ES3G R6 Equivalent & Substitute Parts

Part Overview

The ES3G R6 is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 400 V DC reverse voltage and 3 A average rectified current in a DO-214AB (SMC) surface mount package. This component is classified as discontinued at DiGi Electronics, necessitating identification of equivalent and substitute parts for ongoing design support and procurement.

The ES3G R6 operates across a junction temperature range of -55°C to 150°C and features fast recovery characteristics with a reverse recovery time of 35 nanoseconds. The device is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1) and is suitable for standard rectification applications requiring 400 V blocking capability.

Substiute Parts

ES3G R6
Taiwan Semiconductor CorporationIn Stock: 1066ES3G R6 Datasheet
ES3G R6
Current Part
ES3G V7G
Taiwan Semiconductor CorporationIn Stock: 6450ES3G V7G Datasheet
ES3G V7G
Parametric Equivalent
ES3GH
Taiwan Semiconductor CorporationIn Stock: 4111ES3GH Datasheet
ES3GH
Parametric Equivalent
HS3G R7G
Taiwan Semiconductor CorporationIn Stock: 929HS3G R7G Datasheet
HS3G R7G
Parametric Equivalent
HS3G V7G
Taiwan Semiconductor CorporationIn Stock: 1978HS3G V7G Datasheet
HS3G V7G
Parametric Equivalent
RS3G-E3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 7906RS3G-E3/57T Datasheet
RS3G-E3/57T
Parametric Equivalent
RS3G-E3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 4472RS3G-E3/9AT Datasheet
RS3G-E3/9AT
Parametric Equivalent
RS3G-M3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 935RS3G-M3/57T Datasheet
RS3G-M3/57T
Parametric Equivalent
RS3G-M3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 993RS3G-M3/9AT Datasheet
RS3G-M3/9AT
Parametric Equivalent
RS3GC-HF
Comchip TechnologyIn Stock: 938RS3GC-HF Datasheet
RS3GC-HF
Parametric Equivalent
RS3GHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1097RS3GHE3_A/H Datasheet
RS3GHE3_A/H
Parametric Equivalent
RS3GHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 847RS3GHE3_A/I Datasheet
RS3GHE3_A/I
Parametric Equivalent
UF3G_R1_00001
Panjit International Inc.In Stock: 1887UF3G_R1_00001 Datasheet
UF3G_R1_00001
Parametric Equivalent
US3GC-HF
Comchip TechnologyIn Stock: 920US3GC-HF Datasheet
US3GC-HF
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 400 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 3 A V
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 10 µA @ 400 V
Capacitance @ Vr, F 30 pF @ 4V, 1MHz
Package / Case DO-214AB, SMC
Operating Temperature - Junction -55 to 150 °C
Technology Standard
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the ES3G R6 is determined by strict equivalence across the following critical parameters:

Primary Equivalence Criteria:

  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 3 A
  • Package / Case: DO-214AB, SMC
  • Mounting Type: Surface Mount
  • Operating Temperature Range: -55°C to 150°C
  • Technology: Standard
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)

Secondary Compatibility Parameters:

  • Voltage - Forward (Vf) (Max): 1.3 V or lower at rated current
  • Reverse Recovery Time (trr): Specified value (variations noted)
  • Current - Reverse Leakage @ Vr: 10 µA or lower at 400 V
  • Capacitance @ Vr, F: Specified value (variations noted)
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

Substitute parts are grouped into two categories:

Category A - Direct Parametric Equivalents: Parts matching all primary criteria with identical or superior secondary parameters. These include ES3G V7G, ES3GH, RS3G-E3/57T, RS3G-E3/9AT, RS3G-M3/57T, RS3G-M3/9AT, and RS3GC-HF.

Category B - Functional Equivalents with Parameter Variations: Parts meeting all primary criteria but with specified differences in reverse recovery time or capacitance. These include HS3G R7G and HS3G V7G, which exhibit 50 ns reverse recovery time and 80 pF capacitance.

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V] trr [ns] Ir @ Vr [µA] C @ Vr [pF] Package Status
ES3G R6 Taiwan Semiconductor 400 3 1.3 @ 3 A 35 10 @ 400 V 30 @ 4V, 1MHz DO-214AB Discontinued
ES3G V7G Taiwan Semiconductor 400 3 1.3 @ 3 A 35 10 @ 400 V 30 @ 4V, 1MHz DO-214AB Discontinued
ES3GH Taiwan Semiconductor 400 3 1.3 @ 3 A 35 10 @ 400 V 30 @ 4V, 1MHz DO-214AB Active
HS3G R7G Taiwan Semiconductor 400 3 1.3 @ 3 A 50 10 @ 400 V 80 @ 4V, 1MHz DO-214AB Discontinued
HS3G V7G Taiwan Semiconductor 400 3 1.3 @ 3 A 50 10 @ 400 V 80 @ 4V, 1MHz DO-214AB Discontinued
RS3G-E3/57T Vishay General Semiconductor 400 3 1.3 @ 2.5 A 150 10 @ 400 V 44 @ 4V, 1MHz DO-214AB Active
RS3G-E3/9AT Vishay General Semiconductor 400 3 1.3 @ 2.5 A 150 10 @ 400 V 44 @ 4V, 1MHz DO-214AB Active
RS3G-M3/57T Vishay General Semiconductor 400 3 1.3 @ 2.5 A 150 10 @ 400 V 44 @ 4V, 1MHz DO-214AB Active
RS3G-M3/9AT Vishay General Semiconductor 400 3 1.3 @ 2.5 A 150 10 @ 400 V 44 @ 4V, 1MHz DO-214AB Active
RS3GC-HF Comchip Technology 400 3 1.3 @ 3 A 150 5 @ 400 V 40 @ 4V, 1MHz DO-214AB Active
RS3GHE3_A/H Vishay General Semiconductor 400 3 1.3 @ 2.5 A 150 10 @ 400 V 44 @ 4V, 1MHz DO-214AB Active

Engineering Selection Recommendations

For Direct Replacement with Identical Electrical Performance:

ES3GH is the primary recommended substitute. This part maintains all electrical parameters of the ES3G R6 while offering active product status. ES3GH is manufactured by Taiwan Semiconductor Corporation and carries AEC-Q101 automotive qualification, providing enhanced reliability documentation. The part is available in Tape & Reel (TR) packaging with 4009 units in stock.

