ES3DVHM6G Equivalent & Substitute Parts

Part Overview

The ES3DVHM6G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 200 V DC reverse voltage and 3 A average rectified current in a DO-214AB (SMC) surface mount package. This part is discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives that maintain electrical and mechanical compatibility for new designs and production continuity.

Substiute Parts

ES3DVHM6G
Taiwan Semiconductor CorporationIn Stock: 1020ES3DVHM6G Datasheet
ES3DVHM6G
Current Part
ES3DVH
Taiwan Semiconductor CorporationIn Stock: 3744ES3DVH Datasheet
ES3DVH
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CGRC503-G
Comchip TechnologyIn Stock: 793CGRC503-G Datasheet
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ER3D-TP
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ES3D
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ES3DB-13-F
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ES3DB-13-F
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MURS320-13-F
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RS3D-13-F
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RS3D-13-F
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S3D-13-F
Diodes IncorporatedIn Stock: 295114S3D-13-F Datasheet
S3D-13-F
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S3D-TP
Micro Commercial CoIn Stock: 24448S3D-TP Datasheet
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S3DB-13-F
Diodes IncorporatedIn Stock: 70205S3DB-13-F Datasheet
S3DB-13-F
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S5DC-13-F
Diodes IncorporatedIn Stock: 7999S5DC-13-F Datasheet
S5DC-13-F
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S5DL-TP
Micro Commercial CoIn Stock: 3957S5DL-TP Datasheet
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SMLJ60S2-TP
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SMLJ60S2-TP
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STTH4R02SY
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U3D-E3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 12367U3D-E3/57T Datasheet
U3D-E3/57T
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U3D-E3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 2918U3D-E3/9AT Datasheet
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ACEFC304-HF
Comchip TechnologyIn Stock: 4054ACEFC304-HF Datasheet
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ES3D-13-F
Diodes IncorporatedIn Stock: 45290ES3D-13-F Datasheet
ES3D-13-F
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ES3D-E3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 79466ES3D-E3/57T Datasheet
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ES3D-E3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 110462ES3D-E3/9AT Datasheet
ES3D-E3/9AT
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ES3D-M3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 2033ES3D-M3/57T Datasheet
ES3D-M3/57T
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ES3D-M3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 842ES3D-M3/9AT Datasheet
ES3D-M3/9AT
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ES3DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1775ES3DHE3_A/H Datasheet
ES3DHE3_A/H
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ES3DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 55193ES3DHE3_A/I Datasheet
ES3DHE3_A/I
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ES3DHE3J_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 1094ES3DHE3J_A/I Datasheet
ES3DHE3J_A/I
Parametric Equivalent
ES3DHM3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 970ES3DHM3_A/H Datasheet
ES3DHM3_A/H
Parametric Equivalent
ES3DHM3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 927ES3DHM3_A/I Datasheet
ES3DHM3_A/I
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 900 mV @ 3 A mV
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 20 ns
Current - Reverse Leakage @ Vr 10 µA @ 200 V
Package / Case DO-214AB, SMC
Operating Temperature - Junction -55 to 150 °C
Grade Automotive
Qualification AEC-Q101
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the ES3DVHM6G is determined by the following critical parameters:

Mandatory Matching Criteria:

  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3 A
  • Package / Case: DO-214AB (SMC) surface mount
  • Mounting Type: Surface Mount
  • RoHS Compliance: ROHS3 Compliant

Performance Parameters (Allowable Variation):

  • Voltage - Forward (Vf) (Max) @ If: 900 mV nominal (range 875–1300 mV acceptable within design margins)
  • Reverse Recovery Time (trr): 20 ns nominal (range 20–150 ns acceptable for general-purpose applications)
  • Current - Reverse Leakage @ Vr: 10 µA nominal (range 5–10 µA acceptable)
  • Speed Classification: Fast Recovery or Standard Recovery both acceptable

Compliance Parameters:

  • RoHS3 Compliance required
  • Automotive Grade and AEC-Q101 qualification preferred but not mandatory for all applications

Substitute parts are grouped into two categories: Direct Equivalents (identical electrical and mechanical specifications) and Functional Equivalents (matching core parameters with acceptable performance variations).

