ES3J Equivalent & Substitute Parts

Part Overview

The ES3J is a superfast recovery rectifier diode manufactured by onsemi, rated for 600 V DC reverse voltage and 3 A average rectified current in a surface mount SMC (DO-214AB) package. This component is classified as "Not For New Designs," indicating it has been superseded in onsemi's product portfolio. Identifying equivalent and substitute parts is necessary for applications requiring continued support, legacy system maintenance, or when the original part becomes unavailable. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating packaging and recovery speed requirements.

Substiute Parts

ES3J
onsemiIn Stock: 23809ES3J Datasheet
ES3J
Current Part
MURS360T3G
onsemiIn Stock: 105192MURS360T3G Datasheet
MURS360T3G
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S3J
Diotec SemiconductorIn Stock: 912S3J Datasheet
S3J
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CMR3-06 BK PBFREE
Central Semiconductor CorpIn Stock: 991CMR3-06 BK PBFREE Datasheet
CMR3-06 BK PBFREE
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CMR3-06 TR13 PBFREE
Central Semiconductor CorpIn Stock: 7181CMR3-06 TR13 PBFREE Datasheet
CMR3-06 TR13 PBFREE
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ER3J-TP
Micro Commercial CoIn Stock: 4223ER3J-TP Datasheet
ER3J-TP
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ER3J_R1_00001
Panjit International Inc.In Stock: 42044ER3J_R1_00001 Datasheet
ER3J_R1_00001
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FR3J-TP
Micro Commercial CoIn Stock: 6380FR3J-TP Datasheet
FR3J-TP
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MURS360-E3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 18334MURS360-E3/57T Datasheet
MURS360-E3/57T
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S3J-13-F
Diodes IncorporatedIn Stock: 101108S3J-13-F Datasheet
S3J-13-F
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S3J-TP
Micro Commercial CoIn Stock: 39795S3J-TP Datasheet
S3J-TP
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S5JC-13-F
Diodes IncorporatedIn Stock: 299117S5JC-13-F Datasheet
S5JC-13-F
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SMLJ60S6-TP
Micro Commercial CoIn Stock: 1924SMLJ60S6-TP Datasheet
SMLJ60S6-TP
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STTH3R06S
STMicroelectronicsIn Stock: 7838STTH3R06S Datasheet
STTH3R06S
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US3J
Diotec SemiconductorIn Stock: 5954US3J Datasheet
US3J
Parametric Equivalent
US3J
Diotec SemiconductorIn Stock: 5954US3J Datasheet
US3J
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 1.7 @ 3 A V
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V
Package / Case DO-214AB, SMC
Operating Temperature - Junction -50 to 150 °C
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution eligibility for the ES3J is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): Must equal or exceed 600 V
  • Current - Average Rectified (Io): Must equal or exceed 3 A
  • Package / Case: Must be DO-214AB or SMC equivalent
  • Mounting Type: Must be Surface Mount
  • RoHS Status: Must be ROHS3 Compliant

Secondary Compatibility Parameters:

  • Voltage - Forward (Vf) (Max) @ If: Acceptable range 1.15 V to 1.7 V @ 3 A
  • Reverse Recovery Time (trr): Fast Recovery classification (≤ 500ns, > 200mA) or Standard Recovery (> 500ns)
  • Operating Temperature - Junction: Minimum -50°C, maximum 150°C or higher
  • Current - Reverse Leakage @ Vr: Acceptable range 1 µA to 10 µA @ 600 V

All substitute parts listed meet the primary criteria. Variations in secondary parameters reflect different manufacturer implementations while maintaining functional compatibility within the 600 V / 3 A / SMC package specification.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ 3A [V] trr [ns] Ir @ 600V [µA] Package Tj Range [°C] Product Status
ES3J onsemi 600 3 1.7 35 10 DO-214AB, SMC -50 to 150 Not For New Designs
MURS360T3G onsemi 600 3 1.25 75 10 DO-214AB, SMC -65 to 175 Active
S3J Diotec Semiconductor 600 3 1.15 1500 5 DO-214AB, SMC -50 to 150 Active
CMR3-06 TR13 PBFREE Central Semiconductor Corp 600 3 1.2 35 5 DO-214AB, SMC -65 to 175 Active
ER3J-TP Micro Commercial Co 600 3 1.7 35 5 DO-214AB, SMC -50 to 175 Active
ER3J_R1_00001 Panjit International Inc. 600 3 1.7 35 1 DO-214AB, SMC -55 to 150 Active
FR3J-TP Micro Commercial Co 600 3 1.3 250 10 DO-214AB, SMC -55 to 150 Active
MURS360-E3/57T Vishay General Semiconductor - Diodes Division 600 3 1.28 75 10 DO-214AB, SMC -65 to 175 Active
S3J-13-F Diodes Incorporated 600 3 1.15 1500 10 DO-214AB, SMC -65 to 150 Active
S3J-TP Micro Commercial Co 600 3 1.2 1500 10 DO-214AB, SMC -55 to 150 Active

Engineering Selection Recommendations

Active Product Status Advantage: All listed substitute parts carry "Active" product status, ensuring continued manufacturer support, availability, and compliance with current regulatory standards. The ES3J, classified as "Not For New Designs," lacks these assurances.