For Active Product Status with Acceptable Parameter Variations:

RS3GC-HF (Comchip Technology) provides an active alternative with identical forward voltage specification at 3 A rated current. This part exhibits lower reverse leakage current (5 µA versus 10 µA at 400 V), which represents improved performance. The reverse recovery time is specified at 150 ns compared to 35 ns in the original part; this difference is acceptable in standard rectification applications where switching speed is not a critical constraint.

RS3G-E3/9AT and RS3G-E3/57T (Vishay General Semiconductor) are active alternatives with established product status. These parts maintain 400 V and 3 A ratings with identical forward voltage at 2.5 A. The 150 ns reverse recovery time and 44 pF capacitance represent functional equivalence for general-purpose rectification circuits.

RS3GHE3_A/H (Vishay General Semiconductor) offers automotive-grade qualification with AEC-Q101 certification, suitable for applications requiring enhanced reliability documentation.

For Procurement with Packaging Considerations:

ES3G V7G provides parametric equivalence to the original ES3G R6 with Cut Tape (CT) packaging and 6374 units in stock, offering superior availability.

Parts Not Recommended for Direct Substitution:

HS3G R7G and HS3G V7G exhibit increased reverse recovery time (50 ns) and capacitance (80 pF), which may introduce undesired switching characteristics in applications sensitive to these parameters. These parts are suitable only where the application circuit has been verified to tolerate these variations.

Frequently Asked Questions (FAQ)

Q: Can ES3G R6 be directly replaced with ES3GH?

A: Yes. ES3GH maintains all electrical parameters of ES3G R6 while offering active product status. Both parts are rated for 400 V, 3 A, with identical forward voltage (1.3 V @ 3 A), reverse recovery time (35 ns), and reverse leakage current (10 µA @ 400 V). The primary difference is packaging format (Tape & Reel versus unspecified) and product status (Active versus Discontinued).

Q: What is the significance of reverse recovery time differences between substitute parts?

A: Reverse recovery time (trr) determines the speed at which the diode transitions from forward conduction to reverse blocking. The ES3G R6 specifies 35 ns. Substitute parts from Vishay (RS3G series) and Comchip (RS3GC-HF) specify 150 ns. In standard rectification applications operating at line frequency (50/60 Hz), this difference is not functionally significant. In high-frequency switching applications, the longer recovery time may introduce additional switching losses. Application circuit verification is required for high-frequency operation.

Q: Are packaging format differences between Cut Tape (CT) and Tape & Reel (TR) significant for component selection?

A: Packaging format affects procurement and assembly processes but not electrical performance. Cut Tape (CT) packaging is suitable for manual assembly or small-volume production. Tape & Reel (TR) packaging is optimized for automated pick-and-place assembly. Both formats contain identical die and electrical characteristics. Selection depends on production volume and assembly equipment capability.

Q: What does AEC-Q101 qualification indicate?

A: AEC-Q101 is an automotive industry standard qualification for discrete semiconductors. Parts carrying this qualification (ES3GH, RS3GHE3_A/H) have undergone enhanced reliability testing and documentation suitable for automotive applications. This qualification is not required for general industrial applications but provides additional assurance of manufacturing consistency and reliability.

Q: Can RS3GC-HF be used as a substitute despite lower reverse leakage current (5 µA versus 10 µA)?

A: Yes. Lower reverse leakage current represents improved performance and does not create compatibility issues. The RS3GC-HF specification of 5 µA at 400 V is superior to the ES3G R6 specification of 10 µA. This part is suitable for direct substitution in all applications where the original part was specified.

Q: Why do some substitute parts specify forward voltage at 2.5 A instead of 3 A?

A: Forward voltage specifications are provided at specific test currents. RS3G series parts from Vishay specify Vf at 2.5 A, while the ES3G R6 specifies Vf at 3 A. Both specifications indicate 1.3 V maximum, confirming functional equivalence. The difference reflects manufacturer test methodology rather than actual performance variation at rated current.

Q: Is the ES3G V7G suitable for new designs or only for replacement of discontinued ES3G R6?

A: ES3G V7G is also discontinued at DiGi Electronics and should not be selected for new designs. For new designs, select from active products: ES3GH, RS3G-E3/9AT, RS3G-E3/57T, RS3G-M3/57T, RS3G-M3/9AT, RS3GC-HF, or RS3GHE3_A/H.

Q: What is the difference between ES3G and HS3G base product numbers?

A: ES3G and HS3G represent different product lines from Taiwan Semiconductor Corporation with different electrical characteristics. HS3G parts exhibit 50 ns reverse recovery time and 80 pF capacitance compared to ES3G specifications of 35 ns and 30 pF. Both meet the 400 V, 3 A primary requirements but differ in switching characteristics. Selection depends on application circuit requirements for recovery time and capacitance.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed carry RoHS3 compliance certification. All parts also carry MSL 1 (Unlimited) moisture sensitivity level, indicating no special moisture control requirements during storage or handling.

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