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [mV] trr [ns] Speed Package Status
ES3DVHM6G Taiwan Semiconductor 200 3 900 @ 3A 20 Fast Recovery ≤ 500ns DO-214AB (SMC) Discontinued
ES3DVH Taiwan Semiconductor 200 3 900 @ 3A 20 Fast Recovery ≤ 500ns DO-214AB (SMC) Active
ER3D-TP Micro Commercial Co 200 3 950 @ 3A 35 Fast Recovery ≤ 500ns DO-214AB (SMC) Active
ES3D Diotec Semiconductor 200 3 900 @ 3A 20 Fast Recovery ≤ 500ns DO-214AB (SMC) Active
MURS320-13-F Diodes Incorporated 200 3 875 @ 3A 25 Fast Recovery ≤ 500ns DO-214AB (SMC) Active
RS3D-13-F Diodes Incorporated 200 3 1300 @ 3A 150 Fast Recovery ≤ 500ns DO-214AB (SMC) Active
S3D-13-F Diodes Incorporated 200 3 1150 @ 3A Standard Recovery > 500ns DO-214AB (SMC) Active
S3D-TP Micro Commercial Co 200 3 1200 @ 3A Standard Recovery > 500ns DO-214AB (SMC) Not For New Designs
ES3DB-13-F Diodes Incorporated 200 3 900 @ 3A 25 Fast Recovery ≤ 500ns DO-214AA (SMB) Active
S3DB-13-F Diodes Incorporated 200 3 1150 @ 3A Standard Recovery > 500ns DO-214AA (SMB) Active
CGRC503-G Comchip Technology 200 5 1150 @ 5A Standard Recovery > 500ns DO-214AB (SMC) Active

Engineering Selection Recommendations

Tier 1 - Direct Replacement (Identical Specifications):

ES3DVH (Taiwan Semiconductor Corporation) is the direct equivalent to ES3DVHM6G. This part maintains identical electrical ratings (200 V, 3 A, 900 mV forward voltage, 20 ns recovery time) and package configuration (DO-214AB SMC). The primary difference is packaging format: ES3DVH is supplied in Tape & Reel (TR) configuration with 3702 units in stock, compared to the discontinued ES3DVHM6G. Both parts carry AEC-Q101 automotive qualification and ROHS3 compliance.

Tier 2 - Functional Equivalents (Fast Recovery, DO-214AB SMC Package):

The following parts maintain the 200 V / 3 A electrical ratings and DO-214AB SMC package with fast recovery characteristics (≤ 500ns):

  • ER3D-TP (Micro Commercial Co): Matches core specifications with 950 mV forward voltage and 35 ns recovery time. Active product status with 16,840 units in stock.
  • ES3D (Diotec Semiconductor): Identical to ES3DVHM6G specifications (200 V, 3 A, 900 mV, 20 ns recovery). Active status with 131,200 units in stock. Supplied in Cut Tape (CT) & Digi-Reel® packaging.
  • MURS320-13-F (Diodes Incorporated): Meets all core parameters with 875 mV forward voltage and 25 ns recovery time. Active status with 7,630 units in stock. Extended operating temperature range (-65°C to 175°C).

Tier 3 - Functional Equivalents (Standard Recovery, DO-214AB SMC Package):

These parts maintain 200 V / 3 A ratings and DO-214AB SMC package but feature standard recovery characteristics (> 500ns):

  • S3D-13-F (Diodes Incorporated): 1150 mV forward voltage. Active status with 295,099 units in stock. Highest inventory availability.
  • S3D-TP (Micro Commercial Co): 1200 mV forward voltage. Status: Not For New Designs. 24,368 units in stock.
  • RS3D-13-F (Diodes Incorporated): 1300 mV forward voltage with 150 ns recovery time. Active status with 5,250 units in stock.

Tier 4 - Package Variant (SMB Package, DO-214AA):

These parts maintain 200 V / 3 A electrical ratings but use SMB package (DO-214AA) instead of SMC (DO-214AB):

  • ES3DB-13-F (Diodes Incorporated): Fast recovery (25 ns), 900 mV forward voltage. Active status with 32,100 units in stock. Requires PCB layout modification for SMB footprint.
  • S3DB-13-F (Diodes Incorporated): Standard recovery, 1150 mV forward voltage. Active status with 70,100 units in stock.

