ESH3B R7G Equivalent & Substitute Parts

Part Overview

The ESH3B R7G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 100 V DC reverse voltage and 3 A average rectified current in a DO-214AB (SMC) surface mount package. This component is classified as discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing production and repair applications. The part exhibits fast recovery characteristics with a 20 ns reverse recovery time, making it suitable for applications requiring rapid switching performance.

Substiute Parts

ESH3B R7G
Taiwan Semiconductor CorporationIn Stock: 949ESH3B R7G Datasheet
ESH3B R7G
Current Part
CGRC502-G
Comchip TechnologyIn Stock: 887CGRC502-G Datasheet
CGRC502-G
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ES3B-13-F
Diodes IncorporatedIn Stock: 10183ES3B-13-F Datasheet
ES3B-13-F
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ES3BB-13-F
Diodes IncorporatedIn Stock: 126266ES3BB-13-F Datasheet
ES3BB-13-F
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RS3B-13-F
Diodes IncorporatedIn Stock: 9168RS3B-13-F Datasheet
RS3B-13-F
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RS3BB-13-F
Diodes IncorporatedIn Stock: 3201RS3BB-13-F Datasheet
RS3BB-13-F
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S3B-13-F
Diodes IncorporatedIn Stock: 30129S3B-13-F Datasheet
S3B-13-F
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S3B-TP
Micro Commercial CoIn Stock: 8884S3B-TP Datasheet
S3B-TP
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S3BB-13-F
Diodes IncorporatedIn Stock: 19031S3BB-13-F Datasheet
S3BB-13-F
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S5BC-13-F
Diodes IncorporatedIn Stock: 6745S5BC-13-F Datasheet
S5BC-13-F
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U3B-E3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 12243U3B-E3/57T Datasheet
U3B-E3/57T
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U3B-E3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 824U3B-E3/9AT Datasheet
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ESH3B-E3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 10475ESH3B-E3/57T Datasheet
ESH3B-E3/57T
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ESH3B-E3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1078ESH3B-E3/9AT Datasheet
ESH3B-E3/9AT
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ESH3B-M3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 884ESH3B-M3/57T Datasheet
ESH3B-M3/57T
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ESH3B-M3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1170ESH3B-M3/9AT Datasheet
ESH3B-M3/9AT
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ESH3BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1135ESH3BHE3_A/H Datasheet
ESH3BHE3_A/H
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ESH3BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 1129ESH3BHE3_A/I Datasheet
ESH3BHE3_A/I
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 900 mV @ 3 A mV
Reverse Recovery Time (trr) 20 ns
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 5 µA @ 100 V
Capacitance @ Vr, F 45 pF @ 4V, 1MHz
Package / Case DO-214AB, SMC
Operating Temperature - Junction -55 to 175 °C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the ESH3B R7G is determined by the following critical parameters:

Primary Matching Criteria:

  • Voltage - DC Reverse (Vr) (Max): 100 V minimum
  • Current - Average Rectified (Io): 3 A minimum
  • Package / Case: DO-214AB (SMC) or compatible surface mount package
  • Mounting Type: Surface Mount

Secondary Compatibility Factors:

  • Voltage - Forward (Vf) (Max) @ If: Must not exceed application requirements
  • Reverse Recovery Time (trr): Fast recovery classification preferred for switching applications
  • Operating Temperature - Junction: Must encompass application operating range
  • RoHS Status: ROHS3 Compliant for regulatory compliance
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) for standard handling

Substitute parts are grouped into two categories: Direct Package Equivalents (DO-214AB SMC) and Alternative Package Options (DO-214AA SMB). Parts with identical voltage and current ratings but different recovery characteristics or forward voltage specifications are included where they meet minimum electrical requirements.

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [mV] trr [ns] Speed Package Tj (Max) [°C] Product Status
ESH3B R7G Taiwan Semiconductor Corporation 100 3 900 @ 3A 20 Fast Recovery ≤ 500ns DO-214AB (SMC) 175 Discontinued
ES3B-13-F Diodes Incorporated 100 3 900 @ 3A 25 Fast Recovery ≤ 500ns DO-214AB (SMC) 150 Active
RS3B-13-F Diodes Incorporated 100 3 1300 @ 3A 150 Fast Recovery ≤ 500ns DO-214AB (SMC) 150 Active
S3B-13-F Diodes Incorporated 100 3 1150 @ 3A Standard Recovery > 500ns DO-214AB (SMC) 150 Active
S3B-TP Micro Commercial Co 100 3 1200 @ 3A Standard Recovery > 500ns DO-214AB (SMC) 150 Not For New Designs
ES3BB-13-F Diodes Incorporated 100 3 900 @ 3A 25 Fast Recovery ≤ 500ns DO-214AA (SMB) 150 Active
S3BB-13-F Diodes Incorporated 100 3 1150 @ 3A Standard Recovery > 500ns DO-214AA (SMB) 150 Active
RS3BB-13-F Diodes Incorporated 100 3 1300 @ 3A 150 Fast Recovery ≤ 500ns DO-214AA (SMB) 150 Active
CGRC502-G Comchip Technology 100 5 1150 @ 5A Standard Recovery > 500ns DO-214AB (SMC) 150 Active
S5BC-13-F Diodes Incorporated 100 5 1150 @ 5A Standard Recovery > 500ns DO-214AB (SMC) 150 Active
U3B-E3/57T Vishay General Semiconductor - Diodes Division 100 2 900 @ 3A 20 Fast Recovery ≤ 500ns DO-214AB (SMC) 150 Active

Engineering Selection Recommendations

Preferred Direct Replacements (DO-214AB SMC Package):

The ES3B-13-F (Diodes Incorporated) is the primary equivalent for the ESH3B R7G. Both parts share identical voltage (100 V), current (3 A), and forward voltage (900 mV @ 3 A) specifications with fast recovery characteristics (≤ 500 ns). The ES3B-13-F is currently in active production status with ROHS3 compliance and MSL 1 rating, ensuring regulatory alignment and supply continuity. The reverse recovery time differs by 5 ns (25 ns versus 20 ns), which remains within fast recovery classification parameters.

