ESD8351HT1G Equivalent & Substitute Parts

Part Overview

The ESD8351HT1G is a unidirectional Transient Voltage Suppressor (TVS) diode manufactured by onsemi, designed for general-purpose overvoltage protection in surface-mount applications. Featuring a 3.3V reverse standoff voltage and 11.2V maximum clamping voltage, this component provides transient suppression with a 5A peak pulse current rating in a compact SOD-323 package.

The product is currently classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production or maintenance requirements for systems utilizing this component.

Substiute Parts

ESD8351HT1G
onsemiIn Stock: 64293ESD8351HT1G Datasheet
ESD8351HT1G
Current Part
PESD5V0C1BSFYL
Nexperia USA Inc.In Stock: 1000222PESD5V0C1BSFYL Datasheet
PESD5V0C1BSFYL
Similar
TSM085N03PQ33 RGG
Taiwan Semiconductor CorporationIn Stock: 2794TSM085N03PQ33 RGG Datasheet
TSM085N03PQ33 RGG
Similar

Key Parameters

Parameter Value Unit
Manufacturer Part Number ESD8351HT1G
Manufacturer onsemi
Category Transient Voltage Suppressors (TVS)
Type Zener, Unidirectional
Voltage - Reverse Standoff (Typ) 3.3V Max
Voltage - Breakdown (Min) 5.5V
Voltage - Clamping (Max) @ Ipp 11.2V
Current - Peak Pulse (8/20µs) 5A
Capacitance @ 1MHz 0.37pF
Operating Temperature Range -55°C to 125°C TJ
Package / Case SOD-323 (SC-76)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the ESD8351HT1G requires evaluation based on the following critical parameters:

Primary Substitution Criteria:

  • Device category: Transient Voltage Suppressors (TVS)
  • Polarity: Unidirectional or bidirectional configuration
  • Voltage - Reverse Standoff: 3.3V nominal operating point
  • Voltage - Clamping (Max): Maximum 11.2V at peak pulse current
  • Current - Peak Pulse: Minimum 5A at 8/20µs waveform
  • Package compatibility: Surface-mount form factor
  • Compliance: RoHS3 and REACH requirements

Identified Substitutes:

  1. PESD5V0C1BSFYL (Nexperia USA Inc.) — Active product status. Bidirectional TVS diode with 5V reverse standoff and 6.5V typical clamping voltage. Supports 9A peak pulse current. Operates within -40°C to 125°C range. DSN0603-2 package (0201 metric equivalent). Meets RoHS3 and REACH compliance.

  2. TSM085N03PQ33 RGG (Taiwan Semiconductor Corporation) — Active product status. N-Channel MOSFET with 30V drain-source voltage rating and 52A continuous drain current. This component represents a different device category (transistor vs. TVS diode) and is listed as a substitute based on provided input data only. Operates within -55°C to 150°C range. 8-PDFN package. Meets RoHS3 and REACH compliance.

Parameter Comparison

Parameter ESD8351HT1G (Main) PESD5V0C1BSFYL TSM085N03PQ33 RGG
Manufacturer onsemi Nexperia USA Inc. Taiwan Semiconductor Corporation
Category TVS Diode TVS Diode MOSFET
Product Status Obsolete Active Active
Type Zener, Unidirectional Zener, Bidirectional N-Channel MOSFET
Voltage - Reverse Standoff (Typ) 3.3V 5V N/A
Voltage - Clamping (Max) @ Ipp 11.2V 6.5V (Typ) N/A
Current - Peak Pulse (8/20µs) 5A 9A N/A
Operating Temperature Range -55°C to 125°C (TJ) -40°C to 125°C (TA) -55°C to 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SOD-323 DSN0603-2 (0201 Metric) 8-PDFN (3.1x3.1)
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
MSL Rating 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

PESD5V0C1BSFYL is the primary substitute candidate within the TVS diode category. This component maintains active product status and full RoHS3 compliance. The bidirectional configuration provides protection in both polarities, whereas the ESD8351HT1G is unidirectional. The PESD5V0C1BSFYL operates at a higher reverse standoff voltage (5V vs. 3.3V) and lower clamping voltage (6.5V typical vs. 11.2V maximum), with superior peak pulse current handling (9A vs. 5A). Package form factor differs (DSN0603-2 vs. SOD-323), requiring PCB layout modification. Operating temperature range is narrower (-40°C to 125°C vs. -55°C to 125°C).

TSM085N03PQ33 RGG is listed as a substitute based on provided input data. This component is a MOSFET, representing a fundamentally different device category and functional purpose compared to the TVS diode. Selection of this component requires independent verification of circuit-level compatibility and application requirements. The component maintains active product status and full RoHS3 compliance.

Both substitute parts meet regulatory compliance requirements (RoHS3, REACH unaffected, EAR99 classification). Selection should be based on specific circuit protection requirements, voltage thresholds, and package constraints of the target application.

Frequently Asked Questions (FAQ)

Q: Can PESD5V0C1BSFYL directly replace ESD8351HT1G without circuit modification?

A: Direct replacement requires evaluation of three factors: (1) Reverse standoff voltage difference (5V vs. 3.3V) may affect circuit bias conditions; (2) Clamping voltage is lower (6.5V typical vs. 11.2V maximum), providing tighter transient suppression; (3) Package change from SOD-323 to DSN0603-2 requires PCB layout redesign. Functional compatibility depends on application-specific voltage thresholds and transient energy levels.

Q: What is the significance of bidirectional vs. unidirectional TVS configuration?

A: The ESD8351HT1G is unidirectional, providing protection in one polarity direction only. The PESD5V0C1BSFYL is bidirectional, protecting against transients in both polarities. Unidirectional devices are used in applications with defined polarity (such as power supply rails). Bidirectional devices protect against transients regardless of polarity direction. Circuit topology determines which configuration is appropriate.

Q: Why is TSM085N03PQ33 RGG listed as a substitute for a TVS diode?

A: This component is listed based on provided input data. The TSM085N03PQ33 RGG is a MOSFET, not a TVS diode. Functional equivalence cannot be established between these device categories. This listing should be independently verified against application requirements before consideration.

Q: Are there package compatibility concerns with substitute parts?

A: Yes. The ESD8351HT1G uses SOD-323 package. The PESD5V0C1BSFYL uses DSN0603-2 (0201 metric) package. The TSM085N03PQ33 RGG uses 8-PDFN package. Each package has different footprint dimensions, pin spacing, and PCB layout requirements. Package change necessitates PCB redesign and re-qualification of assembly processes.

Q: Do all substitute parts meet the same compliance standards?

A: Yes. Both PESD5V0C1BSFYL and TSM085N03PQ33 RGG are RoHS3 compliant, REACH unaffected, and classified as EAR99 for export control purposes. Moisture sensitivity level is 1 (Unlimited) for all components, indicating no special storage or handling requirements.

Q: What is the operating temperature range consideration for substitution?

A: The ESD8351HT1G operates from -55°C to 125°C (junction temperature). The PESD5V0C1BSFYL operates from -40°C to 125°C (ambient temperature), with a narrower low-temperature range. The TSM085N03PQ33 RGG operates from -55°C to 150°C (junction temperature), with extended high-temperature capability. Application environment determines whether temperature range differences are acceptable.

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