Not Recommended:

  • CGRC503-G (Comchip Technology): Rated for 5 A current, exceeding the 3 A specification. Not a direct substitute.

Selection Criteria by Application:

For applications requiring identical performance characteristics and automotive qualification, select ES3DVH or ES3D. For applications where forward voltage drop is critical, MURS320-13-F offers the lowest Vf (875 mV). For applications with extended temperature requirements, MURS320-13-F supports -65°C to 175°C operation. For cost-optimized designs where recovery speed is not critical, S3D-13-F provides maximum inventory availability.

Frequently Asked Questions (FAQ)

Q: Can ES3DVH directly replace ES3DVHM6G without circuit modification?

A: Yes. ES3DVH is electrically and mechanically identical to ES3DVHM6G. Both are rated 200 V / 3 A with 900 mV forward voltage and 20 ns recovery time in DO-214AB SMC package. The only difference is packaging format (Tape & Reel vs. original packaging). No circuit or PCB layout changes are required.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Recovery speed refers to reverse recovery time (trr), the time required for a diode to stop conducting when reverse bias is applied. Fast recovery diodes (≤ 500ns) minimize switching losses and are preferred in high-frequency switching applications. Standard recovery diodes (> 500ns) are suitable for lower-frequency rectification. The ES3DVHM6G specifies fast recovery (20 ns). Substitutes with standard recovery (S3D-13-F, S3D-TP) are acceptable for general-purpose rectification but may increase switching losses in high-frequency circuits.

Q: Why are some substitute parts rated for 5 A instead of 3 A?

A: CGRC503-G is rated for 5 A average rectified current, exceeding the 3 A specification of ES3DVHM6G. This part is not a direct substitute because it represents a different device class. Using a higher-rated device does not provide functional equivalence; it introduces unnecessary cost and board space considerations. Select only parts rated for 3 A to maintain design intent.

Q: Can I use SMB package parts (ES3DB-13-F, S3DB-13-F) as substitutes?

A: SMB package parts (DO-214AA) are mechanically incompatible with SMC package footprints (DO-214AB). While electrical specifications may match, PCB layout and component placement must be modified. SMB substitution requires design review and PCB rework. Use SMB variants only if SMC alternatives are unavailable and design modification is acceptable.

Q: What does AEC-Q101 qualification mean?

A: AEC-Q101 is an automotive industry standard qualification for discrete semiconductors. It certifies that the component meets reliability, performance, and environmental stress testing requirements for automotive applications. ES3DVHM6G carries AEC-Q101 qualification. Not all substitute parts carry this certification; verify automotive qualification requirements for your application before substitution.

Q: Is ROHS3 compliance mandatory for all substitutes?

A: All listed substitute parts are ROHS3 compliant, matching the ES3DVHM6G specification. ROHS3 compliance is a standard requirement for components sold in regulated markets. Verify compliance status in component datasheets for any parts not listed in this reference.

Q: What is the significance of forward voltage (Vf) variation among substitutes?

A: Forward voltage ranges from 875 mV (MURS320-13-F) to 1300 mV (RS3D-13-F) across substitutes, compared to 900 mV for ES3DVHM6G. In rectifier circuits, higher Vf increases power dissipation and reduces efficiency. For precision applications or high-current designs, select substitutes with Vf closest to 900 mV (ES3DVH, ES3D, ES3DB-13-F). For general-purpose applications, Vf variation within ±200 mV is typically acceptable.

Q: Which substitute offers the best inventory availability?

A: S3D-13-F (Diodes Incorporated) offers the highest inventory with 295,099 units in stock. ES3D (Diotec Semiconductor) provides 131,200 units. Both are active products with immediate availability. ES3DVH (Taiwan Semiconductor) offers 3,702 units as the direct equivalent.

Q: Can I substitute based on package availability alone?

A: No. Package compatibility is necessary but not sufficient for substitution. Electrical parameters (voltage, current, forward voltage, recovery time) must match or fall within acceptable design margins. Always verify complete electrical specifications before substitution, not package type alone.

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