Alternative Selections Based on Application Requirements:

For applications where forward voltage drop is not critical, the S3B-13-F (Diodes Incorporated) provides an active, ROHS3-compliant alternative with standard recovery characteristics. This part exhibits 1150 mV forward voltage at 3 A and operates across -65°C to 150°C, extending the lower temperature range compared to the original specification.

The RS3B-13-F (Diodes Incorporated) offers identical voltage and current ratings with extended temperature range (-65°C to 150°C) but exhibits higher forward voltage (1300 mV @ 3 A) and longer reverse recovery time (150 ns). This part is suitable for applications where thermal performance is prioritized over switching speed.

Package Alternatives (DO-214AA SMB):

The ES3BB-13-F and S3BB-13-F provide functional equivalence in the DO-214AA (SMB) package format. These parts maintain the same electrical specifications as their SMC counterparts but require PCB layout modifications due to different package geometry. Selection of SMB variants is appropriate only when board space constraints or existing design layouts mandate this package type.

Higher Current Ratings (5 A):

The CGRC502-G (Comchip Technology) and S5BC-13-F (Diodes Incorporated) provide 5 A current capacity at 100 V reverse voltage. These parts are suitable for applications requiring higher current handling than the original 3 A specification. Both maintain ROHS3 compliance and MSL 1 rating.

Lower Current Rating (2 A):

The U3B-E3/57T (Vishay General Semiconductor - Diodes Division) provides 2 A current capacity with fast recovery characteristics (20 ns) and 900 mV forward voltage matching the original part. This selection is appropriate only for applications with reduced current requirements.

Parts to Avoid:

The S3B-TP (Micro Commercial Co) carries a "Not For New Designs" product status designation and should not be selected for new applications despite electrical compatibility.

Frequently Asked Questions (FAQ)

Q: Can the ES3B-13-F directly replace the ESH3B R7G without PCB modifications?

A: Yes. The ES3B-13-F is packaged in the identical DO-214AB (SMC) format with matching pinout and footprint. No PCB layout changes are required. Both parts are surface mount components with equivalent mechanical dimensions.

Q: What is the significance of the 5 ns difference in reverse recovery time between ESH3B R7G (20 ns) and ES3B-13-F (25 ns)?

A: Both parts are classified as fast recovery diodes with recovery times ≤ 500 ns. The 5 ns difference is negligible for most switching applications and does not alter the functional classification. Applications with stringent switching speed requirements should verify performance through circuit simulation or testing.

Q: Why do some substitute parts have higher forward voltage specifications?

A: Forward voltage variation reflects differences in semiconductor manufacturing processes and doping profiles between manufacturers. Parts with higher forward voltage (such as RS3B-13-F at 1300 mV) generate additional heat dissipation. Selection should account for thermal budget and power loss calculations specific to the application circuit.

Q: Can I use the CGRC502-G or S5BC-13-F (5 A rated) as substitutes for the 3 A ESH3B R7G?

A: Yes, from an electrical compatibility standpoint. Higher current-rated diodes operate safely at lower current levels. However, these parts exhibit standard recovery characteristics (> 500 ns) rather than fast recovery, which may impact switching performance in high-frequency applications. Verify circuit performance requirements before selection.

Q: What is the difference between DO-214AB (SMC) and DO-214AA (SMB) packages?

A: These are distinct surface mount package formats with different physical dimensions and PCB footprints. DO-214AB (SMC) is smaller than DO-214AA (SMB). Parts in different packages require corresponding PCB layout modifications and cannot be used interchangeably without redesign. Verify package compatibility with existing board designs before substitution.

Q: Are all substitute parts ROHS3 compliant and MSL 1 rated?

A: Yes. All substitute parts listed in this reference maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, ensuring regulatory alignment and standard handling procedures consistent with the original ESH3B R7G specification.

Q: Which substitute part has the widest operating temperature range?

A: The S3B-13-F, RS3B-13-F, S3BB-13-F, RS3BB-13-F, and S5BC-13-F all operate across -65°C to 150°C, extending the lower temperature limit compared to the original ESH3B R7G specification of -55°C to 175°C. The original part maintains a higher maximum junction temperature (175°C versus 150°C for most substitutes).

Q: What is the product status significance when selecting a substitute?

A: Product status indicates manufacturer commitment to ongoing supply and design support. "Active" status parts are recommended for new designs and provide long-term availability. "Discontinued" parts (ESH3B R7G) require substitution. "Not For New Designs" parts (S3B-TP) should be avoided for new applications despite potential electrical compatibility.

Q: Can I mix different substitute parts within a single circuit board design?

A: Electrical compatibility exists across all listed substitutes for the same functional role. However, mixing parts with different forward voltage characteristics (900 mV, 1150 mV, 1300 mV) in parallel or series configurations may result in unequal current distribution or voltage division. Maintain consistency within a single design unless circuit topology specifically accounts for voltage variation.

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