FCD850N80Z Equivalent & Substitute Parts

Part Overview

The FCD850N80Z is an N-Channel 800V 6A MOSFET manufactured by onsemi in the SuperFET® II series, housed in a TO-252-3 (DPAK) surface mount package. This device is rated for 75W power dissipation and operates across a temperature range of -55°C to 150°C. The part is designated as Not For New Designs, indicating it has been superseded in onsemi's product portfolio. Identifying equivalent and substitute parts is necessary for design continuity, inventory management, and sourcing flexibility when the primary part becomes unavailable or when transitioning to active product lines.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	6	A (Tc)
Rds On (Max) @ Id, Vgs	850 mOhm @ 3A, 10V	Ohm
Gate Charge (Qg) (Max) @ Vgs	29	nC @ 10V
Power Dissipation (Max)	75	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-252-3 (DPAK)	Surface Mount
Vgs (Max)	±20	V
Input Capacitance (Ciss) @ 100V	1315	pF

Substitute Part Grouping Explanation

Substitution of the FCD850N80Z is determined by the following critical parameters:

Voltage Rating (Vdss): The substitute must support 800V drain-to-source voltage or higher. Parts rated at 600V or 700V are not direct substitutes for 800V applications.

Current Rating (Id): The substitute must support continuous drain current of 6A or greater at 25°C to maintain equivalent current-handling capability.

Package Type: All substitutes must use the TO-252-3 (DPAK) surface mount package to ensure mechanical and thermal compatibility with existing PCB layouts.

Gate Drive Voltage: The substitute must operate with 10V gate drive voltage, consistent with the original part.

Operating Temperature Range: The substitute must support the full -55°C to 150°C operating range or a subset that includes the application's required temperature window.

RoHS and Compliance: All substitutes must maintain ROHS3 compliance and EAR99 classification to ensure regulatory continuity.

Based on these criteria, substitute parts are grouped into two categories:

Direct Voltage Equivalents (800V): Parts with 800V Vdss rating that maintain the same voltage class as the FCD850N80Z.

Lower Voltage Alternatives (600V-700V): Parts with reduced voltage ratings suitable only for applications where 800V is not required. These are functional alternatives for lower-voltage circuit designs.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Temp Range (°C)	Product Status	Package
FCD850N80Z	onsemi	800	6	850 @ 3A	29 @ 10V	75	-55 to 150	Not For New Designs	TO-252-3
SPD06N80C3ATMA1	Infineon	800	6	900 @ 3.8A	41 @ 10V	83	-55 to 150	Active	TO-252-3
R8006KND3TL1	Rohm	800	6	900 @ 3A	22 @ 10V	83	-55 to 150	Active	TO-252-3
IPD60R600C6ATMA1	Infineon	600	7.3	600 @ 2.4A	20.5 @ 10V	63	-55 to 150	Not For New Designs	TO-252-3
IPD60R600P6ATMA1	Infineon	600	7.3	600 @ 2.4A	12 @ 10V	63	-55 to 150	Active	TO-252-3
IPD60R800CEAUMA1	Infineon	600	8.4	800 @ 2A	17.2 @ 10V	74	-40 to 150	Active	TO-252-3
IPD60R1K5CEAUMA1	Infineon	600	5	1500 @ 1.1A	9.4 @ 10V	49	-40 to 150	Active	TO-252-3
IPD60R2K0C6ATMA1	Infineon	600	2.4	2000 @ 0.76A	6.7 @ 10V	22.3	-55 to 150	Active	TO-252-3
IPD60R2K1CEAUMA1	Infineon	600	2.3	2100 @ 0.76A	6.7 @ 10V	38	-40 to 150	Active	TO-252-3
IPD70R1K4CEAUMA1	Infineon	700	5.4	1400 @ 1A	10.5 @ 10V	53	-40 to 150	Not For New Designs	TO-252-3

Engineering Selection Recommendations

For Direct Replacement (800V Applications):

The SPD06N80C3ATMA1 (Infineon CoolMOS™) and R8006KND3TL1 (Rohm) are the primary direct substitutes for the FCD850N80Z. Both devices maintain the 800V voltage rating, 6A continuous drain current, and TO-252-3 package. Both parts are in Active product status, ensuring long-term availability and supply chain stability. The SPD06N80C3ATMA1 offers slightly higher power dissipation capability (83W vs. 75W) and operates across the full -55°C to 150°C temperature range. The R8006KND3TL1 provides comparable electrical performance with lower gate charge (22 nC vs. 29 nC), which may reduce switching losses in certain applications. Both parts are ROHS3 compliant and EAR99 classified.

