FCP110N65F Equivalent & Substitute Parts

Part Overview

The FCP110N65F is an N-Channel 650V 35A MOSFET manufactured by onsemi in the FRFET® SuperFET® II series, housed in a TO-220-3 through-hole package. This device is classified as "Not For New Designs," indicating it has been superseded in onsemi's product portfolio. The 650V drain-to-source voltage rating and 35A continuous drain current make it suitable for high-voltage switching applications in power conversion and motor control circuits. Due to its discontinued status for new designs, equivalent and substitute parts from active product lines are necessary for ongoing production and maintenance applications.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	35	A
On-State Resistance (Rds On) @ 17.5A, 10V	110	mOhm
Gate Threshold Voltage (Vgs(th)) @ 3.5mA	5	V
Gate Charge (Qg) @ 10V	145	nC
Input Capacitance (Ciss) @ 100V	4895	pF
Power Dissipation (Max)	357	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the FCP110N65F is determined by matching critical electrical parameters within acceptable tolerances and ensuring compatible package configurations. The primary substitution criteria are:

Electrical Matching Parameters:

Drain-to-Source Voltage (Vdss): Must equal or exceed 650V
Continuous Drain Current (Id): Must equal or exceed 35A at 25°C
On-State Resistance (Rds On): Should be within ±20% of 110 mOhm to maintain thermal and efficiency characteristics
Gate Threshold Voltage (Vgs(th)): Must fall within the ±20V gate voltage specification
Operating Temperature Range: Must support -55°C to 150°C minimum

Package Compatibility:

Primary substitutes maintain TO-220-3 through-hole configuration for direct PCB mounting compatibility
Secondary substitutes in TO-247-3 package require mechanical redesign but offer identical electrical performance

Product Status Consideration:

Parametric equivalents from active product lines are prioritized to ensure long-term availability
Similar parts with lower voltage or current ratings are listed for applications with reduced requirements

Parameter Comparison

Parameter	FCP110N65F (Main)	FCH110N65F-F155	IPP60R099CPAAKSA1	IXKP35N60C5	STP30N65M5	STP35N60DM2	STP40N65M2
Manufacturer	onsemi	Fairchild Semiconductor	Infineon Technologies	IXYS	STMicroelectronics	STMicroelectronics	STMicroelectronics
Vdss (V)	650	650	600	600	650	600	650
Id @ 25°C (A)	35	35	31	35	22	28	32
Rds On @ 10V (mOhm)	110 @ 17.5A	110 @ 17.5A	105 @ 18A	100 @ 18A	139 @ 11A	110 @ 14A	99 @ 16A
Vgs(th) (V)	5 @ 3.5mA	5 @ 3.5mA	3.5 @ 1.2mA	3.9 @ 1.2mA	5 @ 250µA	5 @ 250µA	4 @ 250µA
Qg @ 10V (nC)	145	145	80	70	64	54	56.5
Ciss @ 100V (pF)	4895	4895	2800	2800	2880	2400	2355
Power Dissipation (W)	357	357	255	—	140	210	250
Operating Temp Range (°C)	-55 to 150	-55 to 150	-40 to 150	-40 to 150	to 150	-55 to 150	to 150
Package	TO-220-3	TO-247-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Not For New Designs	Active	Obsolete	Active	Active	Active	Active
RoHS Compliance	ROHS3	—	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

The FCH110N65F-F155 from Fairchild Semiconductor is the primary parametric equivalent. It matches the FCP110N65F across all critical electrical specifications: 650V Vdss, 35A continuous drain current, 110 mOhm Rds On, and 145 nC gate charge. The device maintains identical thermal performance at 357W maximum power dissipation and supports the full -55°C to 150°C operating temperature range. The FCH110N65F-F155 is classified as Active, ensuring long-term availability. The only mechanical difference is the TO-247-3 package, which requires PCB layout modification but provides superior thermal performance through increased lead surface area. This part is suitable for direct electrical substitution with mechanical redesign consideration.

Primary TO-220-3 Alternatives (Same Package):

The STP40N65M2 from STMicroelectronics provides the closest match within the TO-220-3 package. It maintains 650V Vdss and 32A continuous drain current (within 91% of the original 35A specification), with 99 mOhm Rds On (10% improvement over the original 110 mOhm). The STP40N65M2 is Active and ROHS3 compliant. Gate charge is reduced to 56.5 nC, improving switching speed. Power dissipation is rated at 250W, which is lower than the original 357W but remains adequate for most applications. This part is recommended for applications where package compatibility is critical.

