ESH1D-M3/5AT Equivalent & Substitute Parts

Part Overview

The ESH1D-M3/5AT is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. This surface mount diode operates at 200 V DC reverse voltage with 1 A average rectified current in a DO-214AC (SMA) package. The part is classified as Active product status and is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are identified when design requirements necessitate alternative sourcing due to inventory constraints, supply chain considerations, or specific application qualifications such as automotive-grade certifications.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	900 mV @ 1 A	mV
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	-
Reverse Recovery Time (trr)	25	ns
Current - Reverse Leakage @ Vr	1	µA @ 200 V
Package / Case	DO-214AC, SMA	-
Mounting Type	Surface Mount	-
Operating Temperature - Junction	-55 to 175	°C
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitute parts for the ESH1D-M3/5AT are grouped based on strict electrical and mechanical parameter equivalence. The primary substitution criteria are:

Critical Parameters for Substitution:

Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1 A
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)

Grouping Categories:

Group 1: Parametric Equivalents (Vishay ESH1 Series) Parts ESH1D-E3/61T, ESH1DHE3_A/H, and ESH1DHE3_A/I maintain identical electrical specifications to the main part. ESH1DHE3_A/H and ESH1DHE3_A/I include automotive-grade qualification (AEC-Q101) for applications requiring automotive standards.

Group 2: Enhanced Performance Equivalents (Vishay FRED Pt® Series) Parts VS-1EMH02-M3/5AT and VS-1EMH02HM3/5AT provide improved reverse recovery time (15.2 ns versus 25 ns) while maintaining all other critical parameters. The HM variant includes AEC-Q101 automotive qualification.

Group 3: Manufacturer-Recommended Alternatives Parts EGF1D (onsemi), ES1D (EVVO Semi), ES1D-13-F (Diodes Incorporated), GF1D (Fairchild Semiconductor), and S1D (YAGEO) meet the core voltage, current, and package requirements. These parts exhibit variations in forward voltage, reverse recovery time, reverse leakage current, and operating temperature ranges.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ 1A [mV]	trr [ns]	Ir @ 200V [µA]	Package	Product Status	Automotive Grade
ESH1D-M3/5AT	Vishay	200	1	900	25	1	DO-214AC	Active	No
ESH1D-E3/61T	Vishay	200	1	900	25	1	DO-214AC	Active	No
ESH1DHE3_A/H	Vishay	200	1	900	25	1	DO-214AC	Active	Yes (AEC-Q101)
ESH1DHE3_A/I	Vishay	200	1	900	25	1	DO-214AC	Active	Yes (AEC-Q101)
VS-1EMH02-M3/5AT	Vishay	200	1	900	15.2	2	DO-214AC	Active	No
VS-1EMH02HM3/5AT	Vishay	200	1	900	15.2	2	DO-214AC	Active	Yes (AEC-Q101)
EGF1D	onsemi	200	1	1000	50	10	DO-214AC	Not For New Designs	No
ES1D	EVVO Semi	200	1	1000	35	5	DO-214AC	Active	No
ES1D-13-F	Diodes Incorporated	200	1	920	25	5	DO-214AC	Active	No
GF1D	Fairchild Semiconductor	200	1	1000	2000	5	DO-214AC	Active	No
S1D	YAGEO	200	1	-	-	-	DO-214AC	Active	No

Engineering Selection Recommendations

For Direct Replacement (Identical Electrical Performance): ESH1D-E3/61T is a parametric equivalent with identical specifications to ESH1D-M3/5AT. Both parts are Active status and RoHS3 compliant. Selection between these Vishay variants depends on packaging format and inventory availability.

For Automotive Applications: ESH1DHE3_A/H and ESH1DHE3_A/I are qualified to AEC-Q101 automotive standards while maintaining electrical equivalence to the main part. These variants are suitable for automotive-grade circuit designs requiring formal qualification documentation.

For Enhanced Performance (Reduced Reverse Recovery Time): VS-1EMH02-M3/5AT and VS-1EMH02HM3/5AT (FRED Pt® series) offer improved reverse recovery time of 15.2 ns compared to 25 ns in the main part. The HM variant includes AEC-Q101 qualification. These parts are suitable for applications where faster switching performance is beneficial.

For Alternative Sourcing: ES1D-13-F (Diodes Incorporated) provides close electrical equivalence with 920 mV forward voltage and 25 ns reverse recovery time, matching the main part's speed classification. This part is Active status with high inventory availability.

Not Recommended for New Designs: EGF1D (onsemi) is classified as Not For New Designs. GF1D (Fairchild Semiconductor) exhibits standard recovery characteristics (2 µs reverse recovery time) rather than fast recovery, making it unsuitable for applications requiring fast recovery performance.

Frequently Asked Questions (FAQ)

Q: Can ESH1D-E3/61T be used as a direct replacement for ESH1D-M3/5AT?

A: Yes. ESH1D-E3/61T is a parametric equivalent with identical electrical specifications: 200 V reverse voltage, 1 A average rectified current, 900 mV forward voltage at 1 A, 25 ns reverse recovery time, and 1 µA reverse leakage current. Both parts use DO-214AC (SMA) surface mount packaging. Selection depends on packaging format (tape & reel variant) and inventory availability.

Q: What is the difference between ESH1DHE3_A/H and ESH1DHE3_A/I?

A: Both parts are electrically identical to ESH1D-M3/5AT and include AEC-Q101 automotive qualification. The designation difference (H versus I) reflects different manufacturing or qualification batches. Both are suitable for automotive applications requiring formal qualification documentation.

Q: Why do VS-1EMH02-M3/5AT and VS-1EMH02HM3/5AT have different reverse recovery times?

A: VS-1EMH02-M3/5AT and VS-1EMH02HM3/5AT are FRED Pt® series diodes with 15.2 ns reverse recovery time, compared to 25 ns in the ESH1D-M3/5AT. This improved performance is a design characteristic of the FRED Pt® technology. The HM variant includes AEC-Q101 automotive qualification.

Q: Is EGF1D suitable as a substitute?

A: EGF1D meets the core voltage (200 V) and current (1 A) requirements and uses the same DO-214AC package. However, EGF1D is classified as Not For New Designs and exhibits slower reverse recovery time (50 ns versus 25 ns). It is not recommended for new circuit designs.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Fast recovery diodes have reverse recovery time ≤ 500 ns and are suitable for high-frequency switching applications. Standard recovery diodes have reverse recovery time > 500 ns. GF1D (Fairchild) exhibits standard recovery (2 µs) and is not suitable for applications requiring fast recovery performance.

Q: Can parts with different forward voltages be interchanged?

A: Forward voltage differences affect circuit performance. ESH1D-M3/5AT specifies 900 mV at 1 A. ES1D and EGF1D specify 1000 mV, while ES1D-13-F specifies 920 mV. In precision applications, these differences may affect circuit operation. Verify forward voltage compatibility with circuit design requirements.

Q: Are all substitute parts RoHS3 compliant?

A: All listed substitute parts are RoHS3 compliant. All parts have Moisture Sensitivity Level (MSL) 1, indicating unlimited shelf life under controlled storage conditions.

Q: What is the operating temperature range difference?

A: ESH1D-M3/5AT operates from -55°C to 175°C. ES1D and ES1D-13-F operate from -55°C to 150°C, providing a narrower upper temperature limit. EGF1D and GF1D operate from -65°C to 175°C, providing extended lower temperature capability. Verify operating temperature requirements for your application.

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