term availability.

Similar Substitutes: Parts including AOT11S60L, IXFP10N60P, IXFP22N60P3, IXKP13N60C5, IXTP12N65X2, STP13NM60N, and STP13NM60ND satisfy the core electrical requirements of 600V or higher Vdss and 11A or higher continuous drain current in TO-220-3 packages. These devices exhibit variations in gate charge, input capacitance, and power dissipation ratings, but remain functionally compatible within the specified parameter envelope.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Qg @ 10V (nC)	Power Diss. (W)	Package	Status
FCP11N60	onsemi	600	11	380	52	125	TO-220-3	Not For New Designs
FCP11N60F	onsemi	600	11	380	52	125	TO-220-3	Not For New Designs
STP13N60M2	STMicroelectronics	600	11	380	17	110	TO-220-3	Active
AOT11S60L	Alpha & Omega Semiconductor	600	11	399	11	178	TO-220-3	Not For New Designs
IXFP10N60P	IXYS	600	10	740	32	200	TO-220-3	Active
IXFP22N60P3	IXYS	600	22	360	38	500	TO-220-3	Active
IXKP13N60C5	IXYS	600	13	300	30	—	TO-220-3	Active
IXTP12N65X2	IXYS	650	12	300	17	180	TO-220-3	Active
STP13NM60N	STMicroelectronics	600	11	360	30	90	TO-220-3	Active
STP13NM60ND	STMicroelectronics	600	11	380	24.5	109	TO-220-3	Active

Engineering Selection Recommendations

For Direct Replacement in Existing Designs:

FCP11N60F is the optimal choice when component-level compatibility is required. As a parametric equivalent from onsemi, it maintains identical electrical specifications and package configuration. Both parts carry "Not For New Designs" status, indicating equivalent lifecycle support.

For Long-Term Production Support:

STP13N60M2 (STMicroelectronics, Active status) and STP13NM60ND (STMicroelectronics, Active status) are recommended for designs requiring sustained component availability. Both devices meet the core electrical requirements of 600V Vdss, 11A continuous drain current, and 380mOhm maximum Rds On. STP13NM60ND provides the closest electrical match, including identical Rds On specification at the reference condition. STP13N60M2 offers reduced gate charge (17nC versus 52nC), which may improve switching performance in certain applications.

For Applications Requiring Enhanced Performance:

IXTP12N65X2 (IXYS, Active status) provides 650V Vdss rating with 12A continuous drain current and 300mOhm Rds On, supporting higher voltage margins and improved thermal performance. IXFP22N60P3 (IXYS, Active status) offers 22A continuous drain current with 360mOhm Rds On and 500W power dissipation, suitable for applications requiring higher current capacity.

Compliance Considerations:

All listed substitute parts maintain RoHS3 compliance and REACH Unaffected status, consistent with the main part. Moisture sensitivity levels vary; parts with MSL 1 (Unlimited) provide broader storage and handling flexibility compared to the main part (MSL Not Applicable).

Frequently Asked Questions (FAQ)

Q: Can FCP11N60F be used as a direct replacement for FCP11N60?

A: Yes. FCP11N60F is a parametric equivalent manufactured by onsemi with identical electrical specifications, gate charge, power dissipation rating, and TO-220-3 package configuration. Both parts carry "Not For New Designs" status.

Q: What is the primary difference between STP13N60M2 and STP13NM60ND?

A: Both devices meet the core electrical requirements of 600V Vdss, 11A continuous drain current, and 380mOhm Rds On. STP13N60M2 features reduced gate charge (17nC versus 24.5nC) and lower power dissipation (110W versus 109W). STP13NM60ND provides closer alignment to the original gate charge specification. Both are Active products from STMicroelectronics.

Q: Why is IXTP12N65X2 listed as a substitute despite having 650V Vdss instead of 600V?

A: IXTP12N65X2 meets all critical electrical parameters: 12A continuous drain current (exceeds 11A requirement), 300mOhm Rds On (better than 380mOhm), and TO-220-3 package. The higher Vdss rating (650V versus 600V) provides additional voltage margin and does not prevent substitution in 600V applications. The device is Active status from IXYS.

Q: Is the TO-220 package compatible with TO-220-3 footprints?

A: TO-220 and TO-220-3 refer to the same three-lead through-hole package configuration. Devices specified as TO-220 or TO-220-3 are mechanically and electrically interchangeable in standard TO-220-3 PCB layouts.

Q: What does "Not For New Designs" product status mean?

A: This designation indicates that the manufacturer has discontinued active development and support for the component. Existing inventory may remain available, but long-term supply cannot be guaranteed. For new designs or production requiring sustained availability, Active status products such as STP13N60M2, STP13NM60ND, or IXTP12N65X2 are recommended.

Q: How does gate charge (Qg) affect circuit performance?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (such as 17nC in STP13N60M2 versus 52nC in FCP11N60) reduces switching losses and enables faster switching speeds. Selection depends on the specific gate driver circuit and switching frequency requirements of the application.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts maintain RoHS3 compliance and REACH Unaffected status, consistent with the main FCP11N60 part.

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