The IXKP35N60C5 from IXYS matches the 35A drain current specification exactly and maintains TO-220-3 packaging. However, it operates at 600V Vdss (50V lower than the original specification), making it suitable only for applications with reduced voltage requirements. The device offers superior Rds On at 100 mOhm and lower gate charge at 70 nC. Product status is Active with ROHS3 compliance.

Secondary Alternatives (Reduced Current Rating):

The STP30N65M5 from STMicroelectronics maintains 650V Vdss but provides only 22A continuous drain current (63% of the original 35A specification). This part is suitable for applications with lower current demands. It is Active and ROHS3 compliant with improved gate charge characteristics at 64 nC.

The STP35N60DM2 from STMicroelectronics operates at 600V Vdss with 28A continuous drain current (80% of the original specification). It is Active and ROHS3 compliant, supporting the full -55°C to 150°C temperature range.

Obsolete Parts (Not Recommended):

The IPP60R099CPAAKSA1 from Infineon Technologies is classified as Obsolete and should not be selected for new applications or long-term production commitments, despite meeting reduced electrical specifications (600V, 31A).

Frequently Asked Questions (FAQ)

Q: Can the FCH110N65F-F155 be used as a direct drop-in replacement for the FCP110N65F?

A: The FCH110N65F-F155 is electrically identical to the FCP110N65F across all critical parameters. However, it uses a TO-247-3 package instead of TO-220-3, requiring PCB layout modification. The TO-247-3 package provides superior thermal performance through increased lead surface area and is mechanically compatible with standard TO-247 footprints. No circuit redesign is necessary; only PCB layout changes are required.

Q: What is the minimum voltage rating required for a substitute part?

A: Substitute parts must have a Drain-to-Source Voltage (Vdss) rating equal to or greater than 650V to maintain the original design margin. Parts rated at 600V (such as IXKP35N60C5 or STP35N60DM2) operate at reduced voltage headroom and are suitable only for applications with confirmed maximum operating voltages below 600V. Using a lower-rated device in a 650V application risks device failure.

Q: Can I use the STP30N65M5 if my application requires 35A continuous current?

A: No. The STP30N65M5 is rated for only 22A continuous drain current, which is 63% of the FCP110N65F specification. Using this part in an application requiring 35A will cause excessive junction temperature rise, reduced device lifetime, and potential thermal runaway. Current rating must equal or exceed the application requirement.

Q: Why do some substitute parts have lower gate charge values?

A: Gate charge (Qg) represents the total charge required to switch the device from off to on state. Lower gate charge values (such as 56.5 nC in the STP40N65M2 versus 145 nC in the FCP110N65F) indicate faster switching speed and reduced gate drive power requirements. This is a beneficial characteristic that improves circuit efficiency. However, gate drive circuits must be verified to ensure compatibility with the lower charge requirement.

Q: Are all substitute parts RoHS3 compliant?

A: All recommended Active substitute parts (FCH110N65F-F155, IXKP35N60C5, STP30N65M5, STP35N60DM2, STP40N65M2) are ROHS3 compliant. The obsolete IPP60R099CPAAKSA1 is also ROHS3 compliant but should not be selected due to its discontinued status. Compliance certification ensures the parts meet environmental and hazardous substance restrictions for regulated markets.

Q: What is the difference between the STP40N65M2 and STP35N60DM2?

A: The STP40N65M2 maintains 650V Vdss (matching the original FCP110N65F) with 32A continuous current and 99 mOhm Rds On. The STP35N60DM2 operates at 600V Vdss with 28A continuous current and 110 mOhm Rds On (identical to the original). The STP40N65M2 is preferred for applications requiring the full 650V voltage rating, while the STP35N60DM2 is suitable for 600V maximum applications and provides identical on-state resistance characteristics.

Q: Can I parallel multiple substitute parts to achieve higher current capacity?

A: Paralleling MOSFETs is possible but requires careful circuit design to ensure equal current distribution among devices. Rds On matching between parallel devices is critical; devices with different on-state resistances will not share current equally, causing thermal stress on lower-resistance devices. Consult device datasheets for paralleling guidelines and thermal management requirements before implementing this approach.

Q: Why is the FCP110N65F marked as "Not For New Designs"?

A: This designation indicates that onsemi has superseded this part in their product portfolio and recommends using newer alternatives for new applications. Existing inventory remains available for maintenance and legacy system support. The FCH110N65F-F155 from Fairchild Semiconductor serves as the recommended replacement for new designs, offering identical electrical performance with active product status and guaranteed long-term availability.

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