ES3DV R7G Equivalent & Substitute Parts

Part Overview

The ES3DV R7G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 200 V DC reverse voltage and 3 A average rectified current in a DO-214AB (SMC) surface mount package. This component is classified as discontinued at DiGi Electronics, necessitating identification of equivalent and substitute parts for ongoing design requirements and production continuity. The part features fast recovery characteristics with a 20 ns reverse recovery time and operates across a junction temperature range of -55°C to 150°C.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	3	A
Voltage - Forward (Vf) (Max) @ If	900 mV @ 3 A	mV
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	20	ns
Current - Reverse Leakage @ Vr	10 µA @ 200 V	µA
Capacitance @ Vr, F	45 pF @ 4V, 1MHz	pF
Package / Case	DO-214AB, SMC	—
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the ES3DV R7G are classified into two categories based on electrical and mechanical compatibility:

Parametric Equivalents maintain identical electrical specifications across all critical parameters: 200 V reverse voltage, 3 A average rectified current, 900 mV forward voltage drop at 3 A, fast recovery speed classification (≤ 500ns), 20 ns reverse recovery time, and DO-214AB (SMC) package. These parts are direct functional replacements with no circuit redesign required.

Similar Parts share the same reverse voltage (200 V), average rectified current (3 A), fast recovery speed classification, and DO-214AB (SMC) package, but exhibit variations in one or more of the following parameters: forward voltage drop, reverse recovery time, reverse leakage current, capacitance, or operating temperature range. These parts are suitable for applications where the specified parameter variations fall within system design tolerances.

The key parameters determining substitution eligibility are:

Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3 A
Package / Case: DO-214AB, SMC
Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [mV]	Speed	trr [ns]	Ir @ Vr [µA]	Package	Tj (°C)	Product Status
ES3DV R7G	Taiwan Semiconductor Corporation	200	3	900 @ 3A	Fast Recovery ≤ 500ns	20	10 @ 200V	DO-214AB (SMC)	-55 to 150	Discontinued
ES3DVH	Taiwan Semiconductor Corporation	200	3	900 @ 3A	Fast Recovery ≤ 500ns	20	10 @ 200V	DO-214AB (SMC)	-55 to 150	Active
ER3D-TP	Micro Commercial Co	200	3	950 @ 3A	Fast Recovery ≤ 500ns	35	5 @ 200V	DO-214AB (SMC)	-50 to 175	Active
ES3D	Diotec Semiconductor	200	3	900 @ 3A	Fast Recovery ≤ 500ns	20	5 @ 200V	DO-214AB (SMC)	-50 to 150	Active
MURS320-13-F	Diodes Incorporated	200	3	875 @ 3A	Fast Recovery ≤ 500ns	25	5 @ 200V	DO-214AB (SMC)	-65 to 175	Active
MURS320-E3/57T	Vishay General Semiconductor - Diodes Division	200	3	875 @ 3A	Fast Recovery ≤ 500ns	35	5 @ 200V	DO-214AB (SMC)	-65 to 175	Active
MURS320-E3/9AT	Vishay General Semiconductor - Diodes Division	200	3	875 @ 3A	Fast Recovery ≤ 500ns	35	5 @ 200V	DO-214AB (SMC)	-65 to 175	Active
MURS320-M3/57T	Vishay General Semiconductor - Diodes Division	200	3	875 @ 3A	Fast Recovery ≤ 500ns	35	5 @ 200V	DO-214AB (SMC)	-65 to 175	Active
MURS320-M3/9AT	Vishay General Semiconductor - Diodes Division	200	3	875 @ 3A	Fast Recovery ≤ 500ns	35	5 @ 200V	DO-214AB (SMC)	-65 to 175	Active

Engineering Selection Recommendations

Primary Equivalent: ES3DVH (Taiwan Semiconductor Corporation) is the direct parametric equivalent to ES3DV R7G. This part maintains identical electrical specifications including 200 V reverse voltage, 3 A average rectified current, 900 mV forward voltage drop, 20 ns reverse recovery time, and -55°C to 150°C operating temperature range. ES3DVH is currently active in production with AEC-Q101 automotive qualification and ROHS3 compliance. This part is recommended as the first choice for direct replacement.

