FCP104N60 N-Channel MOSFET 600V 37A Equivalent & Substitute Parts

Part Overview

The FCP104N60 is an N-Channel MOSFET manufactured by onsemi, rated for 600V drain-to-source voltage with 37A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration and belongs to the SuperFET® II series. The part is classified as Not For New Designs, indicating it has been superseded in onsemi's product portfolio. Equivalent and substitute parts are necessary for applications requiring continued supply, design flexibility, or performance optimization within the specified electrical and mechanical parameters.

Substiute Parts

FCP104N60
onsemiIn Stock: 2216FCP104N60 Datasheet
FCP104N60
Current Part
STP33N60DM2
STMicroelectronicsIn Stock: 9209STP33N60DM2 Datasheet
STP33N60DM2
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STP34N65M5
STMicroelectronicsIn Stock: 9827STP34N65M5 Datasheet
STP34N65M5
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TK25E60X,S1X
Toshiba Semiconductor and StorageIn Stock: 1060TK25E60X,S1X Datasheet
TK25E60X,S1X
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Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 37 A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs 104 mOhm @ 18.5A, 10V mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id 3.5 V @ 250µA
Gate Charge (Qg Max) @ Vgs 82 nC @ 10V
Power Dissipation (Max) 357 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-220-3 Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the FCP104N60 is determined by the following critical parameters:

Electrical Compatibility Criteria:

  • Drain-to-Source Voltage (Vdss) must equal or exceed 600V
  • Continuous Drain Current (Id) must meet or exceed application requirements
  • On-State Resistance (Rds On) must be compatible with thermal and switching loss budgets
  • Gate Threshold Voltage (Vgs(th)) must fall within acceptable drive circuit specifications
  • Gate Charge (Qg) affects switching speed and driver requirements
  • Power Dissipation capability must support thermal design

Mechanical Compatibility Criteria:

  • Package type must be TO-220-3 through-hole configuration
  • Pin configuration must be compatible with existing PCB layouts

Compliance Criteria:

  • RoHS3 compliance required
  • REACH compliance status must be unaffected or compliant

The three substitute parts listed below meet these criteria with variations in current rating, power dissipation, and gate charge characteristics.

Parameter Comparison

Parameter FCP104N60 (onsemi) STP33N60DM2 (STMicroelectronics) STP34N65M5 (STMicroelectronics) TK25E60X,S1X (Toshiba)
Manufacturer onsemi STMicroelectronics STMicroelectronics Toshiba Semiconductor and Storage
Vdss (V) 600 600 650 600
Id @ 25°C (A) 37 (Tc) 24 (Tc) 28 (Tc) 25 (Ta)
Rds On Max @ Id, Vgs (mOhm) 104 @ 18.5A, 10V 130 @ 12A, 10V 110 @ 14A, 10V 125 @ 7.5A, 10V
Vgs(th) Max @ Id (V) 3.5 @ 250µA 5 @ 250µA 5 @ 250µA 3.5 @ 1.2mA
Qg Max @ Vgs (nC) 82 @ 10V 43 @ 10V 62.5 @ 10V 40 @ 10V
Power Dissipation Max (W) 357 (Tc) 190 (Tc) 190 (Tc) 180 (Tc)
Operating Temperature (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150
Package TO-220-3 TO-220-3 TO-220-3 TO-220-3
Product Status Not For New Designs Active Active Active
RoHS3 Compliance Compliant Compliant Compliant Compliant

Engineering Selection Recommendations

STP33N60DM2 (STMicroelectronics): This substitute is suitable for applications where the continuous drain current requirement does not exceed 24A. The part features lower gate charge (43 nC) compared to the FCP104N60, resulting in faster switching characteristics and reduced driver power consumption. Power dissipation is rated at 190W, which is lower than the original part. The STP33N60DM2 maintains 600V Vdss rating and is in Active product status with full RoHS3 compliance. This part is appropriate for designs prioritizing switching speed and driver efficiency over maximum current capacity.

STP34N65M5 (STMicroelectronics): This substitute offers 650V Vdss rating, providing additional voltage margin above the 600V specification of the FCP104N60. Continuous drain current is rated at 28A, and on-state resistance is 110 mOhm at 14A, 10V. Gate charge is 62.5 nC, intermediate between the other substitutes. Power dissipation is 190W. The STP34N65M5 is in Active product status with full RoHS3 compliance. This part is suitable for applications requiring higher voltage headroom while maintaining moderate current capacity.

TK25E60X,S1X (Toshiba Semiconductor and Storage): This substitute maintains the 600V Vdss rating and provides 25A continuous drain current. Gate threshold voltage matches the FCP104N60 at 3.5V, facilitating compatibility with existing gate drive circuits. Gate charge is 40 nC, the lowest among all substitutes, enabling the fastest switching performance. Power dissipation is 180W. The TK25E60X,S1X is in Active product status with full RoHS3 compliance. This part is appropriate for applications requiring low gate charge and fast switching with moderate current requirements.

All three substitutes are in Active product status, ensuring long-term availability and supply chain stability compared to the FCP104N60 (Not For New Designs status).

Frequently Asked Questions (FAQ)

Q: Can the STP33N60DM2 directly replace the FCP104N60 in all applications?

A: The STP33N60DM2 is electrically compatible for applications where continuous drain current does not exceed 24A. The FCP104N60 is rated for 37A, so applications requiring the full 37A rating require either the STP34N65M5 or TK25E60X,S1X. All three substitutes share the same TO-220-3 package and 600V (or higher) Vdss rating, ensuring mechanical and electrical compatibility within their respective current ratings.

Q: What is the significance of gate charge (Qg) differences among these parts?

A: Gate charge directly affects switching speed and gate driver power consumption. The FCP104N60 has 82 nC gate charge, while the TK25E60X,S1X has 40 nC. Lower gate charge enables faster switching transitions and reduces driver power dissipation. Selection depends on whether the application prioritizes switching speed or maximum current capacity.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The FCP104N60 and all three substitute parts (STP33N60DM2, STP34N65M5, and TK25E60X,S1X) are RoHS3 compliant. All parts are also REACH unaffected or compliant, meeting environmental regulatory requirements.

Q: Why does the FCP104N60 have higher power dissipation than the substitutes?

A: The FCP104N60 is rated for 357W power dissipation at Tc, compared to 190W or 180W for the substitutes. This reflects the higher continuous current rating (37A) and lower on-state resistance (104 mOhm) of the original part. Substitutes with lower current ratings have proportionally lower power dissipation specifications.

Q: Can I use the STP34N65M5 in place of the FCP104N60 for higher voltage applications?

A: The STP34N65M5 has a 650V Vdss rating compared to the FCP104N60's 600V rating. This provides additional voltage margin and is suitable for applications with voltage transients or design margins requiring higher voltage headroom. However, the continuous drain current is 28A, lower than the FCP104N60's 37A rating.

Q: What is the difference between Tc and Ta temperature specifications?

A: Tc refers to case temperature, while Ta refers to ambient temperature. The TK25E60X,S1X specifies 25A continuous drain current at Ta (ambient), whereas the FCP104N60 and other parts specify current at Tc (case). This distinction affects thermal design calculations and actual current capacity under specific thermal conditions.

Q: Are the pin configurations identical across all four parts?

A: All four parts use the TO-220-3 through-hole package with identical pin configuration (Gate, Drain, Source). PCB layouts designed for the FCP104N60 are mechanically compatible with all three substitutes without modification.

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