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ESH3B-E3/9AT Equivalent & Substitute Parts
Part Overview
The ESH3B-E3/9AT is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. This surface mount component operates at 100 V DC reverse voltage with a 3 A average rectified current rating and is housed in a DO-214AB (SMC) package. The device is classified as Active product status and is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).
Substitute parts are necessary when the primary component becomes unavailable, when alternative sourcing is required for supply chain optimization, or when design flexibility across multiple manufacturers is needed while maintaining electrical and mechanical compatibility.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 100 | V |
| Current - Average Rectified (Io) | 3 | A |
| Voltage - Forward (Vf) (Max) @ If | 900 mV @ 3 A | mV |
| Speed | Fast Recovery ≤ 500ns, > 200mA (Io) | ns |
| Reverse Recovery Time (trr) | 40 | ns |
| Current - Reverse Leakage @ Vr | 5 | µA @ 100 V |
| Mounting Type | Surface Mount | - |
| Package / Case | DO-214AB, SMC | - |
| Operating Temperature - Junction | -55 to 175 | °C |
| Technology | Standard | - |
| RoHS Status | ROHS3 Compliant | - |
| MSL | 1 (Unlimited) | - |
Substitute Part Grouping Explanation
Substitute parts for the ESH3B-E3/9AT are qualified based on the following critical parameters:
Electrical Compatibility Requirements:
- Voltage - DC Reverse (Vr) (Max): 100 V minimum
- Current - Average Rectified (Io): 3 A minimum
- Package / Case: DO-214AB or SMC equivalent
- Mounting Type: Surface Mount
- RoHS Status: ROHS3 Compliant
- MSL: 1 (Unlimited)
Technology Classification: Substitute parts are grouped into two technology categories:
-
Standard Recovery Diodes - Reverse recovery time greater than 500 ns. These parts maintain identical voltage and current ratings with standard switching characteristics.
-
Fast Recovery Diodes - Reverse recovery time less than or equal to 500 ns. These parts provide improved switching performance while maintaining voltage and current specifications.
Package Considerations: All substitute parts utilize DO-214AB or SMC package designations, ensuring mechanical and thermal compatibility with the original ESH3B-E3/9AT footprint.
Parameter Comparison
| Parameter | ESH3B-E3/9AT (Vishay) | ES3B (TSC) | ES3B-13-F (Diodes Inc.) | S3B-13-F (Diodes Inc.) | S3B-TP (MCC) | STPS3H100U (STMicroelectronics) |
|---|---|---|---|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V |
| Current - Average Rectified (Io) | 3 A | 3 A | 3 A | 3 A | 3 A | 3 A |
| Voltage - Forward (Vf) (Max) @ If | 900 mV @ 3 A | 950 mV @ 3 A | 900 mV @ 3 A | 1.15 V @ 3 A | 1.2 V @ 3 A | 840 mV @ 3 A |
| Speed | Fast Recovery ≤ 500ns | Fast Recovery ≤ 500ns | Fast Recovery ≤ 500ns | Standard Recovery >500ns | Standard Recovery >500ns | Fast Recovery ≤ 500ns |
| Reverse Recovery Time (trr) | 40 ns | 35 ns | 25 ns | - | - | - |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V | 10 µA @ 100 V | 10 µA @ 100 V | 10 µA @ 100 V | 10 µA @ 100 V | 1 µA @ 100 V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | DO-214AB, SMC | DO-214AB, SMC | DO-214AB, SMC | DO-214AB, SMC | DO-214AB, SMC | DO-214AA, SMB |
| Operating Temperature - Junction | -55 to 175°C | -55 to 150°C | -55 to 150°C | -65 to 150°C | -55 to 150°C | Max 175°C |
| Technology | Standard | Standard | Standard | Standard | Standard | Schottky |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| MSL | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
Engineering Selection Recommendations
Primary Substitutes (Fast Recovery Technology):
ES3B (Taiwan Semiconductor Corporation) and ES3B-13-F (Diodes Incorporated) are direct functional equivalents with fast recovery characteristics matching the ESH3B-E3/9AT. Both parts maintain 100 V reverse voltage and 3 A current ratings with reverse recovery times within the fast recovery specification. ES3B-13-F offers superior reverse recovery time (25 ns) compared to the original part (40 ns). Both substitute parts are Active product status with ROHS3 compliance and unlimited MSL rating.