Secondary Equivalents: ES3D (Diotec Semiconductor) and MURS320-13-F (Diodes Incorporated) are functionally equivalent alternatives. ES3D matches the ES3DV R7G across all critical electrical parameters with identical forward voltage and reverse recovery time. MURS320-13-F provides a lower forward voltage drop (875 mV versus 900 mV) and extended operating temperature range (-65°C to 175°C), with ROHS3 compliance and active production status.

Alternative Selections: ER3D-TP (Micro Commercial Co), MURS320-E3/57T, MURS320-E3/9AT, MURS320-M3/57T, and MURS320-M3/9AT are suitable alternatives where forward voltage drop variations of 25-50 mV and reverse recovery time variations of 15 ns are acceptable within circuit design margins. All alternatives maintain 200 V reverse voltage, 3 A current rating, DO-214AB (SMC) package, and fast recovery speed classification. All listed substitute parts are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity rating.

Frequently Asked Questions (FAQ)

Q: Can ES3DVH be used as a direct replacement for ES3DV R7G?

A: Yes. ES3DVH is a parametric equivalent with identical electrical specifications: 200 V reverse voltage, 3 A average rectified current, 900 mV forward voltage drop at 3 A, 20 ns reverse recovery time, and -55°C to 150°C operating temperature range. Both parts use the DO-214AB (SMC) package. No circuit modifications are required.

Q: What is the difference between ES3DVH and MURS320-13-F?

A: Both parts share the same 200 V reverse voltage, 3 A current rating, and DO-214AB (SMC) package. MURS320-13-F has a lower forward voltage drop (875 mV versus 900 mV) and a wider operating temperature range (-65°C to 175°C versus -55°C to 150°C). The reverse recovery time differs by 5 ns (25 ns versus 20 ns). These differences are acceptable in most applications where the specified parameter variations fall within design tolerances.

Q: Are all substitute parts available in the same package?

A: All substitute parts listed in this reference are available in the DO-214AB (SMC) surface mount package, matching the ES3DV R7G package specification. Packaging format variations (Cut Tape, Tape & Reel, Digi-Reel) do not affect electrical compatibility or PCB mounting.

Q: What is the significance of reverse recovery time (trr) differences?

A: Reverse recovery time affects switching speed and electromagnetic interference characteristics. The ES3DV R7G specifies 20 ns. Substitute parts with 25 ns or 35 ns reverse recovery times exhibit slightly slower switching behavior. For applications sensitive to switching transients or operating at high frequencies, verify that the specified reverse recovery time variation remains within system design margins.

Q: Do all substitute parts meet RoHS compliance requirements?

A: Yes. All substitute parts listed in this reference carry ROHS3 compliance certification, matching the ES3DV R7G compliance status. All parts also carry MSL 1 (Unlimited) moisture sensitivity level rating.

Q: What is the difference between fast recovery and standard recovery speed classifications?

A: The ES3DV R7G is classified as fast recovery with reverse recovery time ≤ 500 ns at currents > 200 mA. All substitute parts in this reference maintain the same fast recovery speed classification. The CGRC503-G, listed in the substitute database, is classified as standard recovery (> 500 ns) and is not recommended as a direct substitute due to this speed classification difference.

Q: Can ER3D-TP be used in applications requiring the -55°C lower temperature limit?

A: ER3D-TP specifies an operating temperature range of -50°C to 175°C, which does not extend to -55°C. For applications requiring operation at -55°C, use ES3DVH, ES3D, or MURS320 variants, which all support the -55°C lower temperature limit or lower.

Q: What is the impact of forward voltage drop variation on circuit design?

A: Forward voltage drop affects power dissipation and voltage regulation. The ES3DV R7G specifies 900 mV at 3 A. Substitute parts range from 875 mV to 950 mV at 3 A. A 25 mV reduction (MURS320 variants) decreases power dissipation; a 50 mV increase (ER3D-TP) increases dissipation. Verify that the specified variation remains within thermal design and voltage regulation margins for your application.

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