For Lower-Voltage Applications (600V Maximum):

When circuit design permits operation at 600V or below, the IPD60R600P6ATMA1 (Infineon CoolMOS™ P6) is recommended as an active alternative. This part delivers 7.3A continuous current, exceeding the FCD850N80Z's 6A rating, and maintains the full -55°C to 150°C operating range. The IPD60R800CEAUMA1 (Infineon CoolMOS™ CE) provides 8.4A current capability with 74W power dissipation, closely matching the original part's thermal performance, though it operates at -40°C minimum temperature.

For Reduced Current Applications (Below 6A):

The IPD60R1K5CEAUMA1 (Infineon CoolMOS™ CE) supports 5A continuous current at 600V and is suitable for applications where the full 6A capability is not required. This part is in Active status and operates across -40°C to 150°C.

Compliance and Regulatory Considerations:

All recommended substitutes maintain ROHS3 compliance and EAR99 classification, ensuring regulatory continuity with the original FCD850N80Z. Moisture sensitivity levels vary; parts with MSL 1 (Unlimited) provide superior shelf-life stability compared to MSL 3 (168 Hours) variants.

Frequently Asked Questions (FAQ)

Q: Can the SPD06N80C3ATMA1 be used as a direct replacement for the FCD850N80Z?

A: Yes. Both parts share identical voltage (800V), current (6A), and package (TO-252-3) specifications. The SPD06N80C3ATMA1 is in Active product status, providing improved supply chain continuity. Minor differences in gate charge (41 nC vs. 29 nC) and on-resistance characteristics may affect switching performance; circuit validation is required for critical applications.

Q: Why are 600V parts listed as substitutes for an 800V device?

A: 600V parts are functional alternatives only for applications where the circuit design operates below 600V. They cannot be used in 800V applications. These alternatives are provided for design flexibility when voltage requirements permit lower-rated devices.

Q: What is the significance of the "Not For New Designs" status?

A: This designation indicates the FCD850N80Z has been superseded in onsemi's product line. While existing inventory remains available, onsemi does not recommend this part for new circuit designs. Active-status substitutes ensure access to parts with ongoing manufacturer support and extended product lifecycles.

Q: Does the TO-252-3 package ensure mechanical compatibility?

A: Yes. All listed substitutes use the TO-252-3 (DPAK) package with identical pinout and thermal characteristics. PCB layouts and thermal management designs require no modification for package-compatible substitutes.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Higher gate charge (SPD06N80C3ATMA1 at 41 nC) increases switching losses and requires higher gate drive current. Lower gate charge (R8006KND3TL1 at 22 nC) reduces switching losses. Selection depends on the gate driver's current capability and the application's switching frequency.

Q: Are there temperature range limitations with substitute parts?

A: Most substitutes support the full -55°C to 150°C range. However, IPD60R1K5CEAUMA1, IPD60R2K1CEAUMA1, and IPD70R1K4CEAUMA1 operate at -40°C minimum. Verify the application's minimum operating temperature requirement before selection.

Q: What is the difference between Tc and Ta current ratings?

A: Tc (case temperature) ratings assume the device case is maintained at 25°C through external cooling. Ta (ambient temperature) ratings assume the device operates in ambient air at 25°C without external heat management. The FCD850N80Z and SPD06N80C3ATMA1 use Tc ratings; R8006KND3TL1 uses Ta rating. Tc ratings typically allow higher current capacity under equivalent thermal conditions.

Q: Can I use IPD60R600P6ATMA1 in place of FCD850N80Z in an 800V circuit?

A: No. The IPD60R600P6ATMA1 is rated for 600V maximum. Using it in an 800V circuit will result in device failure due to voltage overstress. Voltage rating must match or exceed the circuit's maximum operating voltage.

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