ESH2DA R3G Equivalent & Substitute Parts

Part Overview

The ESH2DA R3G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 200 V DC reverse voltage and 1 A average rectified current in a surface mount DO-214AC (SMA) package. This part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design support and procurement.

The ESH2DA R3G operates across a junction temperature range of -55°C to 175°C and features fast recovery characteristics with a reverse recovery time of 25 nanoseconds. The component is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Substiute Parts

ESH2DA R3G
Taiwan Semiconductor CorporationIn Stock: 1190ESH2DA R3G Datasheet
ESH2DA R3G
Current Part
ESH1D
Taiwan Semiconductor CorporationIn Stock: 10423ESH1D Datasheet
ESH1D
Parametric Equivalent
ESH2DA
Taiwan Semiconductor CorporationIn Stock: 15999ESH2DA Datasheet
ESH2DA
Parametric Equivalent
CGRA4003-G
Comchip TechnologyIn Stock: 989CGRA4003-G Datasheet
CGRA4003-G
Similar
ES1D-13-F
Diodes IncorporatedIn Stock: 550426ES1D-13-F Datasheet
ES1D-13-F
Similar
ES1D-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 20111ES1D-E3/5AT Datasheet
ES1D-E3/5AT
Similar
ES1D-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 2328676ES1D-E3/61T Datasheet
ES1D-E3/61T
Similar
ES1D-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1051ES1D-M3/5AT Datasheet
ES1D-M3/5AT
Similar
ES1D-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 3252ES1D-M3/61T Datasheet
ES1D-M3/61T
Similar
ES1DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 24818ES1DHE3_A/H Datasheet
ES1DHE3_A/H
Similar
ES1DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 20305ES1DHE3_A/I Datasheet
ES1DHE3_A/I
Similar
ES2D-LTP
Micro Commercial CoIn Stock: 75339ES2D-LTP Datasheet
ES2D-LTP
Similar
RS1D-13-F
Diodes IncorporatedIn Stock: 53982RS1D-13-F Datasheet
RS1D-13-F
Similar
RS1DB-13-F
Diodes IncorporatedIn Stock: 1546RS1DB-13-F Datasheet
RS1DB-13-F
Similar
S1D-13-F
Diodes IncorporatedIn Stock: 300326S1D-13-F Datasheet
S1D-13-F
Similar
S1DB-13-F
Diodes IncorporatedIn Stock: 20164S1DB-13-F Datasheet
S1DB-13-F
Similar
UH1DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1128UH1DHE3_A/H Datasheet
UH1DHE3_A/H
Similar
UH1DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 1195UH1DHE3_A/I Datasheet
UH1DHE3_A/I
Similar
US1D-13-F
Diodes IncorporatedIn Stock: 155307US1D-13-F Datasheet
US1D-13-F
Similar
US1D-TP
Micro Commercial CoIn Stock: 3497US1D-TP Datasheet
US1D-TP
Similar
US1GHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 59196US1GHE3_A/H Datasheet
US1GHE3_A/H
Similar
US2DA-TP
Micro Commercial CoIn Stock: 1158US2DA-TP Datasheet
US2DA-TP
Similar
VS-2EMH02-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 883VS-2EMH02-M3/5AT Datasheet
VS-2EMH02-M3/5AT
Similar
ESH1D-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 10257ESH1D-E3/61T Datasheet
ESH1D-E3/61T
Parametric Equivalent
ESH1D-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1153ESH1D-M3/5AT Datasheet
ESH1D-M3/5AT
Parametric Equivalent
ESH1D-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 1041ESH1D-M3/61T Datasheet
ESH1D-M3/61T
Parametric Equivalent
ESH1DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 9509ESH1DHE3_A/H Datasheet
ESH1DHE3_A/H
Parametric Equivalent
ESH1DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 7842ESH1DHE3_A/I Datasheet
ESH1DHE3_A/I
Parametric Equivalent
ESH1DHM3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1134ESH1DHM3_A/H Datasheet
ESH1DHM3_A/H
Parametric Equivalent
ESH1DHM3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 862ESH1DHM3_A/I Datasheet
ESH1DHM3_A/I
Parametric Equivalent
VS-1EMH02-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 15817VS-1EMH02-M3/5AT Datasheet
VS-1EMH02-M3/5AT
Parametric Equivalent
VS-1EMH02HM3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 11286VS-1EMH02HM3/5AT Datasheet
VS-1EMH02HM3/5AT
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) Maximum 200 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) Maximum @ If 900 mV @ 1 A mV
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns
Current - Reverse Leakage @ Vr 1 µA @ 200 V
Capacitance @ Vr, F 25 pF @ 4V, 1MHz
Package / Case DO-214AC, SMA
Operating Temperature - Junction -55 to 175 °C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the ESH2DA R3G is determined by the following critical parameters:

