ESH1B-E3/5AT Equivalent & Substitute Parts

Part Overview

The ESH1B-E3/5AT is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division, rated for 100 V DC reverse voltage and 1 A average rectified current in a surface mount DO-214AC (SMA) package. This part is classified as Active and complies with RoHS3 and REACH requirements. Equivalent and substitute parts are identified to support procurement flexibility, inventory management, and design continuity when the primary part becomes unavailable or when alternative sourcing is required.

Key Parameters

Parameter	Value
Voltage - DC Reverse (Vr) (Max)	100 V
Current - Average Rectified (Io)	1 A
Voltage - Forward (Vf) (Max) @ If	900 mV @ 1 A
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	25 ns
Current - Reverse Leakage @ Vr	1 µA @ 100 V
Mounting Type	Surface Mount
Package / Case	DO-214AC, SMA
Operating Temperature - Junction	-55°C ~ 175°C
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the ESH1B-E3/5AT are grouped into three categories based on electrical and mechanical compatibility:

Parametric Equivalents share identical or functionally equivalent electrical specifications within the allowed tolerances for this product category. These parts maintain the same voltage rating (100 V), current rating (1 A), package type (DO-214AC/SMA), and operating temperature range. Parametric equivalents include ESH1B-E3/61T, VS-1EMH01-M3/5AT, and ESH1B from Taiwan Semiconductor Corporation.

Direct Manufacturer Alternatives meet the core electrical requirements (100 V, 1 A, DO-214AC/SMA) but may employ different semiconductor technology (such as Schottky diodes) or have variations in secondary parameters such as forward voltage, reverse recovery time, or reverse leakage current. The STPS1H100A from STMicroelectronics represents a Schottky technology alternative with lower forward voltage (770 mV @ 1 A) compared to the standard rectifier technology of the main part.

Manufacturer-Recommended Substitutes are designated by original equipment manufacturers as functional replacements. These parts maintain the 100 V / 1 A electrical envelope and DO-214AC/SMA package but may have different technology classifications (standard or fast recovery), reverse recovery times, or reverse leakage characteristics. This group includes EGF1B (Fairchild Semiconductor), ES1B (YAGEO), ES1B-13-F (Diodes Incorporated), ES1B-LTP (Micro Commercial Co), GF1B (onsemi), and GS1B-LTP (Micro Commercial Co).

Substitution is determined by matching the following key parameters: Voltage - DC Reverse (Vr) (Max) = 100 V, Current - Average Rectified (Io) = 1 A, Package / Case = DO-214AC/SMA, and Mounting Type = Surface Mount.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vr (Max)	Io	Vf (Max) @ If	Speed	trr	Ir @ Vr	Package	Temp Range	Status
ESH1B-E3/5AT	Vishay	100 V	1 A	900 mV @ 1 A	Fast Recovery ≤ 500ns	25 ns	1 µA @ 100 V	DO-214AC (SMA)	-55°C ~ 175°C	Active
ESH1B-E3/61T	Vishay	100 V	1 A	900 mV @ 1 A	Fast Recovery ≤ 500ns	25 ns	1 µA @ 100 V	DO-214AC (SMA)	-55°C ~ 175°C	Active
VS-1EMH01-M3/5AT	Vishay	100 V	1 A	900 mV @ 1 A	Fast Recovery ≤ 500ns	15.2 ns	2 µA @ 100 V	DO-214AC (SMA)	-55°C ~ 175°C	Active
STPS1H100A	STMicroelectronics	100 V	1 A	770 mV @ 1 A	Fast Recovery ≤ 500ns	—	4 µA @ 100 V	DO-214AC (SMA)	—	Active
EGF1B	Fairchild Semiconductor	100 V	1 A	1 V @ 1 A	Fast Recovery ≤ 500ns	50 ns	10 µA @ 100 V	DO-214AC (SMA)	-65°C ~ 175°C	Active
ES1B	YAGEO	100 V	1 A	0.95 V	—	—	—	DO-214AC	—	Active
ES1B-13-F	Diodes Incorporated	100 V	1 A	920 mV @ 1 A	Fast Recovery ≤ 500ns	25 ns	5 µA @ 100 V	DO-214AC (SMA)	-55°C ~ 150°C	Active
ES1B-LTP	Micro Commercial Co	100 V	1 A	950 mV @ 1 A	Fast Recovery ≤ 500ns	35 ns	5 µA @ 100 V	DO-214AC (SMA)	-65°C ~ 175°C	Not For New Designs
GF1B	onsemi	100 V	1 A	1 V @ 1 A	Standard Recovery >500ns	2 µs	5 µA @ 100 V	DO-214AC (SMA)	-65°C ~ 175°C	Not For New Designs
GS1B-LTP	Micro Commercial Co	100 V	1 A	1 V @ 1 A	Standard Recovery >500ns	—	10 µA @ 100 V	DO-214AC (SMA)	-55°C ~ 150°C	Not For New Designs
ESH1B	Taiwan Semiconductor Corporation	100 V	1 A	900 mV @ 1 A	Fast Recovery ≤ 500ns	15 ns	1 µA @ 100 V	DO-214AC (SMA)	-55°C ~ 175°C	Active

Engineering Selection Recommendations

For New Designs: Select from parts with Active product status and full compliance documentation. ESH1B-E3/61T, VS-1EMH01-M3/5AT, ESH1B (Taiwan Semiconductor Corporation), ES1B-13-F, and STPS1H100A are all designated Active. These parts provide current manufacturing support and supply chain continuity.