Secondary Substitutes (Standard Recovery Technology):
S3B-13-F (Diodes Incorporated) and S3B-TP (Micro Commercial Co) operate with standard recovery characteristics (>500 ns). These parts meet voltage and current specifications but exhibit higher forward voltage drop (1.15 V and 1.2 V respectively) compared to the original 900 mV specification. S3B-TP carries Not For New Designs product status and should be used only for legacy system maintenance. S3B-13-F maintains Active product status.
Alternative Technology (Schottky Diode):
STPS3H100U (STMicroelectronics) is a Schottky technology diode with identical voltage and current ratings. This part exhibits lower forward voltage drop (840 mV) and lower reverse leakage current (1 µA) compared to the standard rectifier diodes. The Schottky technology represents a different device class and should be selected only when lower forward voltage characteristics are required for the application. STPS3H100U uses DO-214AA (SMB) package, which differs from the original DO-214AB (SMC) package.
Compliance and Certification:
All recommended substitute parts maintain ROHS3 compliance, unlimited MSL rating, and REACH unaffected status, matching the original ESH3B-E3/9AT specifications. All parts carry EAR99 ECCN classification and 8541.10.0080 HTSUS code.
Frequently Asked Questions (FAQ)
Q: Can ES3B-13-F directly replace ESH3B-E3/9AT in all applications?
A: ES3B-13-F meets all critical electrical parameters: 100 V reverse voltage, 3 A current rating, fast recovery characteristics, and identical DO-214AB SMC package. The part is electrically compatible for direct substitution. ES3B-13-F exhibits superior reverse recovery time (25 ns versus 40 ns), which provides improved switching performance in high-frequency applications.
Q: What is the difference between fast recovery and standard recovery diodes in this comparison?
A: Fast recovery diodes (ESH3B-E3/9AT, ES3B, ES3B-13-F, STPS3H100U) have reverse recovery times ≤ 500 ns, enabling faster switching transitions. Standard recovery diodes (S3B-13-F, S3B-TP) have reverse recovery times > 500 ns, resulting in slower switching transitions. Fast recovery diodes are preferred in switching power supplies and high-frequency rectification circuits. Standard recovery diodes are suitable for line-frequency rectification and lower-speed applications.
Q: Why does STPS3H100U have a different package designation (SMB versus SMC)?
A: STPS3H100U uses DO-214AA (SMB) package while ESH3B-E3/9AT uses DO-214AB (SMC) package. Although both are surface mount packages with similar thermal characteristics, they have different physical dimensions and PCB footprints. Direct substitution requires PCB layout modification. STPS3H100U should be selected only when the SMB package footprint is available or when the application benefits from Schottky technology characteristics.
Q: Is S3B-TP suitable for new product designs?
A: S3B-TP carries Not For New Designs product status. This designation indicates the part is available for legacy system support and maintenance only. New designs should utilize ES3B-13-F, S3B-13-F, or other Active status alternatives. S3B-TP remains electrically compatible with ESH3B-E3/9AT specifications but should not be selected for new development projects.
Q: What are the temperature operating range differences among substitute parts?
A: ESH3B-E3/9AT operates from -55°C to 175°C junction temperature. ES3B, ES3B-13-F, S3B-TP, and S3B-13-F operate from -55°C to 150°C (S3B-13-F extends to -65°C minimum). STPS3H100U specifies 175°C maximum without minimum temperature. Applications requiring full -55°C to 175°C range should use ESH3B-E3/9AT or STPS3H100U. Other substitutes are limited to -55°C to 150°C maximum.
Q: How do forward voltage drop differences affect circuit performance?
A: ESH3B-E3/9AT and ES3B-13-F specify 900 mV forward voltage drop at 3 A. ES3B specifies 950 mV, S3B-13-F specifies 1.15 V, S3B-TP specifies 1.2 V, and STPS3H100U specifies 840 mV. Higher forward voltage drop increases power dissipation and heat generation. Lower forward voltage drop reduces power loss. Applications with tight thermal budgets or high current density should prioritize parts with lower forward voltage specifications. Schottky diodes (STPS3H100U) provide the lowest forward voltage option.
Q: Are all substitute parts available in the same packaging options?
A: ES3B-13-F is available in Tape & Reel (TR) packaging matching ESH3B-E3/9AT. ES3B packaging is not specified in available data. S3B-13-F is available in Cut Tape (CT) & Digi-Reel® packaging. S3B-TP is available in Tape & Reel (TR) packaging. STPS3H100U is available in Cut Tape (CT) & Digi-Reel® packaging. Packaging selection depends on manufacturing process requirements and component handling systems.
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