Mandatory Matching Parameters:

  • Voltage - DC Reverse (Vr) Maximum: 200 V
  • Current - Average Rectified (Io): 1 A
  • Package / Case: DO-214AC, SMA (surface mount)
  • Mounting Type: Surface Mount
  • Technology: Standard

Performance Parameters Affecting Substitution:

  • Voltage - Forward (Vf) Maximum @ If: 900 mV @ 1 A (baseline)
  • Reverse Recovery Time (trr): 25 ns (baseline)
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V (baseline)
  • Capacitance @ Vr, F: 25 pF @ 4V, 1MHz (baseline)
  • Operating Temperature - Junction: -55°C to 175°C (baseline)

Substitute parts are classified into two categories:

Parametric Equivalents: Parts with identical electrical specifications across all measured parameters.

Similar Parts: Parts meeting all mandatory matching parameters but with variations in forward voltage, reverse leakage current, capacitance, or operating temperature range. These variations remain within acceptable ranges for general-purpose rectification applications.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) V Io (A) Vf (Max) @ 1A (mV) trr (ns) Ir @ 200V (µA) C @ 4V, 1MHz (pF) Tj Range (°C) Product Status
ESH2DA R3G Taiwan Semiconductor Corporation 200 1 900 25 1 25 -55 to 175 Discontinued
ESH1D Taiwan Semiconductor Corporation 200 1 900 15 1 16 -55 to 175 Active
ESH2DA Taiwan Semiconductor Corporation 200 1 900 25 1 25 -55 to 175 Active
CGRA4003-G Comchip Technology 200 1 1100 5 -55 to 150 Active
ES1D-13-F Diodes Incorporated 200 1 920 25 5 20 -55 to 150 Active
ES1D-E3/5AT Vishay General Semiconductor - Diodes Division 200 1 920 25 5 10 -55 to 150 Active
ES1D-E3/61T Vishay General Semiconductor - Diodes Division 200 1 920 25 5 10 -55 to 150 Active
ES1D-M3/5AT Vishay General Semiconductor - Diodes Division 200 1 920 25 5 10 -55 to 150 Active
ES1D-M3/61T Vishay General Semiconductor - Diodes Division 200 1 920 25 5 10 -55 to 150 Active
ES1DHE3_A/H Vishay General Semiconductor - Diodes Division 200 1 920 25 5 10 -55 to 150 Active
ES1DHE3_A/I Vishay General Semiconductor - Diodes Division 200 1 920 25 5 10 -55 to 150 Active

Engineering Selection Recommendations

Primary Recommendation: ESH2DA (Tape & Reel)

The ESH2DA from Taiwan Semiconductor Corporation is the direct parametric equivalent to the discontinued ESH2DA R3G. This part maintains identical electrical specifications including 25 ns reverse recovery time, 900 mV forward voltage at 1 A, and 25 pF capacitance. The component is currently active in production with 15,984 pieces in stock. Operating temperature range extends to 175°C, matching the original specification. RoHS3 compliance and MSL 1 rating are maintained.

Secondary Recommendation: ESH1D (Tape & Reel)

The ESH1D from Taiwan Semiconductor Corporation meets all mandatory electrical requirements with improved performance characteristics. Reverse recovery time is reduced to 15 ns (faster than the original 25 ns), and capacitance is lower at 16 pF. Forward voltage remains at 900 mV. This part is active with 10,400 pieces in stock and maintains the full -55°C to 175°C operating temperature range. RoHS3 compliance and MSL 1 rating apply.

