FCD600N60Z Equivalent & Substitute Parts

Part Overview

The FCD600N60Z is an N-Channel 600V MOSFET manufactured by onsemi in the SuperFET® II series. This device is rated for 7.4A continuous drain current and 89W power dissipation in a Surface Mount TO-252AA (DPAK) package. The part is classified as "Not For New Designs," indicating it has been superseded in onsemi's product portfolio. Equivalent and substitute parts are necessary for applications requiring continued supply, design flexibility, or performance optimization within the 600V N-Channel MOSFET category.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	7.4	A
On-State Resistance (Rds On) @ 3.7A, 10V	600	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3.5	V
Gate Charge (Qg) @ 10V	26	nC
Power Dissipation (Max)	89	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-252-3 DPAK	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the FCD600N60Z is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 600V minimum (higher voltage ratings are acceptable)
Continuous Drain Current (Id): 7.4A minimum at 25°C
On-State Resistance (Rds On): 600mOhm maximum at rated conditions
Gate Threshold Voltage (Vgs(th)): Within ±1.5V of 3.5V
Package Type: TO-252-3 DPAK (Surface Mount)
Mounting Type: Surface Mount
Operating Temperature: -55°C to 150°C minimum

Secondary Compatibility Parameters:

Gate Charge (Qg): Lower values preferred for faster switching
Power Dissipation: 89W or higher
Maximum Gate Voltage (Vgs): ±20V minimum

Substitute parts must maintain electrical compatibility within the application's thermal and electrical design constraints. Parts exceeding the primary criteria in current rating, power dissipation, or voltage rating remain functionally compatible. Parts with lower current ratings or higher on-state resistance may not be suitable for all applications.

Parameter Comparison

Parameter	FCD600N60Z	CDM7-600LR TR13	STD10N60M2	STD10NM60N	STD11NM60ND	STD8N60DM2	TK9P65W,RQ
Manufacturer	onsemi	Central Semiconductor	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	Toshiba
Vdss (V)	600	600	600	600	600	600	650
Id @ 25°C (A)	7.4	7.0	7.5	10.0	10.0	8.0	9.3
Rds On (mOhm)	600 @ 3.7A	580 @ 3.5A	600 @ 3.0A	550 @ 4.0A	450 @ 5.0A	600 @ 4.0A	560 @ 4.6A
Vgs(th) (V)	3.5 @ 250µA	4.0 @ 250µA	4.0 @ 250µA	4.0 @ 250µA	5.0 @ 250µA	5.0 @ 100µA	3.5 @ 350µA
Qg (nC)	26 @ 10V	14.5 @ 10V	13.5 @ 10V	19.0 @ 10V	30.0 @ 10V	13.5 @ 10V	20.0 @ 10V
Power Dissipation (W)	89	60	85	70	90	85	80
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	to 150	to 150	to 150
Package	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK
Product Status	Not For New Designs	Active	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Direct Substitutes (Highest Compatibility):

The STD10N60M2 and STD8N60DM2 from STMicroelectronics provide the closest electrical match to the FCD600N60Z. Both devices maintain 600V Vdss rating, deliver comparable or superior current ratings (7.5A and 8.0A respectively), and feature identical TO-252-3 DPAK packaging. Both parts carry Active product status and ROHS3 compliance, ensuring long-term availability and regulatory alignment.

Performance-Enhanced Substitutes:

The STD10NM60N and STD11NM60ND offer increased current capacity (10A) with improved on-state resistance characteristics. The STD11NM60ND delivers superior performance with 450mOhm Rds On at 5A, reducing conduction losses. Both maintain 600V Vdss and DPAK packaging. These parts are suitable for applications where thermal headroom or efficiency improvements are beneficial.

Alternative Voltage Rating:

The TK9P65W,RQ from Toshiba operates at 650V Vdss, providing additional voltage margin. With 9.3A continuous current and 560mOhm Rds On, this device is compatible with FCD600N60Z applications. The higher voltage rating accommodates designs with transient overvoltage conditions.

Lower Current Alternative:

The CDM7-600LR TR13 PBFREE from Central Semiconductor delivers 7.0A continuous current, closely matching the FCD600N60Z specification. This part features lower gate charge (14.5nC) and reduced power dissipation (60W), making it suitable for applications prioritizing switching speed or thermal constraints.

Product Status Consideration:

All substitute parts listed carry Active product status, ensuring continued manufacturing and supply availability. The FCD600N60Z is classified as "Not For New Designs," making substitution necessary for new product development or long-term production continuity.

Frequently Asked Questions (FAQ)

Q: Can the STD10NM60N directly replace the FCD600N60Z in existing designs?

A: Yes. The STD10NM60N maintains 600V Vdss, exceeds the 7.4A current requirement with 10A rating, and uses identical TO-252-3 DPAK packaging. Pin configuration and thermal characteristics are compatible. The lower on-state resistance (550mOhm) reduces conduction losses compared to the FCD600N60Z.

Q: What is the difference between the STD10N60M2 and STD10NM60N?

A: Both devices deliver 600V Vdss and operate in TO-252-3 DPAK packages. The STD10N60M2 provides 7.5A at 600mOhm Rds On, while the STD10NM60N delivers 10A at 550mOhm Rds On. The STD10NM60N offers higher current capacity and lower on-state resistance, suitable for higher-power applications.

Q: Is the TK9P65W,RQ suitable for 600V applications?

A: Yes. The TK9P65W,RQ is rated for 650V Vdss, which exceeds the 600V requirement. This higher voltage rating provides additional safety margin for transient overvoltage conditions. The device is electrically and mechanically compatible with FCD600N60Z applications.

Q: Why does the CDM7-600LR TR13 have lower power dissipation than the FCD600N60Z?

A: The CDM7-600LR TR13 is rated for 60W maximum power dissipation compared to the FCD600N60Z at 89W. This reflects differences in die design and thermal characteristics. The lower power rating does not prevent substitution; it indicates the device operates at lower junction temperatures under equivalent load conditions.

Q: Are all substitute parts available in the same packaging?

A: Yes. All substitute parts listed use TO-252-3 DPAK (2 Leads + Tab) Surface Mount packaging, identical to the FCD600N60Z. This ensures mechanical and thermal compatibility on existing PCB layouts without modification.

Q: What is the significance of gate charge (Qg) differences among these devices?

A: Gate charge affects switching speed and driver power requirements. The CDM7-600LR TR13 and STD10N60M2 feature lower gate charge (14.5nC and 13.5nC respectively) compared to the FCD600N60Z (26nC), enabling faster switching transitions. The STD11NM60ND has higher gate charge (30nC), resulting in slower switching but potentially lower EMI.

Q: Can I use the STD8N60DM2 if my application requires 7.4A continuous current?

A: The STD8N60DM2 is rated for 8.0A continuous current, which exceeds the 7.4A requirement. This provides adequate margin for the FCD600N60Z application. Verify thermal design accommodates the 85W power dissipation rating.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed carry ROHS3 Compliant certification, matching the FCD600N60Z compliance status. All parts are REACH Unaffected and classified as EAR99 for export purposes.

Q: What is the moisture sensitivity level (MSL) for these devices?

A: All listed devices, including the FCD600N60Z and all substitutes, carry MSL 1 (Unlimited) rating. This indicates no moisture sensitivity precautions are required during storage, handling, or assembly.

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