FCD900N60Z Equivalent & Substitute Parts

Part Overview

The FCD900N60Z is an N-Channel 600V 4.5A MOSFET manufactured by onsemi in the SuperFET® II series, housed in a TO-252AA surface mount package. This device is classified as "Not For New Designs," indicating it has reached end-of-life status. The part delivers 52W maximum power dissipation and operates across a temperature range of -55°C to 150°C. Due to its discontinued design status, equivalent and substitute parts from active product lines are necessary for ongoing production requirements and new design implementations.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	4.5	A
Rds On (Max) @ 2.3A, 10V	900	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3.5	V
Gate Charge (Qg) @ 10V	17	nC
Power Dissipation (Max)	52	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-252-3 (DPAK)	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the FCD900N60Z is determined by strict alignment of electrical and mechanical parameters within the N-Channel MOSFET category. The critical parameters governing substitution eligibility are:

Electrical Parameters:

Drain to Source Voltage (Vdss): 600V minimum requirement
Continuous Drain Current (Id): 4.5A or greater
Rds On (Max): 900mOhm or lower at specified gate voltage
Gate Threshold Voltage (Vgs(th)): Within ±20V gate voltage specification
Operating Temperature: -55°C to 150°C minimum range

Mechanical Parameters:

Package Type: TO-252-3 (DPAK) or equivalent surface mount configurations
Mounting Type: Surface Mount
Lead Configuration: 2 Leads + Tab

Substitute parts are grouped into two categories:

Category A - Direct Equivalents (600V, 4.5A-5A range): Parts meeting or exceeding the FCD900N60Z specifications with minimal parameter variance, including STD7N60M2, STD7ANM60N, STD7NM60N, STB7ANM60N, PJMD900N60EC_L2_00001, and STD6N60M2.

Category B - Higher Performance Alternatives (600V, 5.5A+ or 800V): Parts with enhanced current handling or voltage ratings, including STD9N60M2, AOD4S60, and IPD80R1K0CEATMA1, suitable for applications requiring additional design margin.

Category C - Specialized Packages: R6006ANDTL with CPT3 package configuration, offering 6A current capability in alternative surface mount form factor.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Vgs(th) Max (V)	Qg Max (nC)	Pd Max (W)	Package	Status
FCD900N60Z	onsemi	600	4.5	900	3.5	17	52	TO-252AA	Not For New Designs
STD7N60M2	STMicroelectronics	600	5	950	4	8.8	60	DPAK	Active
STD7ANM60N	STMicroelectronics	600	5	900	4	14	45	DPAK	Active
STD7NM60N	STMicroelectronics	600	5	900	4	14	45	DPAK	Active
STB7ANM60N	STMicroelectronics	600	5	900	4	14	45	D2PAK	Active
STD6N60M2	STMicroelectronics	600	4.5	1200	4	8	60	DPAK	Active
PJMD900N60EC_L2_00001	Panjit International Inc.	600	5	900	4	8.8	47.5	TO-252AA	Active
STD9N60M2	STMicroelectronics	600	5.5	780	4	10	60	DPAK	Active
AOD4S60	Alpha & Omega Semiconductor Inc.	600	4	900	4.1	6	56.8	TO-252	Not For New Designs
R6006ANDTL	Rohm Semiconductor	600	6	1200	4.5	15	40	CPT3	Last Time Buy
IPD80R1K0CEATMA1	Infineon Technologies	800	5.7	950	3.9	31	83	PG-TO252-3	Active

Engineering Selection Recommendations

Primary Substitutes (Recommended for Active Designs):

STD7N60M2, STD7ANM60N, and STD7NM60N from STMicroelectronics represent the most direct functional equivalents. All three maintain 600V Vdss and 5A continuous drain current, with Rds On specifications within 50mOhm of the FCD900N60Z. These parts carry Active product status and are ROHS3 compliant with AEC-Q101 automotive qualification available for STD7ANM60N and STB7ANM60N variants. STMicroelectronics MDmesh™ II and MDmesh™ II Plus series provide proven reliability in high-volume production environments.

PJMD900N60EC_L2_00001 from Panjit International Inc. offers an exact TO-252AA package match with Active status. This part maintains identical Rds On specification (900mOhm) and operates within the same temperature range, making it suitable for direct board-level replacement.