Alternative Options: Vishay ES1D Series

The Vishay General Semiconductor ES1D-E3/61T, ES1D-M3/61T, ES1D-M3/5AT, and ES1D-E3/5AT parts satisfy all mandatory parameters with forward voltage of 920 mV (20 mV higher than original) and reduced capacitance of 10 pF. Reverse recovery time matches at 25 ns. Operating temperature range is -55°C to 150°C (25°C lower maximum than original). These parts are active with substantial inventory availability. RoHS3 compliance and MSL 1 rating apply.

Automotive-Grade Option: ES1DHE3_A/H and ES1DHE3_A/I

These Vishay parts are AEC-Q101 qualified automotive-grade components with identical electrical specifications to the standard ES1D series. Operating temperature range is -55°C to 150°C. These parts are suitable for applications requiring automotive qualification.

Comchip Alternative: CGRA4003-G

The CGRA4003-G from Comchip Technology meets voltage and current requirements but exhibits higher forward voltage (1.1 V at 1 A, 200 mV above original) and higher reverse leakage current (5 µA versus 1 µA). Operating temperature maximum is 150°C. This part is active with 929 pieces in stock. RoHS3 compliance and MSL 1 rating apply.

Diodes Incorporated Option: ES1D-13-F

The ES1D-13-F from Diodes Incorporated meets all mandatory parameters with forward voltage of 920 mV and reverse leakage of 5 µA. Capacitance is 20 pF. Operating temperature range is -55°C to 150°C. This part is active with 550,400 pieces in stock. RoHS3 compliance and MSL 1 rating apply.

Frequently Asked Questions (FAQ)

Q: Can the ESH2DA R3G be directly replaced with the ESH2DA?

A: Yes. The ESH2DA is a parametric equivalent with identical electrical specifications. Both parts are rated for 200 V reverse voltage, 1 A average rectified current, 900 mV forward voltage at 1 A, and 25 ns reverse recovery time. The primary difference is product status: ESH2DA R3G is discontinued while ESH2DA is active in production.

Q: What is the difference between ESH1D and ESH2DA?

A: Both parts are from Taiwan Semiconductor Corporation and meet the same voltage and current ratings. The ESH1D has a faster reverse recovery time of 15 ns compared to 25 ns for ESH2DA, and lower capacitance of 16 pF versus 25 pF. Both maintain the full -55°C to 175°C operating temperature range. The ESH1D offers improved switching performance.

Q: Why do some substitute parts have a lower maximum operating temperature?

A: Several substitute parts from Vishay and Diodes Incorporated specify a maximum junction temperature of 150°C instead of 175°C. This represents a design difference between manufacturers. For applications operating below 150°C, these parts are fully compatible. Applications requiring operation above 150°C should use ESH1D or ESH2DA.

Q: Are the Vishay ES1D series parts interchangeable with the original ESH2DA R3G?

A: The Vishay ES1D series parts meet all mandatory electrical requirements and package specifications. Forward voltage is slightly higher at 920 mV versus 900 mV, and capacitance is lower at 10 pF versus 25 pF. Reverse recovery time matches at 25 ns. Maximum operating temperature is 150°C instead of 175°C. These parts are suitable for general-purpose rectification applications within the 150°C temperature limit.

Q: What is the significance of the packaging designation (Tape & Reel vs. Cut Tape)?

A: Tape & Reel (TR) and Cut Tape (CT) designations refer to supply format, not electrical specifications. Tape & Reel packaging is supplied on continuous tape for automated assembly. Cut Tape is supplied in smaller quantities on cut tape segments. Electrical performance is identical between packaging formats for the same part number.

Q: Can the CGRA4003-G be used as a direct substitute?

A: The CGRA4003-G meets voltage and current requirements but has higher forward voltage (1.1 V versus 900 mV) and higher reverse leakage current (5 µA versus 1 µA). These differences may affect circuit performance in applications sensitive to forward voltage drop or leakage current. The part is suitable for general-purpose rectification where these parameter variations are acceptable.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed are RoHS3 compliant with MSL 1 (unlimited moisture sensitivity level), matching the original ESH2DA R3G specifications.

Q: Which substitute part offers the best performance improvement?

A: The ESH1D offers the most significant performance improvement with a faster reverse recovery time of 15 ns (compared to 25 ns) and lower capacitance of 16 pF (compared to 25 pF). This part maintains the full -55°C to 175°C operating temperature range and is available in quantity.

Request Quote (Ships tomorrow)