For Existing Designs: Parts designated "Not For New Designs" (ES1B-LTP, GF1B, GS1B-LTP) remain functionally compatible with the ESH1B-E3/5AT but should not be selected for new product development. These parts are suitable only for sustaining production of existing designs.

Technology Considerations: The ESH1B-E3/5AT employs standard fast recovery rectifier technology. The STPS1H100A uses Schottky technology, which provides lower forward voltage (770 mV vs. 900 mV) and may affect circuit performance in applications sensitive to forward voltage drop. Parts classified as Standard Recovery (GF1B, GS1B-LTP) have significantly longer reverse recovery times (2 µs and unspecified, respectively) compared to the main part (25 ns) and are suitable only for low-frequency applications.

Compliance and Certifications: All listed parts comply with RoHS3 and REACH requirements. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts with specified MSL data, indicating no special moisture handling requirements.

Packaging and Mounting: All substitute parts use the DO-214AC (SMA) surface mount package, ensuring mechanical and thermal compatibility with the original design.

Frequently Asked Questions (FAQ)

Q: Can I substitute the ESH1B-E3/5AT with any of the listed parts without circuit modification?

A: Parts with identical electrical specifications (ESH1B-E3/61T, VS-1EMH01-M3/5AT, ESH1B from Taiwan Semiconductor Corporation, and ES1B-13-F) are direct substitutes. Parts with different forward voltage characteristics (STPS1H100A at 770 mV, EGF1B at 1 V, GF1B at 1 V, GS1B-LTP at 1 V) may require circuit evaluation if the application is sensitive to forward voltage drop. Parts with significantly different reverse recovery times (GF1B at 2 µs, GS1B-LTP unspecified) are suitable only for low-frequency applications.

Q: What is the difference between the ESH1B-E3/5AT and the STPS1H100A?

A: Both parts are rated 100 V / 1 A in DO-214AC packages. The ESH1B-E3/5AT is a standard fast recovery rectifier with 900 mV forward voltage and 25 ns reverse recovery time. The STPS1H100A is a Schottky diode with lower forward voltage (770 mV) and different reverse recovery characteristics. Schottky diodes are preferred in high-frequency switching applications due to lower forward voltage drop and faster switching, but they typically have higher reverse leakage current (4 µA vs. 1 µA).

Q: Why are some parts marked "Not For New Designs"?

A: Parts designated "Not For New Designs" (ES1B-LTP, GF1B, GS1B-LTP) are legacy products that remain available for sustaining production of existing designs but are not recommended for new product development. This designation indicates that the manufacturer is not actively promoting these parts for new applications and may eventually discontinue them.

Q: Are all substitute parts available in the same packaging format?

A: Yes, all listed substitute parts use the DO-214AC (SMA) surface mount package, ensuring identical PCB footprint and mounting compatibility. Packaging format (Tape & Reel or Cut Tape) may vary by supplier but does not affect electrical or mechanical compatibility.

Q: What is the significance of reverse recovery time (trr) in selecting a substitute?

A: Reverse recovery time determines how quickly the diode transitions from conducting to blocking state. The ESH1B-E3/5AT has a trr of 25 ns (fast recovery). Parts with similar trr values (ESH1B-E3/61T at 25 ns, VS-1EMH01-M3/5AT at 15.2 ns, ESH1B at 15 ns, ES1B-13-F at 25 ns) are suitable for high-frequency applications. Parts with longer trr values (ES1B-LTP at 35 ns, EGF1B at 50 ns, GF1B at 2 µs) are better suited for low-frequency or DC applications.

Q: Can I use the ESH1B from Taiwan Semiconductor Corporation as a direct replacement?

A: Yes, the ESH1B from Taiwan Semiconductor Corporation is a parametric equivalent with identical voltage and current ratings, the same DO-214AC package, and comparable electrical characteristics (900 mV forward voltage, 15 ns reverse recovery time, 1 µA reverse leakage). It is designated Active and complies with all relevant standards.

Q: What is the difference between ESH1B-E3/5AT and ESH1B-E3/61T?

A: Both parts are manufactured by Vishay and share identical electrical specifications (100 V, 1 A, 900 mV forward voltage, 25 ns reverse recovery time, 1 µA reverse leakage). The difference is in the packaging reel configuration (5AT vs. 61T), which affects tape and reel specifications but not electrical or mechanical performance. Both are Active products.

Q: Is the VS-1EMH01-M3/5AT a better choice than the ESH1B-E3/5AT?

A: The VS-1EMH01-M3/5AT is a parametric equivalent from Vishay's FRED Pt® series with slightly faster reverse recovery time (15.2 ns vs. 25 ns) and marginally higher reverse leakage (2 µA vs. 1 µA). The faster recovery time may provide performance benefits in high-frequency switching applications, but both parts are functionally compatible for standard rectification applications.

Q: What are the temperature range implications when selecting a substitute?

A: The ESH1B-E3/5AT operates from -55°C to 175°C. Most substitute parts share this range. However, ES1B-13-F and GS1B-LTP have a reduced upper limit of 150°C, which may be unsuitable for applications requiring operation at temperatures above 150°C. EGF1B, ES1B-LTP, GF1B, and ESH1B from Taiwan Semiconductor Corporation support the full -55°C to 175°C range.

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