Secondary Substitutes (Higher Performance Margin):

STD9N60M2 provides enhanced current capability (5.5A) with improved Rds On (780mOhm), delivering superior thermal performance at 60W power dissipation. This part is appropriate for applications requiring additional design margin or thermal headroom.

IPD80R1K0CEATMA1 from Infineon Technologies offers higher voltage rating (800V) with increased current (5.7A) and power dissipation (83W). This part is suitable for applications where voltage stress margin is critical, though it introduces higher gate charge (31nC) compared to the FCD900N60Z (17nC).

Alternative Package Consideration:

R6006ANDTL from Rohm Semiconductor provides 6A current capability in CPT3 surface mount package. This part carries Last Time Buy status and should be evaluated only for legacy system maintenance where package compatibility is non-negotiable.

Compliance and Certification:

All recommended substitutes maintain ROHS3 compliance and REACH unaffected status. STMicroelectronics parts STD7ANM60N and STB7ANM60N carry AEC-Q101 automotive qualification, suitable for automotive and industrial applications requiring formal qualification documentation.

Frequently Asked Questions (FAQ)

Q: Can STD7N60M2 directly replace FCD900N60Z in existing designs?

A: STD7N60M2 meets all electrical parameter requirements for direct substitution. Both parts operate at 600V Vdss with equivalent Rds On specifications (950mOhm vs. 900mOhm). The primary difference is package designation (DPAK vs. TO-252AA), which are mechanically and electrically equivalent. PCB layout compatibility requires verification of pin assignments and thermal pad dimensions.

Q: What is the difference between STD7ANM60N and STD7NM60N?

A: Both parts are electrically identical with 600V Vdss, 5A continuous drain current, and 900mOhm Rds On. STD7ANM60N carries AEC-Q101 automotive qualification and is available in both DPAK and D2PAK packages. STD7NM60N is available in DPAK only. Selection depends on automotive qualification requirements and package availability.

Q: Is IPD80R1K0CEATMA1 suitable as a drop-in replacement?

A: IPD80R1K0CEATMA1 is not a direct drop-in replacement due to higher voltage rating (800V vs. 600V) and significantly higher gate charge (31nC vs. 17nC). This part requires circuit redesign to accommodate higher gate drive requirements and may introduce unnecessary cost and complexity. Use this part only when higher voltage margin is a design requirement.

Q: Why does PJMD900N60EC_L2_00001 show lower power dissipation (47.5W vs. 52W)?

A: Power dissipation ratings reflect thermal design specifications at specific junction temperatures and case conditions. Lower power dissipation rating does not indicate inferior performance; it reflects conservative thermal modeling by Panjit International Inc. Electrical performance (Vdss, Id, Rds On) remains equivalent to FCD900N60Z.

Q: Can AOD4S60 be used as a substitute despite lower current rating (4A vs. 4.5A)?

A: AOD4S60 operates at 4A continuous drain current, which is below the FCD900N60Z specification of 4.5A. This part is suitable only for applications where actual circuit current demand does not exceed 4A. Thermal margin is reduced due to lower current rating. AOD4S60 carries "Not For New Designs" status, limiting its use to legacy system support.

Q: What package compatibility issues should be considered?

A: FCD900N60Z uses TO-252AA package; most substitutes use standard DPAK (TO-252-3). These packages are mechanically compatible with identical pin spacing and thermal pad dimensions. STB7ANM60N uses D2PAK (TO-263-3), which has different pin spacing and requires PCB redesign. R6006ANDTL uses CPT3 package with unique pin configuration, requiring full PCB layout modification.

Q: Are there temperature range differences between substitutes?

A: FCD900N60Z and most STMicroelectronics substitutes operate from -55°C to 150°C. R6006ANDTL specifies only maximum temperature of 150°C without lower limit documentation. IPD80R1K0CEATMA1 maintains -55°C to 150°C range. Verify complete temperature specification for applications requiring full -55°C to 150°C operation.

Q: Which substitute offers the best thermal performance?

A: IPD80R1K0CEATMA1 provides highest power dissipation rating (83W) with lowest Rds On at specified current (950mOhm @ 3.6A). STD9N60M2 offers 60W power dissipation with 780mOhm Rds On @ 3A, providing superior thermal performance within the 600V class. Selection depends on circuit current requirements and thermal design constraints.

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