ES3J V7G Equivalent & Substitute Parts

Part Overview

The ES3J V7G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 600 V DC reverse voltage and 3 A average rectified current in a surface mount DO-214AB (SMC) package. This component is classified as discontinued at DiGi Electronics, necessitating identification of equivalent and substitute parts for ongoing design requirements and procurement needs. Equivalent alternatives maintain identical or superior electrical performance characteristics while offering active product status and assured supply availability.

Substiute Parts

ES3J V7G
Taiwan Semiconductor CorporationIn Stock: 2329ES3J V7G Datasheet
ES3J V7G
Current Part
ES3J
Good-Ark SemiconductorIn Stock: 23819ES3J Datasheet
ES3J
Direct
ES3JH
Taiwan Semiconductor CorporationIn Stock: 3823ES3JH Datasheet
ES3JH
Parametric Equivalent
ER3J_R1_00001
Panjit International Inc.In Stock: 42044ER3J_R1_00001 Datasheet
ER3J_R1_00001
Parametric Equivalent
UF3J_R1_00001
Panjit International Inc.In Stock: 4163UF3J_R1_00001 Datasheet
UF3J_R1_00001
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 1.7 @ 3 A V
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V
Package / Case DO-214AB, SMC
Mounting Type Surface Mount
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the ES3J V7G is determined by strict equivalence across the following critical parameters:

Primary Equivalence Criteria:

  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
  • Package / Case: DO-214AB, SMC
  • Mounting Type: Surface Mount
  • Operating Temperature - Junction: -55°C to 150°C
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

Secondary Parameters (Allowable Variation):

  • Reverse Recovery Time (trr): Specified at 35 ns for the main part; substitute parts with trr ≤ 100 ns remain functionally equivalent
  • Current - Reverse Leakage @ Vr: Specified at 10 µA for the main part; substitute parts with leakage ≤ 10 µA are acceptable
  • Capacitance @ Vr, F: Specified at 30 pF for the main part; substitute parts with capacitance ≤ 63 pF are acceptable

All identified substitute parts maintain compliance with RoHS3, REACH Unaffected status, and MSL 1 classification, ensuring direct interchangeability in existing designs.

Parameter Comparison

Parameter ES3J V7G (Main) ES3J (Good-Ark) ES3JH (TSC) ER3J_R1_00001 (Panjit) UF3J_R1_00001 (Panjit)
Manufacturer Taiwan Semiconductor Corporation Good-Ark Semiconductor Taiwan Semiconductor Corporation Panjit International Inc. Panjit International Inc.
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 600 V
Current - Average Rectified (Io) 3 A 3 A 3 A 3 A 3 A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 3 A 1.7 V @ 3 A 1.7 V @ 3 A 1.7 V @ 3 A 1.7 V @ 3 A
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 35 ns 35 ns 35 ns 100 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V 10 µA @ 600 V 10 µA @ 600 V 1 µA @ 600 V 1 µA @ 600 V
Capacitance @ Vr, F 30 pF @ 4V, 1MHz 40 pF @ 4V, 1MHz 30 pF @ 4V, 1MHz 45 pF @ 4V, 1MHz 63 pF @ 4V, 1MHz
Package / Case DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Operating Temperature - Junction -55°C to 150°C -55°C to 150°C -55°C to 150°C -55°C to 150°C -55°C to 150°C
Product Status Discontinued at DiGi Electronics Active Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

Direct Manufacturer Equivalent: The ES3J manufactured by Good-Ark Semiconductor provides direct parametric equivalence to the ES3J V7G. This part maintains identical electrical specifications across all critical parameters and offers active product status with substantial inventory availability (23,710 pcs). The Good-Ark ES3J is suitable for immediate substitution in applications currently specified for the discontinued Taiwan Semiconductor Corporation ES3J V7G.

Parametric Equivalent - Standard Grade: The ES3JH manufactured by Taiwan Semiconductor Corporation is a parametric equivalent offering identical electrical performance to the main part. This variant is qualified to AEC-Q101 automotive standards and carries active product status. The ES3JH differs only in packaging format (Tape & Reel versus Cut Tape) and automotive qualification, making it appropriate for applications requiring automotive-grade components or tape-and-reel packaging.

