ESH2C-M3/52T Equivalent & Substitute Parts

Part Overview

The ESH2C-M3/52T is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. This surface mount diode operates at 150 V DC reverse voltage with a 2 A average rectified current rating and is housed in a DO-214AA (SMB) package. The device is classified as a fast recovery diode with a reverse recovery time of 35 nanoseconds, making it suitable for applications requiring rapid switching characteristics. The part maintains Active product status and is RoHS3 compliant. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to inventory constraints, supply chain considerations, or design flexibility needs.

Substiute Parts

ESH2C-M3/52T
Vishay General Semiconductor - Diodes DivisionIn Stock: 974ESH2C-M3/52T Datasheet
ESH2C-M3/52T
Current Part
ESH2C-E3/52T
Vishay General Semiconductor - Diodes DivisionIn Stock: 10483ESH2C-E3/52T Datasheet
ESH2C-E3/52T
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 150 V
Current - Average Rectified (Io) 2 A
Voltage - Forward (Vf) (Max) @ If 930 mV @ 2 A mV
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 2 µA @ 150 V
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Package / Case DO-214AA, SMB
Mounting Type Surface Mount
Operating Temperature - Junction -55 to 175 °C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the ESH2C-M3/52T are identified based on strict electrical and mechanical parameter equivalence. The substitution logic is based on the following critical parameters:

Electrical Parameters:

  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 150 V
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)

Mechanical Parameters:

  • Package / Case: DO-214AA, SMB
  • Mounting Type: Surface Mount

Compliance Parameters:

  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Operating Temperature - Junction: -55°C to 175°C

Parts are classified as substitutes when all electrical ratings, mechanical package specifications, and compliance certifications match the main part. The ESH2C-E3/52T meets all these criteria and is therefore a direct parametric equivalent.

Parameter Comparison

Parameter ESH2C-M3/52T ESH2C-E3/52T Match
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Yes
Category Diodes, Rectifiers Diodes, Rectifiers Yes
Voltage - DC Reverse (Vr) (Max) 150 V 150 V Yes
Current - Average Rectified (Io) 2 A 2 A Yes
Voltage - Forward (Vf) (Max) @ If 930 mV @ 2 A 930 mV @ 2 A Yes
Reverse Recovery Time (trr) 35 ns 35 ns Yes
Current - Reverse Leakage @ Vr 2 µA @ 150 V 2 µA @ 150 V Yes
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Yes
Package / Case DO-214AA, SMB DO-214AA, SMB Yes
Mounting Type Surface Mount Surface Mount Yes
Operating Temperature - Junction -55°C to 175°C -55°C to 175°C Yes
RoHS Status ROHS3 Compliant ROHS3 Compliant Yes
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) Yes
Product Status Active Active Yes

Engineering Selection Recommendations

The ESH2C-E3/52T is a direct parametric equivalent to the ESH2C-M3/52T. Both parts are manufactured by Vishay General Semiconductor - Diodes Division and maintain identical electrical specifications, mechanical packaging, and compliance certifications. Selection between these parts is based on availability and supply chain requirements rather than technical performance differences.

Both parts are Active products with ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity ratings, ensuring compatibility with standard manufacturing and storage processes. The identical operating temperature range of -55°C to 175°C supports use in equivalent thermal environments.

The ESH2C-E3/52T currently maintains higher inventory availability (10,400 pieces) compared to the ESH2C-M3/52T (885 pieces), making it the preferred selection when supply continuity is a consideration.

Frequently Asked Questions (FAQ)

Q: Can the ESH2C-E3/52T be used as a direct replacement for the ESH2C-M3/52T?

A: Yes. The ESH2C-E3/52T is a direct parametric equivalent. All electrical ratings, including reverse voltage (150 V), average rectified current (2 A), forward voltage drop (930 mV @ 2 A), and reverse recovery time (35 ns) are identical. Both parts use the same DO-214AA (SMB) surface mount package and share identical compliance certifications.

Q: Are there any differences in package dimensions or PCB footprint between these parts?

A: No. Both parts use the DO-214AA (SMB) package specification. PCB footprints and land patterns are identical, requiring no design modifications for substitution.

Q: Do both parts have the same moisture sensitivity rating?

A: Yes. Both the ESH2C-M3/52T and ESH2C-E3/52T carry an MSL rating of 1 (Unlimited), indicating no moisture sensitivity restrictions for storage or handling.

Q: Are both parts RoHS compliant?

A: Yes. Both parts are ROHS3 compliant and meet current environmental and regulatory requirements for electronic component manufacturing and distribution.

Q: What is the difference between the M3 and E3 designations in the part numbers?

A: The M3 and E3 designations represent different tape and reel configurations or manufacturing batches from Vishay. The electrical and mechanical specifications remain identical. These designations do not affect functional performance or compatibility.

Q: Can these parts be used in high-temperature applications?

A: Yes. Both parts support an operating junction temperature range of -55°C to 175°C, suitable for standard industrial and commercial temperature environments.

Q: What is the reverse recovery time specification, and why is it important?

A: The reverse recovery time (trr) is 35 nanoseconds for both parts. This fast recovery characteristic enables rapid switching and is critical for applications requiring high-frequency rectification or switching power supplies.

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