Compliance and Certification: All substitute parts are ROHS3 Compliant and REACH Unaffected, matching the ES3J's regulatory posture. Moisture Sensitivity Level (MSL) is uniformly rated at 1 (Unlimited) across all candidates, indicating no special moisture handling requirements during storage or assembly.

Recovery Speed Considerations: The ES3J exhibits fast recovery characteristics (35 ns trr). Substitute parts fall into two categories:

  • Fast Recovery (≤ 500ns): MURS360T3G, CMR3-06 TR13 PBFREE, ER3J-TP, ER3J_R1_00001, FR3J-TP, and MURS360-E3/57T maintain fast recovery performance suitable for high-frequency switching applications.
  • Standard Recovery (> 500ns): S3J, S3J-13-F, and S3J-TP employ standard recovery characteristics, appropriate for lower-frequency rectification where switching speed is not critical.

Forward Voltage Characteristics: Forward voltage at 3 A ranges from 1.15 V to 1.7 V across all parts. The ES3J operates at the upper limit (1.7 V). Parts with lower forward voltage (MURS360T3G at 1.25 V, S3J at 1.15 V, CMR3-06 TR13 PBFREE at 1.2 V) reduce power dissipation in thermal-sensitive applications.

Temperature Range: The ES3J operates from -50°C to 150°C. Several substitutes extend this range to -65°C to 175°C (MURS360T3G, CMR3-06 TR13 PBFREE, MURS360-E3/57T, S3J-13-F), providing enhanced thermal margin for demanding environments.

Reverse Leakage Current: Leakage current specifications range from 1 µA to 10 µA at 600 V. The ES3J and most substitutes specify 10 µA. ER3J_R1_00001 offers superior leakage performance at 1 µA, beneficial for high-impedance circuit applications.

Frequently Asked Questions (FAQ)

Q: Can I directly replace ES3J with any of the listed substitute parts?

A: Yes, all listed parts meet the primary substitution criteria: 600 V reverse voltage rating, 3 A average rectified current, DO-214AB/SMC package, surface mount configuration, and ROHS3 compliance. Physical footprint compatibility is identical. Electrical performance differences exist in forward voltage, recovery time, and leakage current, which may affect circuit behavior depending on application requirements.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Fast recovery diodes (trr ≤ 500ns) exhibit shorter reverse recovery time, reducing switching losses and enabling operation at higher frequencies. Standard recovery diodes (trr > 500ns) are suitable for lower-frequency applications where switching speed is not a limiting factor. The ES3J is a fast recovery device. If your application requires fast switching, select from MURS360T3G, CMR3-06 TR13 PBFREE, ER3J-TP, ER3J_R1_00001, FR3J-TP, or MURS360-E3/57T.

Q: Does forward voltage variation affect my circuit?

A: Forward voltage differences directly impact power dissipation and voltage drop across the diode. The ES3J operates at 1.7 V @ 3 A. Substitutes range from 1.15 V to 1.7 V. Lower forward voltage reduces heat generation and improves efficiency. If thermal management is critical, consider MURS360T3G (1.25 V), S3J (1.15 V), or CMR3-06 TR13 PBFREE (1.2 V).

Q: Are there packaging differences between substitute parts?

A: All substitute parts use the DO-214AB (SMC) surface mount package, ensuring identical PCB footprint compatibility. Packaging format varies: some are supplied in Cut Tape (CT), others in Tape & Reel (TR), and one in Bulk. These differences affect procurement and assembly logistics but not electrical or mechanical compatibility.

Q: Which substitute offers the best overall performance match to ES3J?

A: ER3J-TP and ER3J_R1_00001 provide the closest electrical match, both featuring 1.7 V forward voltage and 35 ns reverse recovery time identical to the ES3J. ER3J_R1_00001 additionally offers superior reverse leakage current (1 µA vs. 10 µA) and extended temperature range (-55°C to 150°C). Both are Active products with full manufacturer support.

Q: Can I use a standard recovery diode (S3J, S3J-13-F, S3J-TP) as a replacement for the fast recovery ES3J?

A: Standard recovery diodes can replace fast recovery diodes in low-frequency rectification circuits where switching speed is not critical. However, in high-frequency switching applications, standard recovery diodes will exhibit increased switching losses and potential circuit instability. Confirm your application's frequency requirements before selecting a standard recovery substitute.

Q: What is the significance of the "Not For New Designs" status on the ES3J?

A: This designation indicates that onsemi has discontinued the ES3J for new product development. Existing inventory may remain available, but the manufacturer provides no guarantee of long-term supply or design support. For new designs or long-term production, select an Active substitute part such as MURS360T3G, CMR3-06 TR13 PBFREE, or ER3J-TP.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all listed substitute parts are ROHS3 Compliant and REACH Unaffected, matching the ES3J's regulatory compliance. This ensures compatibility with modern manufacturing standards and environmental regulations across global markets.

Q: How does reverse leakage current affect circuit performance?

A: Reverse leakage current represents the small current flowing through the diode in reverse bias. Higher leakage increases standby power consumption and may affect high-impedance circuit performance. The ES3J specifies 10 µA @ 600 V. ER3J_R1_00001 offers superior performance at 1 µA, beneficial for precision analog circuits or battery-powered applications requiring minimal standby current.

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