Parametric Equivalent - Alternative Manufacturers: The ER3J_R1_00001 and UF3J_R1_00001 manufactured by Panjit International Inc. are parametric equivalents meeting all primary equivalence criteria. Both parts maintain 600 V reverse voltage, 3 A current rating, and identical forward voltage characteristics. The ER3J_R1_00001 exhibits superior reverse leakage performance (1 µA versus 10 µA) and is available in high volume (42,000 pcs). The UF3J_R1_00001 exhibits extended reverse recovery time (100 ns versus 35 ns) and higher capacitance (63 pF versus 30 pF), remaining within acceptable substitution parameters for applications tolerant of these variations.

Compliance and Certification: All identified substitute parts maintain ROHS3 compliance, REACH Unaffected status, and MSL 1 classification, ensuring regulatory and environmental compatibility with the original ES3J V7G specification.

Frequently Asked Questions (FAQ)

Q: Can the ES3J from Good-Ark Semiconductor be used as a direct replacement for the ES3J V7G?

A: Yes. The Good-Ark ES3J maintains identical electrical specifications across all critical parameters including voltage rating, current capacity, forward voltage, recovery time, and reverse leakage. Both parts are housed in DO-214AB (SMC) surface mount packages and operate across the same temperature range. The primary difference is packaging format (Cut Tape versus Digi-Reel) and active product status.

Q: What is the difference between the ES3JH and the ES3J V7G?

A: The ES3JH is electrically identical to the ES3J V7G across all primary parameters. The ES3JH is supplied in Tape & Reel packaging rather than Cut Tape and carries AEC-Q101 automotive qualification. Both parts are manufactured by Taiwan Semiconductor Corporation and maintain identical reverse recovery time (35 ns) and capacitance (30 pF).

Q: Are the Panjit ER3J_R1_00001 and UF3J_R1_00001 suitable substitutes?

A: Both Panjit parts meet primary equivalence criteria and are functionally interchangeable. The ER3J_R1_00001 offers superior reverse leakage performance (1 µA). The UF3J_R1_00001 exhibits extended reverse recovery time (100 ns) and higher capacitance (63 pF), which remain within acceptable parameters for most applications. Selection depends on specific circuit requirements regarding switching speed and capacitive loading.

Q: Does packaging format affect electrical performance?

A: No. Packaging format (Cut Tape, Digi-Reel, or Tape & Reel) affects only procurement and handling logistics, not electrical performance. All identified substitute parts in DO-214AB (SMC) packages are electrically equivalent regardless of packaging format.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All identified substitute parts maintain ROHS3 compliance and REACH Unaffected status, ensuring regulatory compatibility with the original ES3J V7G specification.

Q: What is the significance of reverse recovery time variation among substitute parts?

A: Reverse recovery time (trr) affects switching speed and switching losses in rectifier applications. The ES3J V7G specifies 35 ns. The ER3J_R1_00001 maintains 35 ns, while the UF3J_R1_00001 specifies 100 ns. For applications sensitive to switching transients or operating at high frequencies, the 35 ns variants are preferred. For lower-frequency applications, the 100 ns variant remains acceptable.

Q: What is the significance of capacitance variation among substitute parts?

A: Junction capacitance affects high-frequency performance and switching characteristics. The ES3J V7G specifies 30 pF. Substitute parts range from 30 pF (ES3JH) to 63 pF (UF3J_R1_00001). Higher capacitance may increase switching losses in high-frequency applications but remains acceptable for standard rectification circuits operating below 100 kHz.

Q: Can I mix different substitute parts in the same design?

A: Yes, provided all parts meet the application's electrical requirements. All identified substitutes maintain identical voltage and current ratings, forward voltage characteristics, and temperature range. Mixing parts with different reverse recovery times or capacitance values is acceptable if the circuit design accommodates the maximum specified values.

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